31 results about "Compliant substrate" patented technology

A multijunction, monolithic, photovoltaic (PV) cell and device (600) is provided for converting radiant energy to photocurrent and photovoltage with improved efficiency. The PV cell includes an array of subcells (602), i.e., active p / n junctions, grown on a compliant substrate, where the compliant substrate accommodates greater flexibility in matching lattice constants to adjacent semiconductor material. The lattice matched semiconductor materials are selected with appropriate band-gaps to efficiently create photovoltage from a larger portion of the solar spectrum. Subcell strings (601, 603) from multiple PV cells are voltage matched to provide high output PV devices. A light emitting cell and device is also provided having monolithically grown red-yellow and green emission subcells and a mechanically stacked blue emission subcell.

An illumination assembly includes a compliant substrate comprising a first and second electrically conductive foil separated by an electrically insulating layer. The insulating layer includes a polymer material loaded with particles that enhance thermal conductivity of the insulating layer. A plurality of LED dies are disposed on the first conductive foil.

A process for making an embossed web. A precursor web is provided between a forming structure and a compliant substrate. The forming structure has a plurality of discrete apertures or depressions. Pressure is provided between the compliant substrate and the forming structure to force the precursor web into the apertures or depressions of forming structure to form the embossed web. The resulting embossed web has a plurality of discrete extended elements.

High quality epitaxial layers of monocrystalline III-V arsenide nitride materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline III-V arsenide nitride material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, an accommodating buffer layer comprising a barium strontium titanium oxide and a monocrystalline III-V arsenide nitride layer, such as GaAsN, having a nitrogen concentration ranging from 1-5% function to further reduce any lattice mismatch between layers.

A process for making an embossed web. A precursor web is provided between a forming structure and a compliant substrate. The forming structure has a plurality of discrete protruded elements and lands completely surrounding them. Pressure is provided between the compliant substrate and the forming structure to conform the precursor web to the forming structure to form the embossed web. The resulting embossed web has a plurality of discrete extended elements completely surrounded by land areas.

A semiconductor structure includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material. A composite transistor includes a first transistor having first active regions formed in the monocrystalline silicon substrate, a second transistor having second active regions formed in the monocrystalline compound semiconductor material, and a mode control terminal for controlling the first transistor and the second transistor.

This invention provides a strained-channel field effect transistor (FET) in which the semiconductor of the channel of the FET is formed in a compliant substrate layer disposed over a twist-bonded semiconductor interface. This FET geometry increases the efficacy of local stress elements such as stress liners and embedded lattice-mismatched source / drain regions by mechanically decoupling the semiconductor of the channel region from the underlying rigid substrate. These strained-channel FETs may be incorporated into complementary metal oxide semiconductor (CMOS) circuits in various combinations. In one embodiment of this invention, both pFETs and nFETs are in a twist-bonded (001) silicon layer on a (001) silicon base layer. In another embodiment, pFETs are in a twist-bonded (011) silicon layer on a (001) silicon base layer and nFETs are in a conventional, non-twist-bonded (001) silicon base layer. This invention also provides a twist-bonded semiconductor layer on a polycrystalline base layer, as well as methods for fabricating the aforementioned FETs.

An illumination assembly includes a compliant substrate comprising a first and second electrically conductive foil separated by an electrically insulating layer. The insulating layer includes a polymer material loaded with particles that enhance thermal conductivity of the insulating layer. A plurality of LED dies are disposed on the first conductive foil.

An illumination assembly includes a compliant substrate comprising a first and second electrically conductive foil separated by an electrically insulating layer. The insulating layer includes a polymer material loaded with particles that enhance thermal conductivity of the insulating layer. A plurality of LED dies are disposed on the first conductive foil.

High quality epitaxial layers of piezoelectric monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the piezoelectric monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying piezoelectric monocrystalline material layer.

System for establishing a surface shape. The system includes a compliant substrate including the surface and having a reverse side, and a plurality of discrete actuators engaging the reverse side and arranged in a selected pattern to control the surface shape as individual discrete activators are activated. It is preferred that the actuators have multiple discrete stable states of elongation. A particularly preferred embodiment uses actuators that are binary with two stable states of elongation.

A multi-well plate can be loaded with a range of compliant substrates. Commerically-available assays can be used to test cellular responses across a plate with shear modulus from 50 to 51200 Pascals. Cells can be grown in the plates, and can be manipulated and analyzed. Hydrogels can be attached to the bottom of a well. The plates can support the attachment and growth of different cell types and can be compatible with standard 96-well and 384-well plate assays. The mechanical properties of the hydrogels can be reproducible and stable to increase the shelf life of the substrate. The hydrogel can be compatible with growth of a variety of cell types, various attachment ligands such as collagen I, collagen IV, flbronectin, vitronectin, laminin, or RGD peptides and can be coupled to the gel surface.

The invention relates to a compliant substrate (5) comprising a carrier (1) and at least one thin layer (4), formed on the surface of the carrier and intended to receive, in integral manner, a stress-giving structure. The carrier (1) and the thin layer (4) are joined to one another by joining means (3) such that the stresses brought by said structure are absorbed in whole or in part by the thin layer (4) and / or by the joining means (3) which comprise at least one joining zone chosen from among the following joining zones: a layer of microcavities and / or a bonding interface whose bonding energy is controlled to permit absorption of said stresses.

A circuit assembly comprising a substrate formed to have one or more apertures that define one or more compliant members in the substrate, and to which a circuit device can be attached so as to reduce thermally-induced stresses in the device and in solder joints securing the device to the substrate. The compliant members are sufficiently compliant to permit relatively large surface-mount devices to be attached to an organic substrate without sacrificing reliability.

High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. A wavelength locker for stabilizing a wavelength of an optical output signal from an optical transmitter is formed overlying the silicon wafer.

Methods and apparatus for holding substrate in a compliant substrate holding assembly are provided. In one embodiment, an apparatus for a compliant substrate holding assembly includes a base plate, a finger disposed on the base plate having a V-shaped slot formed thereon, and two arms disposed on opposite ends of the base plate and each arm having V-shaped slot formed therein. In another embodiment, a method for holding a substrate on a compliant substrate holding assembly includes inserting a substrate into a holding assembly having at least three substrate supporting members and detecting a change in position of one of the substrate supporting structures.

The invention relates to a technical field for making a zinc oxide epitaxial film in semiconductor material and discloses silicon-based covariant substrate material used for growing the zinc oxide epitaxial film, which comprises a silicon single crystal substrate used for supporting the whole silicon-based covariant substrate material; a thin metal hafnium covariant layer; the thin metal hafnium covariant layer is made on the silicon single crystal substrate used for coordinating misfit strain for the zinc oxide epitaxial film which epitaxial grows on the silicon single crystal substrate. By adopting the invention, the misfit strain of the zinc oxide epitaxial film grown on the silicon substrate is coordinated and residual stress is decreased thereby enhancing the crystal quality and improving the appearance of the surface, which lays a foundation for developing silicon based photoelectric devices.

The invention relates to the technical field of epitaxial film preparation of zinc oxide of semiconductor materials and discloses a silicon-based compliant substrate material with thin hafnium nitride compliant layer. The material includes the following components: a single crystal silicon substrate which is used for supporting the whole silicon-based compliant substrate material; a thin hafnium nitride compliant layer, whose preparation is on the single crystal silicon substrate and is used for adjusting mismatch strain of epitaxial grown film of zinc oxide. By adopting the invention, mismatch strain of epitaxial film of zinc oxide on silicon substrate can be adjusted and residual stress be reduced, thus improving the crystal quality and surface appearance and laying a foundation for research of silicon-based optoelectronic devices.

High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. A high quality layer of compound semiconductor material is used to form a source component and a receiver component that are interconnected with an antenna and each other within a semiconductor structure that can detect a parameter, such as the speed, of an object.

System for establishing a surface shape. The system includes a compliant substrate including the surface and having a reverse side, and a plurality of discrete actuators engaging the reverse side and arranged in a selected pattern to control the surface shape as individual discrete activators are activated. It is preferred that the actuators have multiple discrete stable states of elongation. A particularly preferred embodiment uses actuators that are binary with two stable states of elongation.

A process for making an embossed web. A precursor web is provided between a forming structure and a compliant substrate. The forming structure has a plurality of discrete apertures or depressions. Pressure is provided between the compliant substrate and the forming structure to force the precursor web into the apertures or depressions of forming structure to form the embossed web. The resulting embossed web has a plurality of discrete extended elements.

The invention discloses a full-compliancy capacitance and resistance dual mode proximate sense transducer. The full-compliancy capacitance and resistance dual mode proximate sense transducer is characterized in that a capacitance type proximate sense transducer body and a resistance type proximate sense transducer body are arranged on a compliant substrate in a spaced mode, and the capacitance type proximate sense transducer body and the resistance type proximate sense transducer body cooperate to perceive object proximity information in a segmented mode. According to the full-compliancy capacitance and resistance dual mode proximate sense transducer, the capacitance and resistance dual mode is utilized to cooperatively detect the object proximity information in a segmented mode, and therefore the accuracy of the transducer can be improved; all structures of the transducer have the compliancy, all leads are led to the same compliant substrate, and therefore the problems that the leads are tedious, not beautiful and not easy to maintain during array structure design are solved.

A gallium nitride based compound semiconductor device including a compliant substrate having a reduced stress and a method for manufacturing the same are disclosed. The compliant substrate included in the gallium nitride based compound semiconductor device is manufactured by heating a substrate and a group III metal including at least one of an aluminum, a gallium and an indium, and a chloride based compound generated by introducing a HCl gas to the melted group III metal reacts with a NH3 gas to form a nitride based thin film on the wafer.

The present invention relates to a compliant substrate having a top surface for receiving a heteroepitaxial structure or heteroepitaxial layer. This substrate comprises a carrier substrate, a top single-crystalline layer, a buried layer located between the carrier substrate and the top layer, and a weakened region located in the top layer or between the top layer and the buried layer such that the compliant substrate facilitates relaxed growth of a heteroepitaxial layer or structure upon the top surface. The invention also relates to the combination of the compliant substrate and a heteroepitaxial layer provided thereon, as well as to a method of making the compliant substrate and combination.

The invention relates to a technical field for making a zinc oxide epitaxial film in semiconductor material and discloses silicon-based covariant substrate material used for growing the zinc oxide epitaxial film, which comprises a silicon single crystal substrate used for supporting the whole silicon-based covariant substrate material; a thin metal hafnium covariant layer; the thin metal hafnium covariant layer is made on the silicon single crystal substrate used for coordinating misfit strain for the zinc oxide epitaxial film which epitaxial grows on the silicon single crystal substrate. By adopting the invention, the misfit strain of the zinc oxide epitaxial film grown on the silicon substrate is coordinated and residual stress is decreased thereby enhancing the crystal quality and improving the appearance of the surface, which lays a foundation for developing silicon based photoelectric devices.

A Method and Apparatus for Comparing Colors have been disclosed. In one implementation a compliant membrane which is substantially transparent with an area having a shade / color is placed on the user's skin to see what the shade / color will look like on the skin. In one implementation a compliant substrate which is largely transparent with an area having a shade / color is placed on an inanimate object to see how the shade / color will appear on the inanimate object without the substrate itself causing an unnecessary barrier between the inanimate object and the shade / color.

A compliant substrate having a reduced stress, a method for manufacturing the same having a reduced manufacturing time, a gallium nitride based compound semiconductor device including the compliant substrate and a method for manufacturing the same are disclosed. The compliant substrate is manufactured by heating a substrate and a group III metal including at least one of an aluminum, a gallium and an indium, and a chloride based compound generated by introducing a HCl gas to the melted group III metal reacts with a NH3 gas to form a nitride based thin film on the wafer.