Passivation contact N-type solar cell and manufacturing method, component and system

Abstract

The invention relates to a passivation contact N-type solar cell and a manufacturing method, a component and a system. The passivation contact N-type solar cell comprises an N-type crystalline siliconsubstrate. A front surface successively comprises a p+ doped area, a front surface passivation anti-reflection film, a front surface main grid and an auxiliary grid from inside to outside. A back surface successively comprises a tunneling oxide layer, an n+ doped polysilicon layer, a back surface passivation film and a back surface electrode from inside to outside. The back surface electrode andthe n+ doped polysilicon layer form ohmic contact. A front surface auxiliary grid is aluminum which forms ohmic contact with the p+ doped area. The cell has advantages that the front surface auxiliarygrid is aluminum, the aluminum can directly burn through SiNx and a recombination rate with silicon is low, grooving is not needed, a silver paste is saved and an open-circuit voltage is high; the n+doped polysilicon layer is taken as a back surface field of the N-type solar cell, and an excellent field passivation effect is provided for a silicon substrate surface; and a recombination rate of minority carriers is low, and a cell open-circuit voltage, a short circuit current and energy conversion efficiency are high.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a passivated contact N-type solar cell, a preparation method, an assembly and a system. Background technique [0002] With the continuous development of photovoltaic technology, photovoltaic cells with high efficiency, high stability and low cost will become the mainstream products pursued by the photovoltaic market. Many factors will affect the photoelectric conversion efficiency of photovoltaic cells, among which the passivation quality of the silicon substrate surface is an extremely critical factor. The passivation quality is good, and the surface recombination rate of the silicon substrate is low, so that higher open circuit voltage and short circuit current can be obtained. Common N-type solar cells in the industry have high conversion efficiency, low light-induced attenuation, good stability, and high cost performance. They also have the advantages of double-sided pow...

AI Technical Summary

Problems solved by technology

However, the silver content in aluminum-doped silver paste is relatively high, and its cost is comparable to that of pure silver paste

[0005] At present, there is no effective metallization method for the p+-type doped surface, which can greatly reduce the use of silver-containing paste while satisfying low-ohmic contact resistance and excellent solderability

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