Preparation method of height-oriented ZnO nanocone array structure material

A technology of array structure and nano-cones, which is applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of high reaction temperature and insufficient uniformity, and achieve good repeatability and uniform thickness , Improve the effect of adhesion

Inactive Publication Date: 2014-01-22
SOUTHEAST UNIV
View PDF4 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a method for preparing a highly oriented ZnO nanocone array structure material in order to overcome the problems of high reaction temperature and insufficient uniformity in the above-mentioned prior art, so as to obtain highly oriented ZnO nanocone array materials prepared on different substrates. Neat array of ZnO nanocones

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of height-oriented ZnO nanocone array structure material
  • Preparation method of height-oriented ZnO nanocone array structure material
  • Preparation method of height-oriented ZnO nanocone array structure material

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0037] ③Preparation of seed layer: Prepare a layer of ZnO colloidal film on the cleaned substrate (such as Cu sheet or FTO glass) by spin-coating method; after annealing at 350°C for 10 minutes, a uniform and dense layer is formed on the surface of the substrate. Nanoscale ZnO seed layer.

[0038] ④ Preparation of array growth solution: use KOH and Zn(NO 3 ) 2 The preparation concentration is 0.10~0.25mol L -1 Zn(OH) 4 2- aqueous solution, and the pH value of the solution is controlled between 10 and 12, and fully magnetically stirred to obtain a clear solution, which is the required array growth solution.

[0039] ⑤ Preparation of the array: Pour the array growth solution into the reaction container, and then suspend the substrate with the seed layer prepared downward in the array growth solution (such as Figure 8 shown), then seal the reaction vessel, place it in an electric heating constant temperature water bath, keep it warm for 1-12 hours in a water bath at 20-50°C...

Embodiment 1

[0041] Embodiment 1: Preparation of base seed crystal layer

[0042] Using the pre-prepared colloid above, a layer of ZnO colloid film was prepared on the Cu substrate by using a KW-4A desktop colloidal machine for spin coating; annealing at 350°C for 10 minutes in an argon atmosphere formed a layer of ZnO colloid on the surface of the substrate. Uniform and dense nano-scale ZnO seed crystal layer, such as image 3 shown.

Embodiment 2

[0043] Embodiment 2: Cu substrate grows ZnO nano cone array at 35 ℃

[0044] Adopt the substrate placing method described in the present invention, in by KOH and Zn(NO 3 ) 2 Prepared 0.25mol·L with pH=12 -1 Zn(OH) 4 2- In the reaction system, the ZnO array thin films prepared after growing in a water bath at 35°C for 4h, 8h, and 12h with the Cu sheet prepared with a seed layer as the substrate, the morphologies are as follows: Figure 4 , Figure 5 , Image 6 shown. The FESEM results of the sample show that ZnO is cone-shaped and nanoscale, showing a high degree of preferred orientation; the overall array is good. Sample XRD grown for 12h ( Figure 7 ) results show that the obtained array composition is the ZnO phase with hexagonal wurtzite structure, and the spectrum is completely consistent with the diffraction data of the standard card (PDF#36-1451). Compared with the standard spectrum of ZnO powder, the (002) diffraction peak has a relative The higher intensity in...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a liquid chemistry growing method of a height-oriented ZnO nanocone array. According to the liquid chemistry growing method of the height-oriented ZnO nanocone array, ZnO colloidal sol coats a substrate through a spin coating film method, and a uniform nanoscale ZnO crystal seed layer is prepared through heat treatment; ZnO array growth liquid is prepared with KOH and Zn (NO3)2; a growing face (the face containing the crystal seed layer) of the substrate is suspended and immersed in the growth liquid in an inverse buckling mode, the reaction lasts for 1-12 hours under the condition of water bath at 20-50 DEG C, and the ZnO nanocone array is prepared on the substrate. The liquid chemistry growing method of the height-oriented ZnO nanocone array has the advantages of being simple in equipment and process, easy to operate, low in cost, suitable for industrial production and the like. The prepared ZnO nanocone array has the advantages of being highly compact, uniform in thickness, good in orientation, high in flatness, stable in performance, capable of being firmly combined with the substrate and the like, and has wide application prospects and great market benefits on the aspects of super-hydrophobic surfaces, detectors, piezoelectric frequency converters, ultraviolet laser, solar cells and the like.

Description

technical field [0001] The invention belongs to the technical field of low-dimensional nanostructure semiconductor materials, in particular to a wet chemical growth method of a highly oriented ZnO nanocone array. Background technique [0002] ZnO is a direct wide bandgap (3.37eV, 300K) compound semiconductor material with a wurtzite structure in the II-VI group, because of its excellent physical and chemical properties, such as extremely high elastic modulus, extremely low thermal expansion coefficient, and high thermal stability. properties, large exciton binding energy, and negative electron affinity, etc., have potential applications in many fields such as sensors, UV emission, photoelectric conversion, superhydrophobic interface, photocatalysis, and light-emitting diodes. of high attention. At present, among the many ZnO-based microstructure materials that have been successfully prepared, one-dimensional nanostructure array materials such as ZnO nanowire arrays, nanorod...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02B82Y30/00B82Y40/00
Inventor 余新泉夏咏梅吴春晓章雯张友法陈锋
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap