The invention relates to the field of glass, and particularly discloses a substrate and TGV through hole glass suitable for the field of
semiconductor packaging and a preparation method of the TGV through hole glass. The glass is prepared from the following components: 52 to 73 percent of S < iO >, Al < 2 > O < 3 >, B < 2 > O < 3 >, MgO, Sr < O >, CaO, BaO, ZrO2 and Fe < 2 > O < 3 >. According to the glass, a
glass matrix obtained through a
float glass forming process is subjected to annealing and chemical strengthening, high-
alumina-
silica matrix glass is obtained, and then surface
plasma treatment and modified
silicon carbide fiber treatment are performed, so that the
adhesive high-
alumina-
silica glass is obtained. The glass has excellent
dielectric constant and expansion coefficient, keeps extremely strong
light transmission on the premise of strong interface adhesion, can be used as a substrate for packaging a large-size
wafer / panel, can be further plated with
copper in a glass
through hole technology, can improve the stability of a
metal copper plating layer, and has a wide application prospect.