Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Polyimide dielectric material and dielectric film

A polyimide electrical and dielectric material technology, applied in the field of polyimide dielectric materials and dielectric films, can solve the problems of complex and expensive synthesis of new monomers, and achieve the effects of reducing dielectric loss and improving dielectric properties

Inactive Publication Date: 2021-03-30
阜阳申邦新材料技术有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the dielectric constant of polyimide can be improved to some extent by changing its chemical structure, the synthesis of new monomers is very complicated and expensive.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polyimide dielectric material and dielectric film
  • Polyimide dielectric material and dielectric film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] A kind of dielectric thin film, its preparation method comprises the steps:

[0021] S1. Under nitrogen atmosphere, add 2mmol 3,5-diaminobenzoic acid and 8mmol 4,4'-diaminodiphenyl ether into 50ml of N,N-dimethylacetamide solvent, stir until completely dissolved , then add 10mmol 3,3',4,4'-diphenyl ether tetracarboxylic dianhydride, continue to stir until it is completely dissolved, and after stirring at room temperature for 4 hours, a polyamic acid solution is obtained; add 8ml of pyridine to the polyamic acid solution As an imidization agent, add 1.2ml of acetic anhydride as a dehydrating agent after the dispersion is complete, and after stirring and reacting for 6 hours, a polyimide solution is obtained;

[0022] S2. After mixing 0.5g carbon nanotubes and 5mL concentrated nitric acid, ultrasonically mix, heat and reflux for 6h, after the end, filter, wash with water until neutral, and dry to obtain oxidized carbon nanotubes; the above-mentioned oxidized carbon nanotu...

Embodiment 2

[0025] A kind of dielectric thin film, its preparation method comprises the steps:

[0026] S1. Under nitrogen atmosphere, add 2mmol 3,5-diaminobenzoic acid and 8mmol 4,4'-diaminodiphenyl ether into 50ml of N,N-dimethylacetamide solvent, stir until completely dissolved , then add 10mmol 3,3',4,4'-biphenyltetracarboxylic dianhydride, continue to stir until completely dissolved, and stir at room temperature for 4 hours to obtain a polyamic acid solution; add 8ml of pyridine to the polyamic acid solution as Imidation agent, after the dispersion is complete, add 1.2ml acetic anhydride as a dehydrating agent, and stir and react for 6 hours to obtain a polyimide solution;

[0027] S2. After mixing 0.5g carbon nanotubes and 5mL concentrated nitric acid, ultrasonically mix, heat and reflux for 6h, after the end, filter, wash with water until neutral, and dry to obtain oxidized carbon nanotubes; the above-mentioned oxidized carbon nanotubes and 10g Mix thionyl chloride, ultrasonically...

Embodiment 3

[0030] A kind of dielectric thin film, its preparation method comprises the steps:

[0031] S1. Under nitrogen atmosphere, add 2mmol 3,5-diaminobenzoic acid and 8mmol 4,4'-diaminodiphenyl ether into 50ml of N,N-dimethylacetamide solvent, stir until completely dissolved , then add 10mmol of bisphenol A diether dianhydride, continue to stir until it is completely dissolved, and react with stirring at room temperature for 4 hours to obtain a polyamic acid solution; add 8ml of pyridine to the polyamic acid solution as an imidization agent, and the dispersion is complete Then add 1.2ml of acetic anhydride as a dehydrating agent, and stir for 6 hours to obtain a polyimide solution;

[0032] S2. After mixing 0.5g carbon nanotubes and 5mL concentrated nitric acid, ultrasonically mix, heat and reflux for 6h, after the end, filter, wash with water until neutral, and dry to obtain oxidized carbon nanotubes; the above-mentioned oxidized carbon nanotubes and 10g Mix thionyl chloride, ultr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
relative permittivityaaaaaaaaaa
Login to View More

Abstract

The invention provides a polyimide dielectric material and a dielectric film. The dielectric material is obtained by an esterification reaction of carboxyl-containing polyimide and hydroxylated carbonnanotubes. According to the invention, the polyimide and the carbon nanotubes are compounded, so that the dielectric property of the polyimide is effectively improved.

Description

technical field [0001] The invention relates to the technical field of film capacitors, in particular to a polyimide dielectric material and a dielectric film. Background technique [0002] Due to its good performance of storing electric energy and uniform electric field, high dielectric materials are widely used in industries such as electronics, motors, and electric energy transmission. With the rapid development of science and technology, all walks of life have higher and higher requirements for materials. Polymer materials with high dielectric constant, low dielectric loss and light weight have become a hot spot in the field of electric energy storage and uniform electric field technology. [0003] Among the known organic thin films, the dielectric constant of most materials is usually as low as 2-6. The lower dielectric constant makes polymer materials usually used as insulating media. Polyimide is a kind of polymer material with high strength, high temperature resista...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C08L79/08C08K9/04C08K9/02C08K3/04C08J5/18
CPCC08J5/18C08J2379/08C08K9/02C08K9/04C08K2201/011C08K3/041
Inventor 徐娟
Owner 阜阳申邦新材料技术有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com