The invention discloses a ferroelectric field regulated two-dimensional material PN junction photoelectric
detector and a preparation method thereof. The structure of the
detector sequentially comprises an insulating substrate, a bipolar two-dimensional
semiconductor, a
metal electrode and a ferroelectric functional layer from bottom to top. The preparation method of the
detector comprises the following steps: preparing the bipolar two-dimensional
semiconductor on the substrate by using a mechanical stripping method; preparing a
metal electrode by combining an
ultraviolet photoetching method or an
electron beam photoetching method with a thermal
evaporation and stripping process; preparing a ferroelectric film on the structure through a spin-
coating method, then enabling ferroelectric materials at the two sides above a two-dimensional material to be opposite in polarization direction through a piezoelectric force
microscope, regulating and controlling the
electron conduction and hole conduction at the two sides of a two-dimensional
semiconductor through a ferroelectric local area field to form an in-plane PN junction which is used for photoelectric detection. When the detector works, no external
voltage is needed, the photoelectric detection is achieved by measuring current
signal changes under illumination; and the detector can also be used for
photovoltaic energy conversion.The detector has the characteristics of high sensitivity, low
dark current, fast response, good stability, low
power consumption and the like.