A vanadium adulterated TiOx nano lanthanon magnetic semiconductor and its making method

A dilute magnetic semiconductor and titanium oxide technology, which is applied in the manufacture of titanium dioxide, titanium oxide/hydroxide, inductors/transformers/magnets, etc., can solve the problem of vanadium-doped titanium oxide nano-dilute magnetic semiconductor without powder, etc., to achieve Ease of popularization, cheap equipment, and simple operation

Inactive Publication Date: 2008-05-28
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the problem that the existing vanadium-doped titanium oxide nano-dilute magnetic semiconductor has no powder, a vanadium-doped titanium oxide nano-dilute magnetic semiconductor and its preparation method are provided. The vanadium-doped titanium oxide nano-dilute magnetic semiconductor prepared by the method is Magnetic semiconductors are in powder form and can exhibit room temperature ferromagnetism

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  • A vanadium adulterated TiOx nano lanthanon magnetic semiconductor and its making method
  • A vanadium adulterated TiOx nano lanthanon magnetic semiconductor and its making method
  • A vanadium adulterated TiOx nano lanthanon magnetic semiconductor and its making method

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Embodiment 1

[0020] Utilize the method of the present invention, prepare the Ti of 500 ℃ annealing treatment 1-x V x o 2 (x=0.08) Nanopowder. First, weigh 0.01 mol of ammonium metavanadate and put it into a 100mL beaker, add 30mL of glacial acetic acid, dissolve it under ultrasonic dispersion, wash the beaker continuously with absolute ethanol, transfer the solution into a 100mL volumetric flask, add absolute ethanol to adjust When the concentration reaches 0.05mol / L, prepare a precursor solution of vanadium ions; in addition, dissolve tetrabutyl titanate in absolute ethanol, transfer the solution into a 100mL volumetric flask, and prepare a precursor solution of 0.5M titanium ions. In the second step, use a 10mL graduated pipette to take 40mL of the solution containing titanium ions and place it in a 100mL beaker, then use a 2mL graduated pipette to take 3.5mL of the solution containing vanadium ions, and quickly drop it into the above solution while stirring continuously. The molar ra...

Embodiment 2

[0022] Utilize the method of the present invention, prepare the Ti of 500 ℃ annealing treatment 1-x V x o 2 (x=0.04) Nanopowder. First, weigh 0.01 mol of ammonium metavanadate and put it into a 100mL beaker, add 30mL of glacial acetic acid, dissolve it under ultrasonic dispersion, wash the beaker continuously with absolute ethanol, transfer the solution into a 100mL volumetric flask, add absolute ethanol to adjust When the concentration reaches 0.05mol / L, prepare a precursor solution of vanadium ions; in addition, dissolve tetrabutyl titanate in absolute ethanol, transfer the solution into a 100mL volumetric flask, and prepare a precursor solution of 0.5M titanium ions. In the second step, use a 10mL graduated pipette to take 40mL of the precursor solution containing titanium ions and place it in a 100mL beaker, then use a 2mL graduated pipette to take 1.7mL of the precursor solution of vanadium ions, and quickly drop it into the above solution while stirring continuously ,...

Embodiment 3

[0024] Utilize the method of the present invention, prepare the Ti of 600 ℃ annealing treatment 1-x V x o 2 (x=0.04) of nanopowder. First, weigh 0.01 mol of ammonium metavanadate and put it into a 100mL beaker, add 30mL of glacial acetic acid, dissolve it under ultrasonic dispersion, wash the beaker continuously with absolute ethanol, transfer the solution into a 100mL volumetric flask, add absolute ethanol to adjust When the concentration reaches 0.75mol / L, prepare a precursor solution of vanadium ions; in addition, dissolve tetrabutyl titanate in absolute ethanol, transfer the solution into a 100mL volumetric flask, and prepare a precursor solution of 0.5M titanium ions. In the second step, use a 10mL graduated pipette to take 40mL of the precursor solution of titanium ions and place it in a 100mL beaker, then use a 2mL graduated pipette to take 1.7mL of the precursor solution of vanadium ions, and quickly drop it into the above solution while stirring continuously. The m...

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Abstract

The invention relates to a vanadium doped titania nanometer dilute magnetic semiconductor and a preparation method thereof, wherein, the reparation method includes the steps that: A, the predecessor body solution of vanadium ion and the predecessor body solution of titanium ion are prepared; B, the two solutions are mixed to form sol; C, the sol is aged under room temperature to form wet gel, and the wet gel is dried in an oven until dry gel is formed; D, the dry gel is skived to obtain dry gel powder, and the dry gel powder removes organic matter through heat treatment in atmosphere; the dry gel powder annealings in inert atmosphere to be made into the nanometer powder of the vanadium doped titania dilute magnetic semiconductor. The vanadium doped titania nanometer dilute magnetic semiconductor made by the method of the invention forms a power shape, and can show the room temperature ferromagnetism.

Description

technical field [0001] The invention belongs to the field of novel semiconductor spintronics materials, and in particular relates to a transition metal-doped titanium oxide nanometer dilute magnetic semiconductor and a preparation method thereof. technical background [0002] The development of information technology is inseparable from advanced electronics, optoelectronics and magnetic storage devices. Traditional semiconductor devices utilize the charge properties of electrons, and magnetic memory devices utilize the spin properties of electrons. The development of spintronic devices that utilize both the charge and spin properties of electrons has become a research hotspot in this field. Diluted magnetic semiconductors can use the charge and spin properties of electrons at the same time, and have excellent magnetic, magneto-optical and magnetoelectric properties. They can be used to develop a new generation of spintronic and nanoelectronic devices, expanding the developme...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F1/40H01F41/00C01G23/053B22F9/16
Inventor 袁松柳田召明王永强何惊华
Owner HUAZHONG UNIV OF SCI & TECH
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