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Method for preparing multi-quantum-dot core-silicon dioxide shell composite structure and application of structure to LED

A technology of silica and composite structure, applied in chemical instruments and methods, nanotechnology for materials and surface science, electrical components, etc., can solve problems such as quantum dot fluorescence efficiency decay, and achieve the effect of avoiding reabsorption

Active Publication Date: 2017-01-11
ANHUI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, quantum dots will be affected by the surrounding medium to agglomerate, which will lead to the attenuation of quantum dot fluorescence efficiency

Method used

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  • Method for preparing multi-quantum-dot core-silicon dioxide shell composite structure and application of structure to LED
  • Method for preparing multi-quantum-dot core-silicon dioxide shell composite structure and application of structure to LED
  • Method for preparing multi-quantum-dot core-silicon dioxide shell composite structure and application of structure to LED

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] (1) Synthesis of oil-soluble CZIS / ZnS quantum dots:

[0033] 0.02mmol or 0.1mmol of CuCl, 0.4mmol of Zn(OAc) 2 , 0.4mmol of In(OAc) 3 , 3.2 mmol of S, 8 mL of DDT, 4 mL of OAm, and 2 mL of OA were added into a three-necked flask. After degassing at 100°C for 20 min, the mixture was heated to 230°C under nitrogen. After 10 min, the reaction was quenched. The reaction mixture was cooled to 80°C, and the OAm and ODE dissolved Zn(OAc) 2 Solution (the solution is 0.8mmol Zn(OAc) 2 OAm and ODE dissolved in 2 mL (the volume ratio of OAm and ODE is 1:9) were added to the above mixture, and the ZnS shell was grown on the CZIS core in situ. Then, the temperature of the system was raised to 240° C. for 20 minutes. The reaction was quenched by adding toluene.

[0034] (2) Preparation of multi-quantum dot core-silica shell composite structure (CZIS / ZnS QDs@SiO 2 structure): the experiment encapsulated multiple CZIS / ZnS quantum dots into SiO by inverse microemulsion method 2...

Embodiment 2

[0037] (1) Synthesis of oil-soluble CZIS / ZnS quantum dots:

[0038] 0.02mmol or 0.1mmol of CuCl, 0.4mmol of Zn(OAc) 2 , 0.4mmol of In(OAc) 3 , 3.2 mmol of S, 8 mL of DDT, 4 mL of OAm, and 2 mL of OA were added into a three-necked flask. After degassing at 100°C for 20 min, the mixture was heated to 230°C under nitrogen. After 10 min, the reaction was quenched. The reaction mixture was cooled to 80°C, and the OAm and ODE dissolved Zn(OAc) 2 Solution (the solution is 0.8mmol Zn(OAc) 2 OAm and ODE dissolved in 2 mL (the volume ratio of OAm and ODE is 1:9) were added to the above mixture, and the ZnS shell was grown on the CZIS core in situ. Then, the temperature of the system was raised to 240° C. for 20 minutes. The reaction was quenched by adding toluene.

[0039] (2) Preparation of CZIS / ZnS QDs@SiO 2 The structure of the experiment: multiple CZIS / ZnS quantum dots were encapsulated into SiO by the method of inverse microemulsion 2 in the ball. 1 g of Igepal CO-520, 20...

Embodiment 3

[0042] (1) Synthesis of oil-soluble CZIS / ZnS quantum dots:

[0043] 0.02mmol or 0.1mmol of CuCl, 0.4mmol of Zn(OAc) 2 , 0.4mmol of In(OAc) 3 , 3.2 mmol of S, 8 mL of DDT, 4 mL of OAm, and 2 mL of OA were added into a three-necked flask. After degassing at 100°C for 20 min, the mixture was heated to 230°C under nitrogen. After 10 min, the reaction was quenched. The reaction mixture was cooled to 80°C, and the OAm and ODE dissolved Zn(OAc) 2 Solution (the solution is 0.8mmol Zn(OAc) 2 OAm and ODE dissolved in 2 mL (the volume ratio of OAm and ODE is 1:9) were added to the above mixture, and the ZnS shell was grown on the CZIS core in situ. Then, the temperature of the system was raised to 240° C. for 20 minutes. The reaction was quenched by adding toluene.

[0044] (2) Preparation of CZIS / ZnS QDs@SiO 2 The structure of the experiment: multiple CZIS / ZnS quantum dots were encapsulated into SiO by the method of inverse microemulsion 2 in the ball. 1 g of Igepal CO-520, 20...

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Abstract

The invention relates to a method for preparing a multi-quantum-dot core-silicon dioxide shell composite structure and application of the structure to an LED. By means of the method modification of chemical reagents such as oleic acid, 1-dodecanethiol and oleylamine, the Cu-doped Zn-In-S quantum dot structure of a multi-surface modifier is synthesized. By controlling and changing the doping amount of Cu, different quantum dot structures emitting fluorescence are synthesized. The quantum dot structures are wrapped in small silicon dioxide spheres with the diameter of tens of nanometers in a liquid-phase environment, the composite structure is placed on the surface of a GaN chip, and the color-adjustable quantum dot LED is successfully obtained. Besides, a quantum dot white light LED is obtained more easily by means of wide emission peaks of doped quantum dots.

Description

technical field [0001] The invention belongs to the field of composite nano-probes, and in particular relates to a preparation method of a multi-quantum dot core-silicon dioxide shell composite structure and its application in LEDs. Background technique [0002] Quantum dots are nanocrystalline clusters composed of hundreds to thousands of atoms. The size of quantum dots is smaller than or close to its excitonic Bohr radius, has quantum confinement effect, exhibits excellent optical properties, and can emit multicolor fluorescence. Based on their excellent fluorescent properties, quantum dots have been widely used in industry and become a hot spot in the research of nanomaterials. In the lighting industry, white LEDs based on GaN chips occupy a large market. Therefore, the inventor of GaN blue LEDs was awarded the Nobel Prize in 2014. [0003] Currently, white LEDs are still composed of yellow-emitting YAG:Ce3+ phosphors combined with blue-emitting GaN. However, some forw...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/62C09K11/59B82Y30/00B82Y40/00H01L33/50
CPCB82Y30/00B82Y40/00C09K11/025C09K11/592C09K11/623H01L33/502
Inventor 吴明在蒋童童
Owner ANHUI UNIVERSITY
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