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Ferroelectric domain defined series two-dimensional photovoltaic cell and preparation method thereof

A photovoltaic cell and ferroelectric domain technology, applied in the field of two-dimensional semiconductor photovoltaic devices, can solve the problems of complicated process and difficult control of doping level, and achieve the effect of avoiding polluting materials and reducing energy consumption

Pending Publication Date: 2020-12-15
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods are more complicated, and the doping level is usually difficult to control

Method used

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  • Ferroelectric domain defined series two-dimensional photovoltaic cell and preparation method thereof
  • Ferroelectric domain defined series two-dimensional photovoltaic cell and preparation method thereof
  • Ferroelectric domain defined series two-dimensional photovoltaic cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment example 1

[0037] The specific steps for implementing Case 1 are as follows:

[0038] 1) Insulator silicon substrate preparation

[0039] The silicon-insulator substrate is a silicon substrate whose surface is covered with silicon dioxide with a thickness of 285 nm.

[0040] 2) Preparation and transfer of two-dimensional semiconductors of bipolar transition metal compounds

[0041] 8-nm ambipolar transition metal compound two-dimensional semiconductor MoTe by mechanical exfoliation 2 onto a silicon-insulator substrate.

[0042] 3) Metal electrode preparation

[0043] The metal electrode 3 is prepared by using ultraviolet lithography or electron beam exposure technology combined with thermal evaporation and lift-off process. The electrodes consist of chromium and gold with a thickness of 15 nanometers for chromium and 25 nanometers for gold. The prepared three metal electrodes are respectively located at both ends and in the middle of the bipolar transition metal compound two-dimensi...

Embodiment example 2

[0048] The specific steps for implementing Case 2 are as follows:

[0049] 1) Insulator silicon substrate preparation

[0050] The silicon-insulator substrate is a silicon substrate whose surface is covered with silicon dioxide with a thickness of 285 nm.

[0051] 2) Preparation and transfer of two-dimensional semiconductors of bipolar transition metal compounds

[0052] 10-nanometer bipolar transition metal compound two-dimensional semiconductor MoTe by mechanical exfoliation 2 onto a silicon-insulator substrate.

[0053] 3) Metal electrode preparation

[0054] The metal electrode 3 is prepared by using ultraviolet lithography or electron beam exposure technology combined with thermal evaporation and lift-off process. The electrodes consist of chromium and gold with a thickness of 15 nanometers for chromium and 25 nanometers for gold. The prepared three metal electrodes are respectively located at both ends and in the middle of the bipolar transition metal compound two-d...

Embodiment example 3

[0059] The specific steps for implementing Case 3 are as follows:

[0060] 1) Insulator silicon substrate preparation

[0061] The silicon-insulator substrate is a silicon substrate whose surface is covered with silicon dioxide with a thickness of 285 nm.

[0062] 2) Preparation and transfer of two-dimensional semiconductors of bipolar transition metal compounds

[0063] 12-nanometer bipolar transition metal compound two-dimensional semiconductor MoTe by mechanical exfoliation 2 onto a silicon-insulator substrate.

[0064] 3) Metal electrode preparation

[0065] The metal electrode 3 is prepared by using ultraviolet lithography or electron beam exposure technology combined with thermal evaporation and lift-off process. The electrodes consist of chromium and gold with a thickness of 15 nanometers for chromium and 25 nanometers for gold. The prepared three metal electrodes are respectively located at both ends and in the middle of the bipolar transition metal compound two-d...

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Abstract

The invention discloses a ferroelectric domain defined series two-dimensional photovoltaic cell and a preparation method thereof. The photovoltaic cell structure sequentially comprises a ferroelectricfunctional layer, a metal electrode, a two-dimensional semiconductor and an insulating silicon substrate from top to bottom. The preparation method comprises the following steps: preparing a transition metal chalcogenide two-dimensional semiconductor on a substrate, preparing metal electrodes as a source electrode and a drain electrode of a semiconductor channel by using an ultraviolet lithography or electron beam exposure method in combination with a thermal evaporation and stripping process, and then preparing a ferroelectric film by using a spin-coating method to cover the structure. And then using a piezoelectric force microscopy technology to write positive and negative domain structures into the two channels respectively, so that the ferroelectric domain can regulate and control thetwo sides of the bipolar two-dimensional semiconductor to present hole and electron conduction respectively, and an in-plane PNPN junction is formed. Compared with a single PN junction, the series PNjunction formed by the method has the characteristic of doubled increase of open-circuit voltage, the preparation process is simple, the size of the device is small, and the stability of the device is good.

Description

technical field [0001] The invention relates to a two-dimensional semiconductor photovoltaic device, in particular to a serial two-dimensional photovoltaic cell defined by a ferroelectric domain and a preparation method thereof. Background technique [0002] Photovoltaic devices are used to convert solar energy into electricity. Light shining on the device is absorbed by the semiconductor material, generating electron-hole pairs that are separated by the built-in electric field of the photovoltaic device, and the separated electrons and holes generate photovoltage and photocurrent across the junction. A PN junction is a typical photovoltaic device. [0003] The open circuit voltage value (Voc) is a key factor to improve the efficiency of the cell, it shows the number of charge carriers present in the cell when light is irradiated on the solar cell, which can effectively improve the performance of the solar cell. However, the output voltage of solar cells is usually limited...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/0224H01L31/18
CPCH01L31/022425H01L31/032H01L31/18Y02E10/50Y02P70/50
Inventor 王建禄伍帅琴吴广健王旭东沈宏林铁孟祥建褚君浩
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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