Method for preparing copper-doped aluminum nitride base diluted magnetic semiconductor nano rods

A dilute magnetic semiconductor, aluminum nitride-based technology, applied in nanostructure manufacturing, nanotechnology, nanotechnology and other directions, to achieve broad application prospects, low equipment requirements, and simple processes

Inactive Publication Date: 2010-11-17
SOUTH CHINA UNIV OF TECH
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It has been reported that good ferromagnetism can be obtained by doping magnetic ions in AlN, but most of the studies on the doping of non-magnetic ions Cu metal in AlN structure are still in the stage of theoretical calculation.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing copper-doped aluminum nitride base diluted magnetic semiconductor nano rods
  • Method for preparing copper-doped aluminum nitride base diluted magnetic semiconductor nano rods
  • Method for preparing copper-doped aluminum nitride base diluted magnetic semiconductor nano rods

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] (1) AlCl 3 with CuCl 2 mix;

[0023] (2) Place the crucible and the silicon substrate containing the mixture in the quartz tube, close the quartz tube, push the quartz tube into the furnace so that the crucible is not heated, and vacuumize;

[0024] (3) Control the temperature of the furnace to rise to 900-950°C within half an hour, and at the same time feed nitrogen gas with a flow rate of 100 sccm; then push the quartz tube further into the furnace to heat the mixture and the silicon substrate, keeping the flow rate of nitrogen gas constant, Inject ammonia gas for 30 minutes, with a flow rate of 20 sccm; then reduce the flow rate of ammonia gas to 5 sccm, and pass it for 30 minutes to obtain copper-doped aluminum nitride-based dilute magnetic semiconductor nanorods.

[0025] 1) Cut the Si sheet into strips with a width of 1 cm, ultrasonically clean it with acetone and alcohol, and dry it with nitrogen gas for later use;

[0026] 2) AlCl 3 powder with CuCl 2 Put t...

Embodiment 2

[0036] 1) Cut the Si sheet into strips with a width of 1 cm, ultrasonically clean it with acetone and alcohol, and then dry it with nitrogen to obtain a Si substrate;

[0037] 2) High-purity AlCl 3 powder with CuCl 2 The powders are physically mixed in a ratio of 9.5:1 according to the molar ratio;

[0038] 3) put the mixed powder into an alumina crucible, and place it in a quartz tube with two ends open, a diameter of 60mm, and a length of 1 meter;

[0039] 4) Place the prepared Si substrate in the quartz tube; the distance between the crucible and the silicon substrate is 8cm;

[0040] 5) Push the quartz tube into the horizontal tubular atmosphere furnace to keep the source end from being heated;

[0041] 6) Close the quartz tube, evacuate to 0.1Pa, and then flush into nitrogen for cleaning;

[0042] 7) Introduce 100 sccm nitrogen gas from one end of the reaction source as the carrier gas, and set the temperature rise program so that the system rises to 950°C within half...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses copper-doped aluminum nitride base diluted magnetic semiconductor nano rods and a preparation method thereof. The preparation method comprises the following steps of: mixing aluminum chloride and copper chloride uniformly in a certain molar ratio; and then performing ammoniation on the mixture in an ammonia atmosphere to obtain the Cu-doped aluminum nitride directly. The copper-doped aluminum nitride base diluted magnetic semiconductor nano rod has the advantages of simple method, low equipment requirement, high ferromagnetism of the prepared AIN:Cu, a Curie temperature higher than the room temperature, and good application prospect, and can be applied for nano spintronics devices, such as a spin field effect tube (spin-FET), a spin light-emitting diode (spin-LED) and the like.

Description

technical field [0001] The invention relates to an aluminum nitride-based dilute magnetic semiconductor nanorod doped with non-magnetic metal ions and a preparation method thereof, in particular to a method for preparing a copper-doped aluminum nitride-based dilute magnetic semiconductor nanorod. Background technique [0002] Diluted magnetic semiconductors have attracted extensive interest since the discovery of carrier-induced ferromagnetism in (Ga,Mn)As. As a new generation of spintronics materials, dilute magnetic semiconductors introduce a new degree of freedom of spin on the basis of traditional semiconductors. Therefore, it may generate a new concept of electronic devices, which has a good prospect of commercial application. However, from the perspective of industrial applications, only dilute magnetic semiconductors with a higher Curie temperature are widely used. In order to find dilute magnetic semiconductor materials with high Curie temperature available at room...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01F1/40B82B3/00
Inventor 季小红凌志远
Owner SOUTH CHINA UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap