Nanocrystal electroluminescence device and fabrication method thereof

a technology of electroluminescence device and nanocrystal, which is applied in the direction of luminescent composition, thermoelectric device, chemistry apparatus and processes, etc., can solve the problems of low color purity, difficult control of nanocrystal layer thickness and hole transport layer, etc., and achieve the effect of increasing the color purity of the electroluminescence devi

Inactive Publication Date: 2005-12-15
SAMSUNG ELECTRONICS CO LTD
View PDF10 Cites 69 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0012] Therefore, the present invention has been made in view of the above problems of the related art, and it is an object of the present invention to provide an electroluminescence device comprising a polymer hole transport layer, a nanocrystal light-emitting layer and an organic electron transport layer wherein the nanocrystal light-emitting layer is independently and separately formed between the polymer hole transport layer and the organic electron transport layer, thereby providing a pure nanocrystal luminescence spectrum and increasing the color purity of the electroluminescence device.

Problems solved by technology

If a polymer is used as the hole transporting material, its solubility is low and thus the polymer is limited to material which can be dissolved in solvents which dissolve the nanocrystal.
Although the polymer which can be dissolved are used, the solubility of the polymer is not sufficiently high, rendering it difficult to control the thickness of the nanocrystal layer and the hole transport layer.
However, since none of these conventional electroluminescence devices provide a pure nanocrystal luminescence spectrum, they have a problem of low color purity.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nanocrystal electroluminescence device and fabrication method thereof
  • Nanocrystal electroluminescence device and fabrication method thereof
  • Nanocrystal electroluminescence device and fabrication method thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

Fabrication of Electroluminescence Device Employing CdSeS Nanocrystal Light-emitting Layer Dispersed in Octane

[0055] This example shows the fabrication of an electroluminescence device wherein a nanocrystal light-emitting layer is independently and separately formed. First, an ITO-patterned glass substrate was sequentially washed with a neutral detergent, deionized water, water and isopropyl alcohol, and was then subjected to UV-ozone treatment. A solution of 1 wt % of poly(9,9′-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine (TFB) in chlorobenzene was spin-coated on the ITO-patterned substrate to a thickness of about 50 nm, and then baked at 180° C. for 10 minutes to form a hole transport layer. A dispersion of the CdSeS nanocrystals (1 wt %) prepared in Preparative Example 1 in octane was spin-coated on the hole transport layer, and dried to form a nanocrystal light-emitting layer having a thickness of about 5 nm. At this time, the octane used herein is a solvent which does not...

example 2

Fabrication of Electroluminescence Device Employing CdSeS Nanocrystal Light-emitting Layer Dispersed in Chlorobenzene

[0058] First, an ITO-pattemed glass substrate was sequentially washed with a neutral detergent, deionized water, water and isopropyl alcohol, and was then subjected to UV-ozone treatment. A solution of 1 wt % of poly(9,9′-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine (TFB) in chlorobenzene was spin-coated on the ITO-patterned substrate to a thickness of about 50 nm, and then baked at 180° C. for 10 minutes to form a hole transport layer. A dispersion of 1 wt % of the CdSeS nanocrystals prepared in Preparative Example 1 in chlorobenzene was spin-coated on the hole transport layer, and dried to form a nanocrystal light-emitting layer having a thickness of about 5 nm. At this time, the chlorobenzene used herein is a solvent which does not dissolve the hole transport layer.

[0059] (3-4-Biphenyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (TAZ) was deposited on th...

example 3

Fabrication of Electroluminescence Device Employing CdSe / ZnS Nanocrystal Light-emitting Layer Dispersed in Octane and Including No Hole Blocking Layer

[0061] First, an ITO-pattemed glass substrate was sequentially washed with a neutral detergent, deionized water, water and isopropyl alcohol, and was then subjected to UV-ozone treatment. A solution of 1 wt % of poly(9,9′-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine (TFB) in chlorobenzene was spin-coated on the ITO-patterned substrate to a thickness of about 50 nm, and then baked at 180° C. for 10 minutes to form a hole transport layer. A dispersion of the CdSe / ZnS nanocrystals (1 wt %) prepared in Preparative Example 2 in octane was spin-coated on the hole transport layer, and dried to form a nanocrystal light-emitting layer having a thickness of about 5 nm. At this time, the octane used herein is a solvent which does not dissolve the hole transport layer.

[0062] Tris(8-hydroxyquinoline)-aluminum (Alq3) was deposited on the comp...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

A nanocrystal electroluminescence device comprising a polymer hole transport layer, a nanocrystal light-emitting layer and an organic electron transport layer wherein the nanocrystal light-emitting layer is independently and separately formed between the polymer hole transport layer and the organic electron transport layer. According to the nanocrystal electroluminescence device, since the hole transport layer, the nanocrystal light-emitting layer and the electron transport layer are completely separated from one another, the electroluminescence device provides a pure nanocrystal luminescence spectrum having limited luminescence from other organic layers and substantially no influence by operational conditions, such as voltage. Further, a method for fabricating the nanocrystal electroluminescence device.

Description

BACKGROUND OF THE INVENTION [0001] This non-provisional application claims priority under 35 U.S.C. 119(a) on Korean Patent Application No. 42200 filed on Jun. 9, 2004 which is herein expressly incorporated by reference. [0002] 1. Field of the Invention [0003] The present invention relates to an electroluminescence device, and a method for fabricating the electroluminescence device. More particularly, the present invention relates to a nanocrystal electroluminescence device comprising a polymer hole transport layer, a nanocrystal light-emitting layer and an organic electron transport layer wherein the nanocrystal light-emitting layer is independently and separately formed between the polymer hole transport layer and the organic electron transport layer, and a method for fabricating the nanocrystal electroluminescence device. [0004] 2. Description of the Related Art [0005] A nanocrystal is defined as a material having a crystal structure at the nanometer-scale level, and consists of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(United States)
IPC IPC(8): B82Y20/00H05B33/14C09K11/06C09K11/08C09K11/56C09K11/58C09K11/60C09K11/62C09K11/66C09K11/68C09K11/70C09K11/87C09K11/88C09K11/89H01L51/50H05B33/10H05B33/22
CPCB82Y20/00C09K11/08H01L33/08H01L33/24H01L51/5048H05B33/14Y10S977/779H10K50/115H10K50/14C09K11/06B82B3/00
Inventor JANG, EUN JOOJUN, SHIN AELEE, SUNG HUNAHN, TAE KYUNGCHOI, SEONG JAE
Owner SAMSUNG ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap