Method for preparing GaMnN diluted magnetic semiconductor thin film material
A technology of dilute magnetic semiconductor and thin film materials, applied in the application of magnetic film to substrate, metal material coating process, gaseous chemical plating, etc., can solve the problems of complex tail gas treatment process, expensive raw materials, high maintenance cost, etc. Achieve the effects of short production cycle, good crystal quality and low preparation cost
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[0020] Please also see figure 1 with figure 2 , the technical features of the present invention will be further described below in conjunction with specific growth processes.
[0021] (1) Before preparing the GaMnN dilute magnetic semiconductor thin film material, the substrate was ultrasonically cleaned twice with acetone, each time for 10 minutes, after each cleaning, it was rinsed with deionized water for about 2 minutes, and then ultrasonically cleaned with ethanol for 10 minutes , and finally rinsed with deionized water and dried for later use.
[0022] (2) Put the GaN ceramic target on the transfer rod 2 through the valve 3 of the sampling chamber 1 . Turn on the mechanical pump of the vacuum system 6, and when the pressure in the growth chamber 5 reaches below 10 Pa, turn on the molecular pump of the vacuum system 6, pump for about 4 hours, and the background vacuum of the system can reach 5×10 -5 Below Pa. Then, the GaN ceramic target is put into a target positio...
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