Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Three-dimensional micro-heater comprising circular arc-shaped heating film region with adjustable radian and method

A technology of heating film area and heater, applied in the field of three-dimensional micro heater

Inactive Publication Date: 2010-12-15
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF5 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention intends to provide a combination of isotropic dry etching of silicon and anisotropic dry etching of silicon, or a combination of isotropic dry etching of silicon and anisotropic wet etching of silicon to form a The three-dimensional micro-heater in the arc-shaped heating film area is tuned, and the peeling process based on glue spray lithography solves the problem of making heating resistance wires inside the groove

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-dimensional micro-heater comprising circular arc-shaped heating film region with adjustable radian and method
  • Three-dimensional micro-heater comprising circular arc-shaped heating film region with adjustable radian and method
  • Three-dimensional micro-heater comprising circular arc-shaped heating film region with adjustable radian and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] The structure diagram of this embodiment can be found in Figure 5 As shown, the specific production method is as follows:

[0045] 1. Selection of silicon substrate: choose a 4-inch silicon wafer with an N-type (110) surface as the substrate, with a resistivity of 1-10Ω·cm, and a silicon wafer thickness of 450±10 microns.

[0046] 2. Making stepped grooves: use silicon oxide as a mask, and form grooves with a series of steps through multiple times of silicon anisotropic dry etching. Silicon anisotropic dry etching can use DRIE (DeepReactive Ion Etching).

[0047] 3. Make a groove with a circular arc-shaped cross section: under the protection of silicon oxide, use the method of silicon isotropic dry etching to etch the stepped groove formed in step 2. At this time, the gas will Perform chamfer etching. The final groove depth is about 50 microns.

[0048] 4. Multiple oxidations to make the interior of the arc-shaped groove smoother: oxidize the silicon wafer after dr...

Embodiment 2

[0054] The structure diagram of this embodiment can be found in Figure 7 As shown, the specific production method is as follows:

[0055] 1. Selection of silicon substrate: select a 4-inch silicon wafer with a P-type (111) plane as the substrate, with a resistivity of 1-10Ω·cm, and a silicon wafer thickness of 450±10 microns.

[0056] 2. Making stepped grooves: use silicon oxide as a mask, and form grooves with a series of steps through multiple times of silicon anisotropic dry etching. Silicon anisotropic dry etching can use DRIE (DeepReactive Ion Etching).

[0057] 3. Make a groove with a circular arc-shaped cross section: under the protection of silicon oxide, use the method of silicon isotropic dry etching to etch the stepped groove formed in step 2. At this time, the gas will Perform chamfer etching. The final groove depth is about 50 microns.

[0058] 4. Multiple oxidations to make the interior of the arc-shaped groove smoother: oxidize the silicon wafer after dry e...

Embodiment 3

[0064] The structure diagram of this embodiment can be found in Figure 8 As shown, the specific production method is as follows:

[0065] 1. Selection of silicon substrate: choose a 4-inch silicon wafer with an N-type (100) plane as the substrate, with a resistivity of 3-8Ω·cm, and a silicon wafer thickness of 350±10 microns.

[0066] 2. Making stepped grooves: use silicon oxide as a mask, and form grooves with a series of steps by multiple times of silicon anisotropic wet etching. There are many options for silicon anisotropic etchant, such as: KOH (potassium hydroxide), TMAH (tetramethylammonium hydroxide), or EPW (ethylenediamine, catechol and water).

[0067] 3. Make a groove with a circular arc-shaped cross section: under the protection of silicon oxide, use the method of silicon isotropic dry etching to etch the stepped groove formed in step 2. At this time, the gas will Perform chamfer etching. The final groove depth is about 40 microns.

[0068] 4. Multiple oxidat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Resistivityaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a three-dimensional micro-heater comprising a circular arc-shaped heating film region with adjustable radian and a method, and the three-dimensional micro-heater is characterized in that the heating film region with the adjustable radian is connected with a substrate framework through a support over beam, the cross section of the heating film region is like a circular arc-shaped groove, the radian of the circular arc-shaped groove can be regulated through the etching method, heating resistance wires are arranged in the groove of the heating film region in the form of fold lines or curved lines and connected with an electrode on the substrate framework through a leading wire on the support over beam, and a thermal insulation cavity is arranged below the heating film region and the support over beam. The heating resistance wires of the heater are arranged in the circular arc-shaped groove of the central heating film region with a three-dimensional structure, thereby leading the heat loss caused by convection heat exchange to be small and effectively reducing the power consumption of the heater. The three-dimensional micro-heater can reduce the heat stress of the circular arc-shaped heating film region, improve the mechanical strength at high temperature, and regulate the radian of the heating film region to meet different applications.

Description

technical field [0001] The invention relates to a three-dimensional micro-heater with an adjustable arc-shaped heating film area and a manufacturing method thereof, belonging to the field of micro-electromechanical systems (MEMS). Background technique [0002] With the continuous development of micro-processing technology, micro-heaters based on MEMS technology have begun to be widely used in the fields of gas detection, environmental monitoring and infrared heat sources. Due to the continuous promotion and deepening of applications, the requirements for low power consumption, low cost, high performance and high reliability of micro heaters are also increasingly strong. How to make a heater with low power consumption and high performance has always been the goal pursued by those skilled in the art. [0003] At present, micro-heaters based on silicon substrates can be divided into two types from the supporting membrane structure, namely closed membrane type and suspended mem...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H05B3/14B81C1/00
Inventor 李铁许磊王跃林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com