Preparation method of trenches of polyimide-embedded syconoid ridge type devices
A technology of polyimide and its production method, which is applied in the field of lithography process for manufacturing semiconductor devices, and can solve problems such as difficult lithography process
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[0027] Taking a double-groove ridge laser with a wavelength of 1.5um as an example, after implementing the manufacturing method of the polyimide-filled double-groove ridge device channel of the present invention, the operation is as follows:
[0028] Step 1: growing an active layer 20 and a confinement layer 30 on the surface of the substrate 10;
[0029] Step 2: making a photolithography pattern on the surface of the confinement layer 30;
[0030] Step 3: photolithography, etching a double-groove-ridge structure on the surface of the confinement layer 30, and the etching depth reaches the surface of the active layer 20;
[0031] Step 4: Coat the polyimide dielectric layer 40 in the double-groove ridge structure and the surface of the limiting layer 30 for pre-curing; the pre-curing time is 20-40 minutes, using a desktop electric drying oven, and the curing temperature is 110- 120°C;
[0032] Step 5: Apply photoresist 50 on the surface of polyimide dielectric layer 40, and d...
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