6 results about "Cu doping" patented technology

The invention relates to the technical field of thermoelectric materials, in particular to a Bi2SeS2-based thermoelectric material and a preparation method and application thereof, the Bi2SeS2-based thermoelectric material takes Bi2SeS2 as a matrix, and the matrix is doped with a copper element and silicon carbide as a nano composite phase. According to the invention, the electric transport performance and the heat transport performance of the material are synchronously optimized through a synergistic strategy of Cu doping and SiC nano-compounding; cu doping effectively improves the carrier concentration and conductivity, SiC nano-compounding introduces a large number of nano-interfaces, the SiC nano-compounding and the point defects generated by Cu doping jointly construct a point defect-nano-interface multi-scale phonon scattering mechanism, and the lattice thermal conductivity is remarkably reduced. Moreover, the process for preparing the Bi2SeS2-based thermoelectric material is simple, the cost is low, the thermoelectricity of the Bi2SeS3 material at 773 K is successfully improved to 0.83, and a reliable way is provided for industrial application of the Bi2SeS2-based thermoelectric material.

This invention relates to a highly stable layered oxide sodium-ion battery cathode active material and its preparation method. The chemical formula of the cathode active material is K. x Na y Cu α Ni β Mn 0.6 In the chemical formula O2, x represents the K doping amount; α represents the Cu doping amount; and β represents the Ni doping amount, where 0 ≤ x ≤ 0.35, 0.32 ≤ y ≤ 0.67, 0 ≤ α ≤ 0.4, 0 ≤ β ≤ 0.4, and x + y = 0.67, α + β = 0.4; the positive electrode active material exhibits a layered stacked morphology. This invention employs a novel bi-site substitution strategy, namely, large-radius K... + Riveted to prismatic Na + Position, Cu 2+ Occupied in transition metal sites; large radius K + Occupy Na + The presence of these sites results in larger interlayer spacing, providing more sodium ion storage sites and faster ion transport channels. Furthermore, K... + The larger interlayer spacing resulting from doping corresponds to a multilayered, oriented stacking of nanosheets in the microstructure, which is beneficial for sodium ion transport. This invention possesses high Cu content. 2+ / Cu 3+ Cu substitution with a high redox potential improves the stability of the material when exposed to air and water.

The invention discloses a preparation method of a P2 type layered sodium ion positive electrode material based on Cu doping and MgO surface coating, and the preparation method comprises the following steps: (1) weighing raw materials according to a stoichiometric formula Na < 0.67 > Ni < 0.33-x > Cu < x > Mn < 0.67 > O < 2 >, and respectively dispersing the raw materials into distilled water, (2) sequentially and uniformly dispersing the dispersed solutions into an aqueous solution of citric acid, stirring in a microwave reactor, heating at the temperature of 100-110 DEG C until the solvent is completely evaporated to form green gel, grinding the gel into powder, pre-sintering at the temperature of 500-510 DEG C, taking out, uniformly grinding again, and roasting at the temperature of 950-1000 DEG C to obtain a roasted product; and (3) adding a C4H6MgO4. 4H2O solution into the roasted product suspension, stirring at the temperature of 80-90 DEG C until the solvent is completely evaporated, and roasting the powder at the temperature of 550-600 DEG C to obtain the product Na < 0.67 > Ni < 0.33-x > Cu < x > Mn < 0.67 > O < 2 > (at) y MgO. The structural stability, the interface stability and the dynamic performance of the material under a high-voltage condition are improved through a dual modification strategy of combining partial replacement of crystal lattices by copper ions (Cu < 2 + >) and surface coating of magnesium oxide (MgO).

The invention discloses a preparation method of a Fe and Cu ion double-doped V2O5 electrochromic film. The method comprises the following steps: firstly, putting V2O5 into a proper amount of deionized water, and carrying out ultrasonic dispersion and magnetic stirring to obtain a homogeneous V2O5 solution; then FeCl3 and CuCl2 are added to serve as a Fe source and a Cu source respectively, a proper amount of povidone is introduced to serve as an auxiliary solvent, and heating, stirring and aging are conducted, so that a doped sol system which is uniform in dispersion and good in stability is obtained; dropwise adding the prepared sol to the surface of the treated FTO conductive glass, spin-coating to form a film, and drying; and finally, performing heat treatment on the dried sample subjected to primary film formation in a tubular furnace to form a well-crystallized Fe and Cu doped V2O5 film. The Fe and Cu ion double-doped V2O5 electrochromic film obtained by the preparation method disclosed by the invention has good electrochromic performance. The preparation method provided by the invention is simple and easy to operate, has practical feasibility and is low in overall cost.

The application provides a Cu-doped Ag film and a preparation method and application thereof, and belongs to the technical field of electromagnetic protection materials. The Cu-doped Ag film provided by the application has a Cu doping concentration of less than or equal to 10 mol%, and the thickness of the Cu-doped Ag film is 5-20 nm. By doping copper in the silver film, the 3D growth of the silver film can be inhibited, and the planar growth of the silver film can be promoted, so that a uniform and continuous ultrathin silver film is formed. By controlling the thickness of the Cu-doped Ag film and the Cu doping concentration, the Cu-Ag film can simultaneously have high light transmittance and shielding effectiveness. The results of the examples show that the ultrathin transparent electromagnetic shielding film prepared by using the Cu-Ag film of the application has high light transmittance and shielding effectiveness, the visible light transmittance is higher than 79.2%, and the shielding effectiveness is higher than 36.8 dB in the range of 20 MHz to 5 GHz.