Ferroelectric field regulated and controlled two-dimensional material PN junction photoelectric detector and preparation method thereof

Abstract

The invention discloses a ferroelectric field regulated two-dimensional material PN junction photoelectric detector and a preparation method thereof. The structure of the detector sequentially comprises an insulating substrate, a bipolar two-dimensional semiconductor, a metal electrode and a ferroelectric functional layer from bottom to top. The preparation method of the detector comprises the following steps: preparing the bipolar two-dimensional semiconductor on the substrate by using a mechanical stripping method; preparing a metal electrode by combining an ultraviolet photoetching method or an electron beam photoetching method with a thermal evaporation and stripping process; preparing a ferroelectric film on the structure through a spin-coating method, then enabling ferroelectric materials at the two sides above a two-dimensional material to be opposite in polarization direction through a piezoelectric force microscope, regulating and controlling the electron conduction and hole conduction at the two sides of a two-dimensional semiconductor through a ferroelectric local area field to form an in-plane PN junction which is used for photoelectric detection. When the detector works, no external voltage is needed, the photoelectric detection is achieved by measuring current signal changes under illumination; and the detector can also be used for photovoltaic energy conversion.The detector has the characteristics of high sensitivity, low dark current, fast response, good stability, low power consumption and the like.

Description

technical field [0001] The invention relates to a two-dimensional semiconductor photodetection device, in particular to a two-dimensional material PN junction photodetector regulated by a ferroelectric field and a preparation method thereof. Background technique [0002] In the past ten years, two-dimensional materials have received extensive attention and research in various fields due to their unique properties. Two-dimensional materials represented by graphene, black phosphorus, and molybdenum disulfide have made major breakthroughs in different fields such as biology, medicine, chemistry, and physics. Since most 2D materials have semiconducting properties and their band gaps are varied enough to cover the entire spectrum, they also show great potential in the field of photodetection. For example, the detection research of graphene in the terahertz band and the detection research of other two-dimensional materials in the ultraviolet to infrared band provide a new way for...

AI Technical Summary

Problems solved by technology

Since the photocurrent of a single two-dimensional material mainly comes from the photoconductive effect, the photoresponse is slow and the responsivity is low.

Images