Ferroelectric domain defined series two-dimensional photovoltaic cell and preparation method thereof

A technology of photovoltaic cells and ferroelectric domains, applied in the field of two-dimensional semiconductor photovoltaic devices, can solve problems such as complex processes and difficult control of doping levels, and achieve the effect of reducing energy consumption

Inactive Publication Date: 2020-06-19
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods are more complicated, and the doping level is usually difficult to control

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ferroelectric domain defined series two-dimensional photovoltaic cell and preparation method thereof
  • Ferroelectric domain defined series two-dimensional photovoltaic cell and preparation method thereof
  • Ferroelectric domain defined series two-dimensional photovoltaic cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment example 1

[0037] The specific steps for implementing Case 1 are as follows:

[0038] 1) Preparation of insulating substrate

[0039] The insulating substrate is a silicon substrate covered with silicon dioxide;

[0040] 2) Preparation and transfer of two-dimensional semiconductors of bipolar transition metal compounds

[0041] Bipolar transition metal compound two-dimensional semiconductor 8 nm MoTe by mechanical exfoliation 2 transferred to an insulating substrate.

[0042] 3) Metal electrode preparation

[0043] The metal electrode 3 is prepared by using ultraviolet lithography or electron beam exposure technology combined with thermal evaporation and lift-off technology. The electrodes are chromium and gold, the thickness of chromium is 10 nm, and the thickness of gold is 20 nm.

[0044] 4) Preparation of ferroelectric functional layer

[0045] The polyvinylidene fluoride-based ferroelectric functional layer was prepared by spin coating on the prepared device, and annealed at 1...

Embodiment example 2

[0048] The specific steps for implementing Case 2 are as follows:

[0049] 1) Preparation of insulating substrate

[0050] The insulating substrate is a silicon substrate covered with silicon dioxide;

[0051] 2) Preparation and transfer of two-dimensional semiconductors of bipolar transition metal compounds

[0052] Bipolar transition metal compound two-dimensional semiconductor 10 nm MoTe by mechanical exfoliation 2 transferred to an insulating substrate.

[0053] 3) Metal electrode preparation

[0054] The metal electrode 3 is prepared by using ultraviolet lithography or electron beam exposure technology combined with thermal evaporation and lift-off technology. The electrodes are chromium and gold with a thickness of 10 nm and 20 nm, respectively.

[0055] 4) Preparation of ferroelectric functional layer

[0056] The polyvinylidene fluoride-based ferroelectric functional layer was prepared by spin coating on the prepared device, and annealed at 135°C for 2 hours to e...

Embodiment example 3

[0059] The specific steps for implementing Case 3 are as follows:

[0060] 1) Preparation of insulating substrate

[0061] The insulating substrate is a silicon substrate covered with silicon dioxide;

[0062] 2) Preparation and transfer of two-dimensional semiconductors of bipolar transition metal compounds

[0063] Bipolar transition metal compound two-dimensional semiconductor 12 nm MoTe by mechanical exfoliation 2 transferred to an insulating substrate.

[0064] 3) Metal electrode preparation

[0065] The metal electrode 3 is prepared by using ultraviolet lithography or electron beam exposure technology combined with thermal evaporation and lift-off technology. The electrodes are chromium and gold with a thickness of 10 nm and 20 nm, respectively.

[0066] 4) Preparation of ferroelectric functional layer

[0067] The polyvinylidene fluoride-based ferroelectric functional layer was prepared by spin coating on the prepared device, and annealed at 135°C for 2 hours to e...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a ferroelectric domain defined series two-dimensional photovoltaic cell and a preparation method thereof. The photovoltaic cell structure sequentially comprises a substrate, atwo-dimensional semiconductor, metal source and drain electrodes and a ferroelectric functional layer from bottom to top. The preparation method of the device comprises the following steps: preparinga transition metal chalcogenide two-dimensional semiconductor on a substrate; preparing a metal electrode by combining an ultraviolet lithography or electron beam exposure method with a thermal evaporation and stripping process to serve as a source electrode and a drain electrode of a semiconductor channel; preparing a ferroelectric film on the bipolar two-dimensional semiconductor by using a spincoating method, writing a forward-reverse domain structure into each ferroelectric film directly facing a semiconductor channel by using a piezoelectric force microscopy technology, and regulating and controlling two sides of the bipolar two-dimensional semiconductor by using ferroelectric domains to respectively show hole and electron conduction so as to form a plurality of in-plane PN junctionsconnected in series. Compared with a single PN junction, the series PN junction formed by the method has the characteristic of doubled increase of open-circuit voltage, has no special requirements ontwo-dimensional material and gate structure preparation, and has good PN junction stability.

Description

technical field [0001] The invention relates to a two-dimensional semiconductor photovoltaic device, in particular to a serial two-dimensional photovoltaic cell defined by a ferroelectric domain and a preparation method thereof. Background technique [0002] Photovoltaic devices are used to convert solar energy into electricity. Light shining on the device is absorbed by the semiconductor material, generating electron-hole pairs that are separated by the built-in electric field of the photovoltaic device, and the separated electrons and holes generate photovoltage and photocurrent across the junction. A PN junction is a typical photovoltaic device. [0003] The open circuit voltage value (Voc) is a key factor to improve the efficiency of the cell, it shows the number of charge carriers present in the cell when light is irradiated on the solar cell, which can effectively improve the performance of the solar cell. However, the output voltage of solar cells is usually limited...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/0224H01L31/18
CPCH01L31/022425H01L31/032H01L31/18Y02E10/50Y02P70/50
Inventor 王建禄伍帅琴吴广健王旭东沈宏林铁孟祥建褚君浩
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap