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Method for fabricating selective textured surface and emitter of silicon solar cell by laser

A silicon solar cell, selective technology, applied in photovoltaic power generation, circuits, electrical components and other directions, can solve the problem of inability to take into account the open voltage current and fill factor, etc., to achieve and fill factor improvement, increase specific surface area, low contact resistance rate effect

Inactive Publication Date: 2019-02-15
JIANGSU LINYANG PHOTOVOLTAIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Battery efficiency = opening voltage × short-circuit current density × fill factor, so the opening voltage current and fill factor cannot be considered in the normal process

Method used

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  • Method for fabricating selective textured surface and emitter of silicon solar cell by laser
  • Method for fabricating selective textured surface and emitter of silicon solar cell by laser
  • Method for fabricating selective textured surface and emitter of silicon solar cell by laser

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Embodiment Construction

[0031] The present invention will be further described below in conjunction with embodiment, but protection scope of the present invention is not limited to this:

[0032] combine Figure 5 , a method for laser preparing silicon solar cell selective textured surface and emitter, it comprises the following steps:

[0033] Step 1: Alkali polishing is performed on the front and back surfaces of the silicon wafer 1;

[0034] Step 2: Carry out laser etching on the back surface of the silicon wafer 1 to prepare the suede surface 2; wherein, the laser wavelength is selected as 532nm, and the spot diameter is 50-80um; the finally formed suede surface 2 structure has a width of 100-160um and a depth of 1 -5um grooves, the number and length of the suede grooves are consistent with the metal fine grid lines on the back;

[0035] Step 3: Clean the silicon wafer with a mixture of hydrofluoric acid and hydrochloric acid, remove the damaged layer, and form a polished surface 3; the mixture...

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Abstract

The invention discloses a method for fabricating a selective textured surface and an emitter of a silicon solar cell by laser. The textured surface is fabricated at a metal electrode gate line contactregion by the laser on a back surface of a polished single crystal wafer to form a rough surface, the specific area is expanded, so that low contact resistivity between a gate line and a silicon baseis ensured; and a back polishing surface is fabricated at a non-metal contact region by an alkali polishing process, the recombination rate of minority carriers at the non-metal contact region is facilitated, an open current and a filling factor are simultaneously increased, and the conversion efficiency absolute value of the cell can be improved by 0.2-0.3%.

Description

technical field [0001] The invention mainly relates to the preparation technology of the suede surface of the solar cell, in particular to a method for preparing the selective suede surface and the emitter of the silicon solar cell by laser. Background technique [0002] With the increasingly fierce competition in the crystalline silicon solar cell market, continuous improvement of the efficiency of silicon solar cells has become the main means for companies to maintain technological leadership while reducing manufacturing costs. At present, the production process of general silicon solar cells includes silicon wafer texturing, diffusion, wet etching, anti-reflection film deposition, screen printing and sintering and other steps. The recombination of electron holes in silicon solar emitter, body region and back side is the main factor restricting the cell efficiency, and reducing the recombination rate of minority carriers on the back side of silicon solar cells is an import...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/0224H01L31/0236H01L31/18
CPCH01L31/02168H01L31/0224H01L31/02363H01L31/1804Y02E10/547Y02P70/50
Inventor 董超徐硕贤叶枫李云朋刘玉巧张耀陈景
Owner JIANGSU LINYANG PHOTOVOLTAIC TECH
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