87results about How to "Good strain" patented technology

A catheter assembly including a tapered steering spine having a varying stiffness along an axial length. The tapered steering spine is tailored to provide increasing flexibility from proximal to distal in a way that makes the bend radius more uniform along the length of the steering section. In one embodiment, the tapered steering spine includes structures on adjacent rings that engage with each other when the steering section is flexed to limit the minimum bend radius to a predetermined minimum and which enhances the torsional rigidity of the steering section regardless of the degree of flexure of the steering section. The limited bend radius can prevent excessive bending of components such as fiber optics. The enhanced torsional rigidity can negate the need for torque braid in the section of the catheter shaft that surrounds the tapered steering spine.

A device includes a semiconductor substrate, isolation regions in the semiconductor substrate, and a Fin Field-Effect Transistor (FinFET). The FinFET includes a channel region over the semiconductor substrate, a gate dielectric on a top surface and sidewalls of the channel region, a gate electrode over the gate dielectric, a source/drain region, and an additional semiconductor region between the source/drain region and the channel region. The channel region and the additional semiconductor region are formed of different semiconductor materials, and are at substantially level with each other.

A high-performance semiconductor structure and a method of fabricating such a structure are provided. The semiconductor structure includes at least one gate stack, e.g., FET, located on an upper surface of a semiconductor substrate. The structure further includes a first epitaxy semiconductor material that induces a strain upon a channel of the at least one gate stack. The first epitaxy semiconductor material is located at a footprint of the at least one gate stack substantially within a pair of recessed regions in the substrate which are present on opposite sides of the at least one gate stack. A diffused extension region is located within an upper surface of said first epitaxy semiconductor material in each of the recessed regions. The structure further includes a second epitaxy semiconductor material located on an upper surface of the diffused extension region. The second epitaxy semiconductor material has a higher dopant concentration than the first epitaxy semiconductor material.

A composition, preferably a halogen-free, flame retardant composition, comprising in weight percent based on the weight of the composition:

• • A. 1 to 90% TPU polymer,
  • B. 1 to 90% polyolefin polymer, preferably a polar polyolefin polymer,
  • C. 1 to 60% phosphorus-based, intumescent flame retardant,
  • D. 0.5 to 25% liquid phosphate modifier, e.g., bis-phenol-A-polyphosphate, and
  • E. Optional additives and/or fillers.

The compositions exhibit excellent strain and scratch whitening performance in combination with excellent burn performance, good flexibility and tensile properties, and good fabrication extrusion characteristics including improved surface smoothness.

A method and apparatus is provided for forming an electronic assembly whereby an insulating polymer matrix having a plurality of conductor holes is attached to a first substrate wherein the conductor holes align with a corresponding contact array on the first substrate. Subsequently, a flexible, electrically conductive adhesive is provided within the plurality of conductor holes and a solid conductive material, preferably having a high melting temperature, is attached to at least one end thereof. The insulating polymer matrix with the electrically conductive adhesive and the solid conductive material is then cured at a temperature sufficient to completely cure the matrix to completely surround the electrically conductive adhesive, as well as permanently attaching the matrix and conductive adhesive to the first substrate and permanently attaching the solid conductive material to the conductive adhesive. A second substrate may then be attached to the conductive matrix structure secured to the first substrate by providing a low melting temperature attachment means to the solid conductive material attached to the matrix and subsequently reflowing the assembly to form an electronic assembly adapted with the capability of reworkability.

The control of an apparatus within a grain holding device for feeding grain to an unloader conveyor operable for conveying the grain from the holding device, includes sensing a predetermined condition or conditions representative of capacity of the unloader conveyor for receiving grain, and adaptively controlling the apparatus for feeding grain to the unloader conveyor in advantageous varying manners responsive to the conditions, including to delay initiation of feeding until the receiving capacity is increased, and to match the grain feed to the capacity. The automatic control can be overridden, to allow user control of unloader speed, and can be configured to allow cleanout of the unloader conveyor.

A structure for supporting electric power transmission lines that aims to obtain a better stress and strain behaviour providing a higher ultimate economy. The preferred embodiment is directed to a structure that comprises a metallic vertical structure (101) having: a lower tubular frustum shape (103) with a smaller end (104) and a larger end (105), wherein the smaller end is on the bottom and the larger end on the top; an upper frustum shape (106) with a smaller end (107) and a larger end (108), wherein the smaller end is on the top and the larger end on the bottom; and wherein the larger end of the lower frustum is adjoined to the larger end of the upper frustum; line supporting members (109); side supporting elements (110) attached in the adjoining region (111) of the lower and upper frustums, and extending between the attachment and an anchoring base (113); and wherein the adjoining region is below the line supporting members.

A telescopic scope and ring mounts incorporating a novel feature for locking the ring mounts to the scope to prevent canting and scope drift for secure and easy mounting on a gun.

A holding device for sealed insertion of cables (18) through enclosure walls, having a holding plate with several cable lead-through openings (13), which can be mounted on the enclosure wall also having cable lead-through openings, and an elastic sealing plate (11), which in the mounted state is located between the holding plate (10) and the enclosure wall. The sealing plate (11) has pre-manufactured cable perforation points (14) in true alignment with the cable lead-through openings (13). Furthermore, the holding plate has flexible holding tabs (15) extending sideways into the cable lead-through openings (13), and each of the tabs is deflected toward the enclosure wall if a cable (18) is inserted into the appropriate cable opening (13) and, if tensile strain is placed upon the cable (18), digs into the cable in the opposite direction, whereby the deflection toward the wall remains. With this holding device, cables (18) with different cross-sections can be held in the same cable openings (13), and simple unfastening for pulling out the cable is also possible.

A method for manufacturing a barbed stent includes providing a sheet of stent material, cutting the sheet to form a stent wire with integral barbs extending therefrom, and forming the stent wire into a final stent shape having a longitudinal axis. A stent for deployment within the body of a patient includes integral barbs.

A fibre optic accelerometer particularly intended for use with an interferometer using the compliant cylinder approach but further providing a seismic mass at the core of the cylinder resulting in improved sensitivity and rejection of out-of-axis inputs.

The invention provides a (Li, Na, K)(Nb, Ta)O₃ type piezoelectric/electrostrictive ceramic composition capable of being sintered at a low temperature and providing good electric field-induced strain at the time of high electric field application at a temperature for practical use. The piezoelectric/electrostrictive ceramic composition has an ABO₃ type composition formula wherein lithium, sodium, and potassium are contained as first elements; niobium and tantalum are contained as second elements; oxygen (O) is contained as a third element; A/B ratio is higher than 1; and the ratio of the number of Ta atoms to the total number of atoms of the second elements is 10 mol % or more and 50 mol % or less, and comprises a perovskite type oxide wherein the first elements are A site composing elements and the second elements are B site composing elements.

The present invention provides a method of generating a fingerprint for a gemstone (5), for example a diamond, using x-ray imaging. The fingerprint comprises a three-dimensional map of a crystal or crystals present within the gemstone (5) including internal imperfections of the crystals and may also comprise further information about the gemstone (5). The method comprising the steps of: mounting the gemstone (5) in a sample holder (4) of an imaging apparatus, the imaging apparatus comprising a detector (6), a sample holder (4) mounted on a sample stage (3), an x-ray source (1), the sample holder (4) and the x-ray source (1) aligned along an optical axis, wherein the sample holder (4) is movable relative to the at least one x-ray source (1) and the detector (6); exposing the gemstone (5) to x-ray radiation from the x-ray source (1), whilst moving the sample holder (4) according to a search strategy that is predetermined for the gemstone (5) based on known physical characteristics of the gemstone (5); using the detector (6) to locate diffraction and/or extinction spots generated by the lattice of the crystals; utilising the located diffraction and/or extinction spots to calculate information about the position, orientation, and phase of the crystals; generating a suitable x-ray diffraction scanning strategy from the calculated information, the strategy including moving the sample holder (4) relative to the x-ray source (1) and the detector (6) and exposing the gemstone (5) to appropriate x-ray radiation as the sample holder (4) is moved, wherein the strategy is generated to locate and classify internal imperfections in the at least one crystal; scanning the gemstone according to the scanning strategy and recording the diffraction and/or extinction images using the detector (6); and generating a fingerprint from the recorded diffraction and/or extinction images.

A clot capture catheter comprises an elongate tubular shaft having a proximal end, a distal end and an inflatable expansile member at the distal end. The expansile member is inflatable from a collapsed delivery configuration to an expanded configuration. In the expanded configuration, the expansile member extends to define a funnel shape having an enlarged distal clot entry mouth at the distal-most end of the catheter. In the expanded configuration, the expansile member may extend distally beyond the distalmost tip of the shaft. The expansile member may be integral with the distal tip of the catheter shaft.

A modifier for a polylactic acid comprising a block polymer (C) having a polymer block (A) satisfying relationship (i)

7.80≦σ/ρ<8.54

wherein σ represents a solubility parameter value of a polymer block; and ρ represents a density value of a polymer block, and a polymer block (B) satisfying relationship (2):

8.54≦σ/ρ<9.20

wherein σ and ρ have the same meanings as described above, wherein each of the aforementioned polymer block (A) and the aforementioned polymer block (B) is independently a polymer block selected from the group consisting of a polyester block, a polyether block, and a polyhydroxycarboxylic acid block, and said block polymer (C) has a glass transition temperature of 0° C. or lower, can enhance impact resistance, flexibility, and tensile strain, while biodegradability of the polylactic acids and thermal resistance are maintained, and in addition, is free from bleed-out from the moldings formed from a polylactic acid composition.

When incorporating a strain-inducing semiconductor alloy in one type of sophisticated transistors, the removal of sacrificial cap materials, such as a spacer layer, sacrificial spacer elements and dielectric cap materials, may be accomplished by using, at least in a first phase of the removal process, an efficient etch stop liner material, which may thus reduce the material loss in the drain and source extension regions that are formed prior to the deposition of the strain-inducing semiconductor material. Moreover, the drain and source extension regions of the other type of transistor may be formed with superior process uniformity due to a reduced material erosion of the corresponding spacer elements.

Disclosed are methods of forming field effect transistor(s) (FET) and the resulting structures. Instead of forming the FET source/drain (S/D) regions during front end of the line (FEOL) processing, they are formed during middle of the line (MOL) processing through metal plug openings in an interlayer dielectric (ILD) layer. Processes used to form the S/D regions through the metal plug openings include S/D trench formation, epitaxial semiconductor material deposition, S/D dopant implantation and S/D dopant activation, followed by silicide and metal plug formation. Since the post-MOL processing thermal budget is low, the methods ensure reduced S/D dopant deactivation, reduced S/D strain reduction, and reduced S/D dopant diffusion and, thus, enable reduced S/D resistance, optimal strain engineering, and flexible junction control, respectively. Since the S/D regions are formed through the metal plug openings, the methods eliminate overlay errors that can lead to uncontacted or partially contacted S/D regions.

A microlattice structure may be used for a variety of different applications with a protective helmet assembly. The three-dimensional microlattice layer comprising a plurality of interconnected filaments extending along at least three different directions from a plurality of nodes. The microlattice layer may further comprise at least one material layer extending laterally between and interconnecting at least two or more nodes. The at least one material layer may be configured to transversely and rotationally constrain the nodes to increase the overall compressive strength and stiffness of the microlattice structure. The at least one material layer may comprise a single, continuous layer and/or a plurality of material layer segments. The microlattice layer may comprise a single, continuous layer or a plurality of microlattice layer segments. The microlattice layer may be stacked, the stacked microlattice layers may further comprise one or more material layers and/or one or more impact mitigation layers.

Disclosed are a polysiloxane-modified polylactic acid resin, composition using same, molded article, and production method, whereby it is possible to produce a molded article via a simple method, and where said article may be used in applications demanding a high level of impact resistance as an alternative to ABS resin or the like, has a similar level of impact resistance as said substances, has superior flexibility with respect to rupture bending strain and tensile breaking strain, and has bleed resistance. The polysiloxane-modified polylactic acid resin has a segment which is a polylactic acid compound, and a segment which is an amino polysiloxane compound which has an amine group. With respect to the amino poly-siloxane compound, amine groups are on average contained in the range of 0.01 to 2.5% inclusive by mass, and with respect to the polylactic acid compound, are on average contained in the range of 3 to 300 ppm inclusive by mass.