Wiring technology of copper doped metal based on A1 material

A metal wiring and process technology, applied in the field of large-scale integrated circuit manufacturing process, can solve the problems of electromigration failure, electromigration failure rate, increase of Al wire circuit density, Al connection open circuit failure, etc., so as to improve reliability, improve resistance Electromigration ability, effect of improving hole filling performance and surface flatness

Inactive Publication Date: 2003-04-30
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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Problems solved by technology

This void will eventually lead to the open circuit failure of the Al connection, that is, electromigration failure
In gene

Method used

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  • Wiring technology of copper doped metal based on A1 material

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Embodiment Construction

[0021] Further specifically describe the present invention below by embodiment, embodiment:

[0022] 1. This solution can complete multi-layer film deposition on a multi-chamber physical vapor deposition (PVD) equipment (such as ENDURA 5500 PVD equipment produced by Applied Materials, USA).

[0023] 2. First degassing (temperature 400°C-500°C, time 120 seconds-180 seconds);

[0024] 3. Then use Ar plasma to pretreat the surface for 10-20 seconds to remove the residual material on the surface of the interlayer insulating medium;

[0025] 4. Next, deposit a layer of metal Ta with a thickness of 20nm and a temperature of 420°C;

[0026] 5. Then deposit TaN with a thickness of 40nm and a deposition temperature of 420°C;

[0027] 6. Deposit a layer of Ta on the TaN with a thickness of 20nm and a temperature of 420°C.

[0028] 7. Deposit Al metal film containing 1% Cu and 1% Si, divided into 2 steps:

[0029] Step 1: Deposit a 100nm-300nm Al (containing 1% Cu, 1% Si) seed layer ...

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Abstract

A metal wring process of Cu doping based on Al material mainly uses the physical deposition method to deposit multiple layers of films with Ta, TaN, Ta, Al, TaN within the same equipment continuously, among which Al metal is added with Cu and Si atom to raise antielectromigration ability of Al metal wiring. At the bottom of Al layer, a composite blocking layer is to prevent Al and Cu from diffusing to silicon slice and media. The deposition of Al metal is in two steps of low temperature and high temperature with Al seed crystal layer deposited in low temperature having a good compactness and Al layer deposited in high temperature having a good porefilling ability and a good back-flow result. TaN layer above Al metal layer can be used as a blocking layer as well as top covering layer and antireflective layer of photoetching.

Description

technical field [0001] The invention belongs to the technical field of large-scale integrated circuit manufacturing technology, and in particular relates to an Al metal wiring technology. Background technique [0002] In the integrated circuit process, metal interconnection wires are used to provide power and transmit electrical signals. The most commonly used conductive metal materials are metal Al and Cu. Al is a good conductive metal with a resistivity of 2.66 microohms. cm and a melting point of 660 ℃, Al metal is easy to form a good ohmic contact with doped silicon or polysilicon, Al has strong resistance to external corrosion, and can be bonded with gold wires by ultrasonic method to form a finished integrated circuit with complete functions. Al metal deposition includes physical deposition and chemical vapor deposition. The most commonly used of these is physical deposition. In the early days, Al deposition was generally done by evaporation. As the metal film thickn...

Claims

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Application Information

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IPC IPC(8): H01L21/768
Inventor 徐小诚缪炳有
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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