31 results about "Cu doped" patented technology

The invention discloses a Cu-doped Type-II core-shell structure white light quantum dot material and a preparation method thereof, which belong to the technical field of semiconductor nanometer material preparation. The core in a quantum dot structure is a Cu-doped CdS quantum dot, the core is coated with a ZnSe quantum wall to form a type-II core-shell structure which is then coated with a broad-band gap ZnS passivation protective layer, and the final quantum dot is a Cu:CdS/ZnSe/ZnS structure. The quantum dot material has continuous spectrum white light, large Stokes shift, a low self-absorption factor, high fluorescence quantum efficiency and a high color rendering index; the distribution of light colors in space is uniform; different chromaticity coordinates and color temperature can be adjusted by means of adjusting the size of the inner core CdS, the thickness of the water outer ZnSe and the doping concentration of Cu. The quantum dot material does not have light color distortion within a certain temperature range; besides, the quantum dot still has excellent light stability after being excited for a long time by blue light.

The invention discloses an aqueous-phase synthesis method of a Cu-doped Zn1-xCdxS quantum dot and a core/shell structure thereof. The method comprises the following steps of directly dissolving cadmium ion sources, copper ion sources and zinc ion sources into water, adding a stabilizer, namely sulfhydryl compound, adding a sulfur source under a certain pH value and heating under the protection of inert gases to prepare the Cu-doped Zn1-xCdxS quantum dot; jacketing the Cu-doped Zn1-xCdxS quantum dot with ZnS through a secondary injection method to obtain a Cu:Zn1-xCdxS/ZnS core/shell quantum dot. The method has the advantages of low cost, good operability, good repeatability and low requirements on equipment conditions. The Cu:Zn1-xCdxS/ZnS core/shell quantum dot prepared by the method has excellent luminescence property and good fluorescence stability, is suitable for optoelectronic devices such as solid state lighting, solar cells, displays and the like and is also suitable for being widely applied in bio-labeling, imaging and the like due to good water solubility.

The invention provides the preparation of a Cu doped MnO2 mesoporous material and the application of the material in the Fenton-like water treatment advanced oxidation technology, and belongs to the fields of water treatment technologies and environment function materials. The property of the Cu doped MnO2 mesoporous material can be powder or particle; potassium permanganate, CuSO4 5H2O and maleic acid are used as main materials; the Cu doped MnO2 mesoporous material is prepared; and the ability of degradation of the Fenton-like technology on benzotriazole is improved. In order to solve the problem that the existing conventional sewage treatment has a poor effect in removing new pollutant benzotriazole, the invention provides the Cu doped MnO2 mesoporous material to be used as a catalyst, and the mesoporous material is successfully applied to a Fenton-like reaction system, the defects of the traditional Fenton method are overcome, the reactive pH range is enlarged, the forming of sludge containing iron is avoided, and the catalyst can be reused.

A method of fabricating a p-i-n type light emitting diode using p-type ZnO, and particularly, a technique for fabricating a p-type ZnO thin film doped with copper, a light emitting diode manufactured using the same, and its application to electrical and magnetic devices. The method of fabricating a p-i-n type light emitting diode using p-type ZnO includes depositing a low-temperature ZnO buffer layer on a sapphire single-crystal substrate, depositing an n-type gallium doped ZnO layer on the deposited low-temperature ZnO buffer layer, depositing an intrinsic ZnO thin film on the deposited n-type gallium doped ZnO layer, forming a p-type ZnO thin film layer on the deposited intrinsic ZnO thin film, forming a MESA structure on the p-type ZnO thin film layer through wet etching to obtain a diode structure, and subjecting the diode structure to post-heat treatment.

The invention relates to an In, Fe and Cu triple-doped lithium niobate crystal and a preparation method thereof, relating to the lithium niobate crystal and the preparation method thereof. The method solves the problems of slow response time and low light injury resistant ability of a doped lithium tantalite crystal prepared by the prior art. The In, Fe and Cu triple-doped lithium niobate crystal is prepared by Li2CO3, Nb2O5, Fe2O3, CuO and In2O3. The method comprises the following steps: firstly, required compositions are weighed; secondly, sintering is performed; thirdly, the crystal is grown by adoption of the crystal pulling method; fourthly, polarization treatment is performed; and fifthly, oxidation treatment or reduction treatment is performed, and the In, Fe and Cu doped lithium niobate crystal is obtained. The method dopes element indium (In), ferrum (Fe) and Copper (Cu) in the lithium niobate crystal, and obviously improves the light injury resistant ability and the response time of the lithium niobate crystal on the basis of preserving the prior superior performance of the lithium niobate crystal.

A metal wring process of Cu doping based on Al material mainly uses the physical deposition method to deposit multiple layers of films with Ta, TaN, Ta, Al, TaN within the same equipment continuously, among which Al metal is added with Cu and Si atom to raise antielectromigration ability of Al metal wiring. At the bottom of Al layer, a composite blocking layer is to prevent Al and Cu from diffusing to silicon slice and media. The deposition of Al metal is in two steps of low temperature and high temperature with Al seed crystal layer deposited in low temperature having a good compactness and Al layer deposited in high temperature having a good porefilling ability and a good back-flow result. TaN layer above Al metal layer can be used as a blocking layer as well as top covering layer and antireflective layer of photoetching.

The invention discloses a preparation method of an active carbon catalyst used for flue gas desulphurization and denitration, and belongs to the technical field of flue gas treatment. The preparation method of the active carbon catalyst comprises the following steps: 1, doping TiO2 with Cu: adding a copper salt into a titanium alcohol salt solution, carrying out water-bath heating to form gel, drying the gel, and grinding and sintering the dried gel to obtain Cu-doped TiO2 powder; and 2, loading the Cu-doped TiO2 powder on active carbon: adding the Cu-doped TiO2 powder, a dispersant and a binder into water, impregnating the active carbon in the above obtained solution, carrying out ultrasonic vibration, drying the vibrated solution, heating the dried solution to 400-450 DEG C according to a rate of 3-6 DEG C/min, carrying out heat insulation, and cooling the heat-insulated solution to obtain the Cu-doped TiO2 loaded active carbon catalyst. The desulphurization rate of the catalyst reaches 93.2% or above, the denitration rate of the catalyst reaches 88.7% or above; after the catalyst is regenerated, the desulphurization rate reaches 88.4% or above, and the denitration rate reaches 83.8% or above; and the catalyst has no toxicity.

The invention discloses a low-toxicity heat-sensitive quantum dot material and a preparation method thereof, and belongs to the technical field of semiconductor nanomaterial preparation. The preparation method comprises the steps as follows: by taking a Cu-doped InP quantum dot as a core, coating with a semiconductor ZnS isolation layer at first for isolating an inner material layer from an outer material layer, then coating with a semiconductor InP nanocrystal shell layer, and finally coating an outermost layer with a ZnS protection layer to form a Cu@InP/ZnS/CdSe/ZnS quantum dot. The quantum dot is highly sensitive to temperature, emits green light at normal temperature, red light at the temperature of 200 DEG C and different levels of yellow light at the intermediate temperature, and is stable in property, uniform in size and good in dispersity, and particles after the quantum dot is coated with the shell layer are in a perfect spherical shape; and as the quantum dot material prepared with the method is a non-cadmium semiconductor material, the quantum dot material has the advantage of low toxicity, accords with the green chemical synthesis concept, and is environment-friendly and strong in applicability.

The invention belongs to the field of inorganic film materials, and relates to a La and Cu doped BaFeO3-delta based ceramic oxygen permeable membrane material and a preparation method thereof. The B position of Ba0.975La0.025FeO3-delta is doped with Cu, and the chemical formula of the material is Ba0.975La0.025Fe(1-x)CuxO3-delta, wherein x is larger than 0.05 and smaller than 0.3. The preparationmethod comprises the steps as follows: dissolving materials in deionized water, adding HNO3, performing stirring, adding citric acid and ethylenediaminetetraacetic acid, evaporating the mixed solutionin water bath at 60-100 DEG C to form colloid, and heating and igniting the colloid at 200-400 DEG C to obtain powder; treating the prepared powder in an air atmosphere at 400-900 DEG C, and performing grinding and dry-pressing forming after cooling to room temperature; heating the pressed sample to 1000-1200 DEG C in an air atmosphere, keeping the temperature for 4-15 hours, and performing sintering to prepare the dense Ba0.975La0.025Fe(1-x)CuxO3-delta oxygen permeable membrane product. The oxygen permeable membrane material has compact structure, high oxygen permeability, good stability andexcellent comprehensive performance, and can be applied to continuous oxygen supply for methane partial oxidation reaction and industrial processes of separation and purification of oxygen from otheroxygen-containing gases.

The invention discloses a method used for preparing a carbon-coated Cu-doped CdS flower-shaped nano composite structure photocatalyst conveniently. The method is used for solving problems in the prior art that preparation cost of CdS nano structure photocatalyst is high, synthesis process is complex and is difficult to control, product uniformity is poor, yield is low, repeatability is low, and much photocorrosion is caused. The method is low in cost, and high in repeatability, and is convenient to control; and an obtained product possesses photocorrosion resistance. According to the method, cadmium chloride, thiourea, glucose, copper sulphate, and polyvinylpyrrolidone (PVP) are taken as reaction reagents, glycol is taken as a solvent, one-step solvothermal reaction is adopted, and an obtained liquid is subjected to centrifugation, washing, and drying so as to obtain the carbon-coated Cu-doped CdS flower-shaped nano composite structure photocatalyst product.

The invention provides a preparation method of a Cu doped p type ZnO thin film, which comprises the following steps of: firstly, pressing ZnO with the purity being more than 4N and high-purity Cu powder into a required target material in a mixing way; secondly, sputtering and depositing the target material on a substrate to form a thin film under a mixed gas environment of argon gas and oxygen; and thirdly, carrying out annealing treatment on the substrate with the formed thin film to obtain the Cu doped p type ZnO thin film. The invention can solve the difficulty that a p type ZnO material is difficult to prepare by Group IB elements.

The invention discloses a preparation method and an application method for a zinc cathode active material of a zinc-nickel secondary battery. The preparation method for the active material includes the steps: (1) dissolving Cu (CH3COO) 2, Zn (CH3COO) 2 and urea in deionized water to form transparent mixed liquor; (2) ultrasonically dispersing the mixed liquor, transferring the mixed liquor into a hydro-thermal reactor and placing the reactor into a drying oven for heat preservation; and (3) filtering, washing and drying deposits and calcining the deposits at a certain temperature to obtain Cu doped ZnO. By the aid of the active material, zinc cathode deformation can be decreased, dissolution of the zinc cathode active material is suppressed, and accordingly, the cycle life of the zinc-nickel secondary battery is prolonged.

The invention provides a Cu-doped manganese oxide octahedral molecular sieve catalyst and a preparation method and application thereof. The preparation method comprises the following steps: S1, dissolving bivalent manganese salt in deionized water, and adding an appropriate amount of nitric acid for regulating the pH value to obtain a first solution; S2, dissolving permanganate in deionized waterto obtain a permanganate solution, dropwise adding the obtained permanganate solution in a first solution or dropwise adding the first solution in the permanganate solution, after the dropwise addingis completed, obtaining a mixed solution, adding a copper salt containing metal component solution, and performing reflowing at the temperature of 100-140 DEG C to obtain an intermediate; S3, washingthe intermediate with deionized water, filtering and drying to obtain a black solid; and S4, performing high-temperature calcination to obtain the Cu-doped manganese oxide octahedral molecular sieve catalyst. The catalyst has effective ozone decomposing performance at room temperature.

The invention discloses a hydrothermal method for preparing a Cu-doped SnSe2 lithium ion battery electrode material, comprising the steps of: weighing SnCl2 and SeO2; placing the SnCl2 and SeO2 in theliner of a hydrothermal reaction vessel; weighing and placing copper nitrate solid particles in the liner; adding deionized water to the liner, and sealing the liner in the reaction vessel after magnetic stirring; placing the liner in a drying oven for a hydrothermal reaction; after the reaction is completed, centrifugally washing a reaction product with deionized water and absolute ethyl alcohola plurality times, and then drying the reaction product. The method is easy to operate and does not require complicated equipment. The synthesized Cu-doped SnSe2 composite material, as a negative electrode material, is used in a lithium ion battery system to be subjected to an electrochemical performance test. In an electrochemical test with a current density of 0.1C, the specific discharge capacities in the first three charge-discharge cycles are 433.1mAh g-1, 415.4mAh g-1, 395.9mAh g-1 respectively,, and the specific discharge capacity remains at 152mAh g-1 after 100 cycles.

The invention discloses a method for preparing a Cu doped dilute magnetic semiconductor thin film. The method comprises the following steps of 1, a substrate is cleaned, oil stains and impurities on the surface of the substrate are removed; 2, an ion beam deposition equipment and a magnetron sputtering equipment are adopted, the substrate is placed in a vacuum chamber of the ion beam deposition equipment, and a Cu layer is deposited on the surface of the substrate through the ion beam; 3, the substrate deposited with the Cu layer is transferred into a vacuum chamber of the magnetron sputteringequipment, an Al target is adopted as a sputtering target material, a working gas Ar, a reaction gas N2, and an AlN layer on the surface of the Cu layer is sputtered to obtain a composite thin film;4, a sample table for heating magnetron sputtering equipment to place substrate to 500 DEG c, and annealing treatment on the composite thin film obtained in the step s3 to finally obtain the Cu dopeddilute magnetic semiconductor thin film. The method is simple in process, controllable and high in operability, the sample table heating system is used for heating the sample, so that the effect of re-uniformly distributing the doped cu in the thin film is achieved, meanwhile, the crystallization quality of the whole thin film can be improved.

The invention discloses a household functional paint as well as a preparation method and application thereof. A Cu-doped bismuth vanadate visible light catalyst and porous aluminium oxide microspheres are used as synergetic filling materials for adsorption and photocatalysis; a water-based fluorocarbon emulsion is used as a binding agent; indoor wall surfaces and furniture are coated with the paint which has the air purification function of degrading harmful organic matters in air. The preparation process is simple, and the paint is easy to store and apply.

The invention discloses a preparation method for Cu doping of bismuth selenide nano-materials of a topology insulator, and the nano-materials are a nano-wire and a nano-strip. The method comprises thesteps: employing a vapour deposition method, taking bismuth selenide as a raw material, carrying out the high-temperature evaporation in a tube furnace, carrying out the transmission through inertialcarrying gas, and preparing the Cu-doped bismuth selenide nano-materials under the condition of taking an Au/Cu film as a catalyst. The prepared materials are good in crystallinity, and the lengths of the nano-wire and the nano-strip are at the level of hundreds of micrometers. The X-ray diffraction analysis (XRD), X-ray energy dispersion spectrum (EDS) and X-ray excited Auger electron spectrum (XAES) are employed for indicating the introduction of Cu and the valence state of doped Cu.