7 results about "Fringing capacitance" patented technology

The embodiment of the invention discloses a wide-range dielectric constant standard substance and a traceable valuing method thereof. The standard substance is based on a four-stage material system of high density polyethylene (HDPE), polyvinylidene fluoride (PVDF), aluminum oxide (Al2O3) and barium titanate (BaTiO3), and wide-range coverage of a single-piece dielectric constant epsilon r of 2.3-118 is realized through volume ratio regulation and control. And an annular retaining ring electrode structure (1-3mm unplated area is reserved on the edge) is adopted, so that the edge capacitance is inhibited to be less than 0.03% of the total capacitance, and the traditional edge correction is avoided. According to the constant value method, a sodium chloride solution (0.760 mol.kg <-1 >) is taken as a first-grade standard, and a quantity value is transmitted through a parallel plate clamp constant, so that the calibration requirement of a frequency band of 100Hz-1MHz is met. The uncertainty is less than or equal to 0.6% (k = 2), and the problems of narrow mass range, complex operation and difficult traceability of the existing standard substance are solved.

A field effect transistor (FET) device is provided. The FET device includes an active region and a gate. The active region includes a source at a first end thereof and a drain at a second end thereof. The gate extends across the active region and includes at least one end that extends beyond a corresponding edge of the active region by a sub-lithographic dimension.

The application discloses a thin film dielectric constant measurement structure and a measurement method thereof. The application sets the first and second measurement units each comprising a plurality of metal strips in series and having different line widths, measures capacitance and calculates to obtain the edge capacitance in the interlayer capacitance and the parasitic capacitance, further sets the third measurement unit comprising a plurality of metal strips in parallel, measures capacitance and calculates to obtain the in-layer coupling capacitance in the parasitic capacitance; thus, the thin film dielectric constant measurement structure provided by the embodiment can measure and exclude the parasitic capacitance interference including the edge capacitance and the in-layer coupling capacitance, obtain the thin film dielectric constant of the thin film dielectric layer under the corresponding line width by obtaining the actual capacitance, and effectively improve the precision of the capacitance and dielectric constant measurement.

The invention relates to the technical field of oil detection, and discloses a capacitive abrasive particle detection sensor based on an edge enhanced coplanar electrode structure and an online oil detection system, the sensor comprises a metal shielding shell, an integrated flow channel structure, an electrode substrate, a coplanar electrode and an electrode plate groove. The two coplanar electrodes adopt the same overall contour and edge enhancement structure, the coplanar electrodes are square, continuous and periodic groove structures are respectively formed on four edges of the coplanar electrodes, and the groove structures on the edges are the same. According to the invention, electrode design of a coplanar arrangement structure is adopted, an enhanced edge structure is introduced by considering an electrode edge effect, and an edge capacitance correction term is constructed for edge electric field correction, so that the problems of non-uniform electric field and insufficient detection precision caused by the fact that a traditional coaxial capacitance sensor does not consider the electrode edge effect are solved; electric field enhancement of the central area of the flow channel and high-sensitivity monitoring of the whole watershed are achieved, the abrasive particle detection precision and the sensor space sensitivity are improved, and the detection precision of the sensor is improved.

A display panel includes a base substrate, and pixel driving circuits disposed on the base substrate. A pixel driving circuit in the pixel driving circuits includes a driving transistor and a capacitor. A gate of the driving transistor is farther from the base substrate than an active layer of the driving transistor. An active portion of the active layer includes edges that are flush with respective edges of the gate. A first electrode plate of the capacitor is coupled to the gate of the driving transistor. A second electrode plate of the capacitor is disposed on a side of the gate away from the base substrate, and is able to shield light. Orthographic projections, on the base substrate, of the edges of the active portion that are flush with respective edges of the gate are located within an orthographic projection of the second electrode plate on the base substrate.

A semiconductor device includes a first capacitor block including a first conductive plate, and first lower electrodes on the first conductive plate, a second capacitor block including a second conductive plate spaced apart from the first conductive plate, and second lower electrodes on the second conductive plate, a first edge capacitor block including first edge electrodes on the first conductive plate and surrounding the first capacitor block, a second edge capacitor block including a second edge electrodes on the second conductive plate and surrounding the second capacitor block and a first electrode support which supports the first lower electrodes, the second lower electrodes, the first edge electrodes, and the second edge electrodes. A first penetration pattern penetrates the first electrode support, is over the first lower electrodes and the second lower electrodes, and is not over the first edge electrodes and the second edge electrodes.

A semiconductor device includes a substrate, a gate oxide layer formed on the substrate, a gate formed on the gate oxide layer, and a spacer formed adjacent the gate and over the substrate. The spacer includes a void filled with air to prevent leakage of charge to and from the gate, thereby reducing data loss and providing better memory retention. The reduction in charge leakage results from reduced parasitic capacitances, fringing capacitances, and overlap capacitances due to the low dielectric constant of air relative to other spacer materials. The spacer can include multiple layers such as oxide and nitride layers. In some embodiments, the semiconductor device is a multiple-time programmable (MTP) memory device.