37results about How to "Reduce external resistance" patented technology

Semiconductor devices and methods for fabricating semiconductor devices are provided. One exemplary method comprises providing a silicon-comprising substrate having a first surface, etching a recess into the first surface, the recess having a side surface and a bottom surface, implanting carbon ions into the side surface and the bottom surface, and forming an impurity-doped, silicon-comprising region overlying the side surface and the bottom surface.

A high-performance semiconductor structure and a method of fabricating such a structure are provided. The semiconductor structure includes at least one gate stack, e.g., FET, located on an upper surface of a semiconductor substrate. The structure further includes a first epitaxy semiconductor material that induces a strain upon a channel of the at least one gate stack. The first epitaxy semiconductor material is located at a footprint of the at least one gate stack substantially within a pair of recessed regions in the substrate which are present on opposite sides of the at least one gate stack. A diffused extension region is located within an upper surface of said first epitaxy semiconductor material in each of the recessed regions. The structure further includes a second epitaxy semiconductor material located on an upper surface of the diffused extension region. The second epitaxy semiconductor material has a higher dopant concentration than the first epitaxy semiconductor material.

An implantable medical assembly includes a cover having a porous chamber. Enclosed within the chamber is a medical device through which aqueous body fluid flows from an outlet of the device into the chamber. The chamber is formed at least in part from a porous material that promotes vascularization and inhibits fibrotic encapsulation upon implantation and that allows aqueous body fluid in the chamber to flow through the porous material into body tissue in which the assembly is implanted. The chamber has a pair of walls that are spaced apart at a first portion of the chamber at or near the outlet and converge at a second portion of the chamber downstream of the outlet.

A MOSFET device is formed on top of a semiconductor-on-insulator (SOI) substrate having a semiconductor layer with a thickness ranging from 3 nm to 20 nm. A stair-shape raised extension, a raised source region and a raised drain region (S/D) are formed on top of the SOI substrate. The thinner raised extension region abuts at a thin gate sidewall spacer, lowering the extension resistance without significantly increasing the parasitic resistance. A single epitaxial growth forms the thinner raised extension and the thicker raised S/D preferably simultaneously, reducing the fabrication cost as well as the contact resistance between the raised S/D and the extension. A method of forming the aforementioned MOSFET device is also provided.

A wiring layer is provided on a semiconductor substrate and extends in a predetermined direction. An external connection electrode terminal is provided on the wiring layer through a plurality of column-shaped conductors. The column-shaped conductors are located under the external connection electrode terminal. A density of arrangement of the column-shaped conductors is varied according to a direction of extension of the wiring layer.

A method of forming an integrated circuit structure includes providing a substrate, and epitaxially growing a first semiconductor layer over the substrate. The first semiconductor layer includes a first III-V compound semiconductor material formed of group III and group V elements. The method further includes forming a gate structure on the first semiconductor layer, and forming a gate spacer on at least one sidewall of the gate structure. After the step of forming the gate structure, a second semiconductor layer including a second III-V compound semiconductor material is epitaxially grown on the first semiconductor layer.

A disposable dielectric structure is formed on a semiconductor-on-insulator (SOI) substrate such that all physically exposed surfaces of the disposable dielectric structure are dielectric surfaces. A semiconductor material is selectively deposited on semiconductor surfaces, while deposition of any semiconductor material on dielectric surfaces is suppressed. After formation of at least one gate spacer and source and drain regions, a planarization dielectric layer is deposited and planarized to physically expose a top surface of the disposable dielectric structure. The disposable dielectric structure is replaced with a replacement gate stack including a gate dielectric and a gate conductor portion. Lower external resistance can be provided without impacting the short channel performance of a field effect transistor device.

The invention discloses a semiconductor device and a manufacturing method thereof. The method comprises the following steps of providing a semiconductor substrate; forming an oxide layer on the semiconductor substrate; forming a grapheme layer on the oxide layer; forming a grid medium layer on the grapheme layer; forming a grid electrode on the grid medium layer; patterning the grid electrode; and forming a doping area in the substrate at two sides of the grid electrode. As the doping area is formed in the semiconductor substrate, and then a sensitive doping area is formed on the surface layer of the grapheme layer due to static induction, so as to form doping in the grapheme layer, thus, the decrease of the external resistance of the semiconductor device containing the grapheme layer can be facilitated.

The present invention relates to a Complementary Metal Oxide Semiconductor (CMOS) device having a lower external resistance and a method for manufacturing the CMOS device. The inventive MOSFET is produced by forming first suicide regions in a substrate as well as atop surface of a gate region and forming second silicide regions where second silicide thickness is greater than the first silicide thickness. The inventive method produces a low resistance first silicide in close proximity to the channel region of the device, where the incorporation of the first silicide decreases the external resistance of the device while the incorporation of the second silicide produces low sheet resistance interconnects.

The invention provides a pile body of an offshore wind power generator. The pile body comprises a main body and connecting pieces arranged at two ends of the main body; tensioning holes penetrating through the main body are axially formed in the main body; and the main body is made of concrete. The connecting pieces are arranged at two ends of the main body, so that the pile body is connected withother devices conveniently; and the tensioning holes penetrating through the main body can also be used for connecting the pile body with other devices and stabilizing the pile body. Besides, the main body is made of the concrete, compared with a pile body made of a steel material, the pile body has the advantage that the cost is greatly reduced, and thus the manufacturing cost is relatively low.In addition, the invention further provides a supporting column of the offshore wind power generator, a mounting method of the supporting column, a bearing platform and the offshore wind power generator.

The invention discloses an integrated assembly of a binary adjustable air inlet passage and an aircraft forebody. The integrated assembly comprises a first-stage fixed compression wedge surface, a second-stage adjustable compression wedge surface, a throat section, an expansion section, a lip mask, a driving motor, a connecting rod component and a side plate, the aircraft forebody comprises a first-stage bump, a second-stage bump, a transition molded surface and a strake wing. According to the integration method disclosed by the invention, the binary adjustable air inlet channel and the aircraft fuselage are highly fused, so that the external resistance of the aircraft is effectively reduced; the two-stage bulge molded surface of the fuselage not only can effectively eliminate the developed thick boundary layer of the fuselage, but also can decelerate and pressurize the supersonic airflow and improve the performance of the air inlet channel.

The invention provides an air purifier. The air purifier comprises a shell body, an air inducing device, a filtering device and a control device, wherein the shell body is provided with a suction inlet and a blowing outlet of air, the air inducing device sucks the air into the shell body from the suction inlet and blows the air out from the blowing outlet, the filtering device filters and purifiesthe air sucked into the shell body from the suction inlet, the filtering device comprises an inner filtering assembly and an outer filtering assembly, the inner filtering assembly is arranged on theshell body and completely covers the suction inlet, the outer filtering assembly is arranged on the shell body and located on the outer side of the inner filtering assembly, the outer filtering assembly comprises a movable filter screen capable of conducting collecting and winding, the control device controls the air inducing device and the filtering device at the same time, and when the dust accumulation amount of the filtering device is changed, the air inducing device is used for keeping the air amount of the blowing outlet stable. The air purifier has the advantages of being large in air outlet amount and stable in air outlet amount.

A preparation method of shuttle spokes that includes these steps: providing a forging die comprising of an upper die and a lower die with the upper die and lower die having a joint angle of the shuttle spoke structure and an arch radius as well as a gap between the upper die and the lower die; inserting the blank of a round spoke into the gap between the upper die and lower die for stamping; using a plurality of nip molding rollers to eliminate the burr at both ends of the shuttle spoke structure; and applying a plurality of straightening rollers to straightness adjustment of the curved spoke body so that when the wheel parts are rolling, less air vortex can minimize air resistance.

A semiconductor device having high output and a method of manufacturing the same are disclosed in which external resistance is reduced and radiating performance is improved. A MOSFET (70) comprises a plurality of inner leads electrically connected to a surface electrode of a semiconductor pellet having a field effect transistor on a principal surface thereof,

• • a connecting portion for electrically connecting the surface electrode of the semiconductor pellet and the inner leads, a resin encapsulant (29) formed by encapsulating the semiconductor pellet with resin, a plurality of outer leads (37), (38) protruding in parallel from the same lateral surface of the resin encapsulant (29) and a header (28) bonded to a back surface of the semiconductor pellet and having a header protruding portion (28c) protruding from a lateral surface of the resin encapsulant (29) opposite to the lateral surface from which the outer leads protrude, wherein the header (28) has an exposed surface (28b) exposed from the resin encapsulant (29); the outer leads (37), (38) are bent; and the exposed of the outer leads (37), (38) are provided at substantially the same height.

The invention discloses a self-adaptable spring stern door of an asphalt pavement milling machine. The self-adaptable spring stern door comprises a rack, a door plate, a guide groove, a spring and a sliding shaft, wherein the guide groove is fixedly formed in the lower side of one end of the rack; the door plate is arranged in the guide groove in a sliding manner; a guide sleeve is fixedly arranged on the upper side of the other end of the rack; the sliding shaft is arranged in the guide sleeve in a sliding manner; a limiting baffle block is fixedly arranged at the upper end of the sliding shaft; the spring sleeves the sliding shaft; the lower end of the sliding shaft is fixedly connected with one end of a fixed connection plate; and the other end of the fixed connection plate is fixedly connected with the door plate. The self-adaptable spring stern door has the characteristics of reasonable design, relatively low cost, good economical efficiency, constant stern door grounding pressure and high control reliability, does not relate to hydraulic and electric control systems, and can adapt within a small range; the operation efficiency and quality of the pavement milling machine can be improved; and the recovery rate of milled materials is improved.

The invention discloses a power grid data acquisition equipment management method, which comprises the following steps: during acquisition equipment management, old equipment in a management range, old team departments in the management range and old management modes in the management range need to be sorted; topographic conditions, equipment distribution and management difficulty points in a management range are sorted, and overall sorting is preferentially carried out, so that the scientific premise of equipment management is kept. According to the method, on the premise of keeping equipment management scientificity through overall carding, an updated optimization architecture and concentrated transparent multi-element management are executed, the main control excellent point is high in responsibility, problem responsibility pushing and delayed processing are reduced, a radiation type execution point has independent fault processing capacity, fault maintenance and elimination can be carried out while reporting is carried out, and the fault processing efficiency is improved. Maintenance normalization not only refers to maintenance of acquisition equipment, but also refers to continuous optimization and screening of management personnel, so that scientific advancement and timely fault handling are jointly kept.