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A ga2o3/(ga1-xfex)2o3 thin film with room temperature ferromagnetism and high ultraviolet light transmission and its preparation method

A room temperature ferromagnetism and ultraviolet light technology, applied in the manufacture/processing of electromagnetic devices, material selection, etc., to achieve the effect of simple and common equipment, which is conducive to popularization

Active Publication Date: 2018-09-14
北京镓创科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is not difficult to find that so far, experimentally using high-energy photons to control electron spin has hardly been reported.

Method used

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  • A ga2o3/(ga1-xfex)2o3 thin film with room temperature ferromagnetism and high ultraviolet light transmission and its preparation method
  • A ga2o3/(ga1-xfex)2o3 thin film with room temperature ferromagnetism and high ultraviolet light transmission and its preparation method
  • A ga2o3/(ga1-xfex)2o3 thin film with room temperature ferromagnetism and high ultraviolet light transmission and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Example 1 Growth of Ga 2 o 3 / Fe(50) multilayer film

[0021] The specific steps are as follows: (1) Using the c-plane sapphire as the substrate, soak the substrate in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 Air dry, stand-by; (2) with 99.99% pure Ga 2 o 3 Ceramics and 99.99% pure metal Fe are used as targets, and Ga 2 o 3 and the Fe metal target are placed on the target platform of the laser molecular beam epitaxy system, and the sapphire substrate processed in step (1) is fixed on the sample holder and put into the vacuum chamber; (3) the chamber is evacuated, and the substrate is heated. bottom, first grow Ga on the c-plane of the sapphire substrate 2 o 3 Thin film, then rotate the orbiting target to the metal Fe target, deposit Fe thin film, switch the target by continuously rotating the orbiting target, and continue to alternately and repeatedly deposit Ga ...

Embodiment 2

[0024] Example 2 Growth of Ga 2 o 3 / Fe(20) multilayer film

[0025] Steps (1) and (2) are all the same as in Example 1. The number of laser pulses for depositing Fe thin film in step (3) is 20 times. The test results are all similar to Example 1.

Embodiment 3

[0026] Example 3 Growth of Ga 2 o 3 / Fe(0) film

[0027] Steps (1) and (2) are all the same as in Example 1. Deposit Ga in step (3) 2 o 3 The number of laser pulses for the thin film was 2000 times. Among them, the working air pressure is 1×10 -6 Pa, substrate temperature 900°C, target base distance 5cm, laser energy 5J / cm 2 , the laser frequency is 1 Hz; after the growth is completed, anneal in situ at 900 ° C for 30 minutes to obtain Ga 2 o 3 / Fe(0) multilayer film.

[0028] Figure 5 Ga 2 o 3 X-ray diffraction pattern (N=0,10,20,30,40,50,100) of / Fe(N) multilayer film, find out from the figure, except sample Ga 2 o 3 / Fe(100), only found crystal plane family, indicating that all samples are β-phase Ga preferentially grown along the (201) crystal plane 2 o 3 film. It can be seen from the enlarged figure of Fig. 5(b) that Ga 2 o 3 / Fe(10), Ga 2 o 3 / Fe(20), Ga 2 o 3 / Fe(30), Ga 2 o 3 / Fe(40), Ga 2 o 3 Corresponding to / Fe(50) The diffraction peak...

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PUM

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Abstract

The invention discloses a Ga2O3 / (Ga1-xFex)2O3 thin film with room temperature ferromagnetism and high ultraviolet light transmission and a preparation method thereof. The thin film exhibits room temperature ferromagnetism and has high transmittance in the deep ultraviolet region. Can pass through high-energy photons. The film can be used to study the interaction of high-energy photons with electron spins. The specific preparation method of the thin film is to use c-plane sapphire as the substrate, deposit Ga2O3 thin layer and transition metal Fe thin layer through multiple cycles of laser molecular beam epitaxy, and realize Ga2O3 doped with transition metal elements by interdiffusion between high-temperature layers. / (Ga1‑xFex)2O3 multilayer films. The method for preparing Ga2O3 / (Ga1-xFex)2O3 multilayer films provided by the present invention can realize different Fe-doped (Ga1-xFex)2O3 films by adjusting the number of laser pulses for depositing Fe layers, and the whole process is performed at the same time. The purity of the sample is guaranteed by being carried out in one chamber, and the equipment used is simple and common, which is very conducive to popularization. The Ga2O3 / (Ga1‑xFex)2O3 film prepared by the invention is a very promising dilute magnetic semiconductor material.

Description

technical field [0001] The invention belongs to the technical field of dilute magnetic semiconductor thin films, in particular to a Ga 2 o 3 / (Ga 1-x Fe x ) 2 o 3 Thin films and methods for their preparation. technical background [0002] Spintronics based on semiconductors is considered to be the mainstream direction of future development, and one of the important ways is to construct a new type of material - dilute magnetic semiconductor. People dope and introduce magnetic ions such as transition metals (or rare earth metals) into semiconductors, and through the spin exchange between magnetic ions and electrons in the semiconductor conduction band and the spin exchange between transition metal ions, this type of material has Magnetic, this kind of material that generates magnetism by partially replacing non-magnetic ions is a dilute magnetic semiconductor. Diluted magnetic semiconductor materials utilize the charge properties and spin properties of electrons at the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/10H01L43/12
CPCH10N50/85H10N50/01
Inventor 郭道友闫汇王顺利李培刚唐为华沈静琴
Owner 北京镓创科技有限公司
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