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Polyimide thin dielectric film, preparation method and application thereof

A technology of polyimide film and polyimide electricity, which is applied in the field of high-temperature-resistant polyimide dielectric film and its preparation for film capacitors, can solve the problem of low g and achieve high dielectric constant and low dielectric Loss, highlight the effect of heat resistance

Active Publication Date: 2018-11-20
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The highest dielectric constant can reach 7.8, and the energy density can reach 15J / cm 3 , but their T g Very low, it is difficult to use for a long time at 150 ℃ (Rui Ma, Aaron F. Baldwin, Chenchen Wang, Ido Offenbach, Mukerrem Cakmak, Rampi Ramprasad, and Gregory Allen Sotzing. Rationally Designed Polyimides for High Energy Density Capacitor Applications. ACS AppliedMaterials and Interfaces, 2014,6(13):10445-10451)

Method used

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  • Polyimide thin dielectric film, preparation method and application thereof
  • Polyimide thin dielectric film, preparation method and application thereof
  • Polyimide thin dielectric film, preparation method and application thereof

Examples

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Embodiment 1

[0044] Embodiment 1, the preparation of polyimide dielectric film

[0045] At room temperature and normal pressure, in a three-neck round-bottomed flask equipped with mechanical stirring and a nitrogen inlet and outlet, add 1.9623 grams of 0.0098 moles of 4,4'-diaminodiphenyl ether and 40.1 grams of N-methylpyrrolidone (NMP), Stir under nitrogen protection until completely dissolved, add 2.4922 grams of 0.01 mole 3,3',4,4'-biphenyltetraacid dianhydride to obtain a homogeneous solution with a solid content of 10wt.%, and continue to react for 6 hours to obtain Polyamic acid solution.

[0046] After the above polyamic acid solution is filtered and vacuum degassed, it is coated on a glass plate with a smooth surface. The temperature is raised in the step of ℃, an imidization reaction occurs, and a polyimide film is obtained. Place the glass plate in deionized water to peel off the film automatically, and dry it in vacuum to obtain a polyimide dielectric film with a thickness of...

Embodiment 2

[0049] Embodiment 2, the preparation of polyimide dielectric film

[0050] At room temperature and normal pressure, in a three-necked round-bottomed flask equipped with mechanical stirring and a nitrogen inlet and outlet, add 1.9826 grams of 0.01 mole 4,4'-diaminodiphenylmethane and 28.8 grams of dimethyl sulfoxide (DMSO), Stir under nitrogen protection until completely dissolved, then add 3.1020 grams of 0.01 mole 3,3',4,4'-diphenyl ether tetraacid dianhydride to obtain a homogeneous solution with a solid content of 15wt.%, and continue the reaction for 8 hours to obtain a polyamic acid solution.

[0051] After the above polyamic acid solution is filtered and vacuum defoamed, it is coated on a silicon wafer with a smooth surface. °C, 250 °C for 1 hour, and 300 °C for 0.5 hour, and the imidization reaction occurred to obtain a polyimide film. The silicon wafer was placed in deionized water to peel off the film automatically, and dried in vacuum to obtain a polyimide dielectr...

Embodiment 3

[0053] Embodiment 3, preparation and characterization of polyimide dielectric film

[0054] At room temperature and normal pressure, in a three-necked round-bottomed flask equipped with mechanical stirring and a nitrogen inlet and outlet, add 3.5571 grams of 0.0095 moles of 1,4-bis(4-aminobenzoic acid) hydroquinone ester and dimethyl sulfoxide ( DMSO) and N,N-dimethylformamide (DMF) mixed solvent 20.3 grams, volume ratio DMSO:DMF=1:1, stirred under nitrogen protection until completely dissolved, added 3.2223 grams of 0.01 mole of 3,3', 4,4'-benzophenonetetraacid dianhydride to obtain a homogeneous solution with a solid content of 25 wt.%, and continue to react for 6 hours to obtain a polyamic acid solution.

[0055] After the above polyamic acid solution is filtered and vacuum degassed, it is coated on a glass plate with a smooth surface. The temperature is raised in the step of ℃, an imidization reaction occurs, and a polyimide film is obtained. Place the glass plate in dei...

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Abstract

The invention discloses a polyimide thin dielectric film. The film is formed by performing condensation polymerization and subsequent thermal imidization on diamine monomer containing polar groups and / or a flexible key joint structure and dianhydride monomer containing polar groups and / or a flexible key joint structure. The method comprises the following steps: dissolving the diamine monomer intoan organic solvent under the protection of inert gas, then adding the dianhydride monomer, and stirring, so as to obtain a homogeneous solution, and continuously performing reaction for 4 to 10 hoursat certain temperature, so as to obtain a polyamide acid (PAA) solution; coating the polyamide acid solution onto a substrate, performing heating and drying treatment, then soaking the substrate intoa deionized water, so as to perform peeling, and then performing drying treatment again, so as to obtain the polyimide thin dielectric film. The polyimide thin dielectric film can tolerate 230 DEG C temperature. The polyimide thin dielectric film is applied to metallic film capacitors.

Description

technical field [0001] The invention relates to the technical field of film capacitors, in particular to a high-temperature-resistant polyimide dielectric film for film capacitors and its preparation method and application. Background technique [0002] Polymer film capacitors are widely used in microelectronic devices and power systems, including power electronics in electric vehicles and hybrid electric vehicles, grid inverters / converters, pulse power supply equipment, etc. Taking electric vehicles or hybrid vehicles as an example, due to the demand for fast charging and discharging of large amounts of energy in the next generation of power electronics, energy storage and power regulation are becoming more and more necessary, requiring polymer dielectric films with high breakdown strength, high dielectric constant and low dielectric loss properties. The performance of the polypropylene dielectric in the existing film capacitors can no longer meet the temperature requireme...

Claims

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Application Information

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IPC IPC(8): C08G73/10C08J5/18C08L79/08
CPCC08G73/1007C08G73/1064C08G73/1067C08G73/1071C08J5/18C08J2379/08
Inventor 佟辉徐菊
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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