Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Solenoid type heating resistor-containing three-dimensional microheater and manufacturing method thereof

A technology of heating resistance and heating resistance wire, applied in the direction of heating element, heating element shape, ohmic resistance heating parts, etc., to achieve the effects of good controllability, improved performance and high efficiency

Inactive Publication Date: 2011-01-05
上海芯敏微系统技术有限公司
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention intends to provide a three-dimensional micro-heater with a spiral heating resistor manufactured by silicon anisotropic wet etching process. The stripping process based on glue spraying and photolithography solves the problem of making heating resistance wire inside the groove

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solenoid type heating resistor-containing three-dimensional microheater and manufacturing method thereof
  • Solenoid type heating resistor-containing three-dimensional microheater and manufacturing method thereof
  • Solenoid type heating resistor-containing three-dimensional microheater and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] For the structural diagram of this embodiment, see figure 2 As shown in (a), the specific production method is as follows:

[0034] 1. Substrate selection: choose N-type (100) surface 4-inch silicon wafer as the substrate, resistivity 3-8Ω·cm, silicon wafer thickness 350±10 microns, and trimming angle error <1%.

[0035] 2. Make the front etching window used to form the groove structure, and define the silicon oxide layer used to form the upper heating resistance wire support beam: First, use the method of thermal oxidation to grow a layer of silicon oxide with a thickness of 1.0 micron on the surface of the silicon wafer film. Then, the front side photolithography is performed to make a window pattern, and the exposed silicon oxide is completely etched by reactive ion etching (RIE) under the protection of the photoresist to form a front side etching window, and at the same time, the supporting beam for forming the upper heating resistance wire is defined The shape of the ...

Embodiment 2

[0042] For the structural diagram of this embodiment, see Figure 4 As shown in (a), the specific production method is as follows:

[0043] 1. Substrate selection: Choose a 4-inch silicon wafer with a P-type (100) surface as the substrate, with a resistivity of 3-8Ω·cm, a silicon wafer thickness of 350±10 microns, and an angle error of trimming <1%.

[0044] 2. Make the front etching window used to form the groove structure, and define the silicon oxide layer used to form the upper heating resistance wire support beam: First, use the thermal oxidation method to grow a layer of silicon oxide with a thickness of 1.0 μm on the surface of the silicon wafer film. Then, the front side photolithography is performed to make a window pattern, and the exposed silicon oxide is completely etched by reactive ion etching (RIE) under the protection of the photoresist to form a front side etching window, and at the same time, the supporting beam for forming the upper heating resistance wire is de...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Total thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Resistivityaaaaaaaaaa
Login to View More

Abstract

The invention relates to a solenoid type heating resistor-containing three-dimensional microheater and a manufacturing method thereof. The solenoid type heating resistor-containing three-dimensional microheater is characterized in that: a groove-shaped heating area supporting film is connected with a substrate frame through a supporting suspension girder; the cross section of the groove-shaped heating area supporting film has a V-shaped or reverse trapezoidal structure; an upper heating resistance wire is connected with a lower heating resistance wire to form a solenoid type heating resistor embedded in the heating area supporting film and the solenoid type heating resistor is connected with an electrode on the substrate frame through a lead on the supporting suspension girder; and the heating area supporting film and the solenoid type heating resistor embedded in the heating area supporting film are supported by the supporting suspension girder to be suspended on a silicon substrate. The heating resistor of the three-dimensional microheater provided by the invention has a solenoid type structure and is embedded in the heating area supporting film, so annularly heating can be realized and the heating efficiency is high. The three-dimensional microheater is particularly suitable for the fields of infrared light sources and sensing.

Description

Technical field [0001] The invention relates to a three-dimensional miniature heater with a solenoid heating resistor and a manufacturing method thereof, belonging to the field of microelectronic mechanical systems (MEMS). Background technique [0002] With the continuous development of micro processing technology, micro heaters based on MEMS technology have begun to be widely used in gas detection, environmental monitoring and infrared light sources. Due to the continuous promotion and deepening of applications, the requirements for low power consumption, low cost, high performance and high reliability of micro heaters are becoming stronger. How to make a heater with low power consumption and high performance has always been a goal pursued by those skilled in the art. [0003] At present, micro heaters based on silicon substrates are divided into supporting membrane structures, and there are mainly two types, namely, a closed membrane type and a suspended membrane type. The boun...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H05B3/40H05B3/06B81C1/00
Inventor 李铁许磊王跃林
Owner 上海芯敏微系统技术有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com