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Method of preparing zinc oxide doped ambient temperature diluted magnetic semi-conducting material

A technology of dilute magnetic semiconductor and zinc oxide is applied in the field of new semiconductor spintronic materials and device preparation, which can solve the problems of inconsistency and magnetic indeterminacy.

Inactive Publication Date: 2007-08-15
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The understanding of room temperature ferromagnetism in the prepared Co-doped ZnO samples is not uniform at present, and the origin of the magnetism is still inconclusive.

Method used

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  • Method of preparing zinc oxide doped ambient temperature diluted magnetic semi-conducting material

Examples

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Embodiment 1

[0015] Example 1 Preparation of room temperature dilute magnetic semiconductor Co x Zn 1-x O(x=0.06) material

[0016] Preparation of room temperature dilute magnetic semiconductor Co by solid-state reaction method combined with special atmosphere post-annealing process x Zn 1-x O material. Use (analytical pure) zinc oxide powder and tricobalt tetroxide powder (Co:Zn molar ratio is 6:94), weigh the two oxides with an electronic balance according to the required molar ratio, put them into a ball-milled agate jar and add an appropriate amount of Ionized water and agate balls, at room temperature, use a planetary ball mill for long-term wet ball milling (60 hours), so that the particle size of zinc oxide and cobalt tetroxide is further reduced and uniformly mixed, and then dried at 100 ° C to form a uniform of mixed materials. Pre-sintering was carried out in an air atmosphere, and the temperature was set at 1000°C for 12 hours of reaction sintering to fully react the mixtur...

Embodiment 2

[0018] Example 2 Preparation of room temperature dilute magnetic semiconductor Co x Zn 1-x O(x=0.01) material

[0019] Use (analytical pure) zinc oxide powder (ZnO) and cobalt trioxide powder (Co 2 o 3 ) whose Co:Zn molar ratio is 1:99, the two oxides are weighed with an electronic balance according to the required molar ratio, put into a ball-milled agate tank and add an appropriate amount of deionized water and agate balls, at room temperature, use a planetary formula The ball mill is used for long-time ball milling to further reduce the particle size of zinc oxide and cobalt trioxide powder and mix them fully and uniformly, and then dry them at less than 100°C to form a uniform mixed material. Pre-sintering by reaction in an air atmosphere, the temperature is set at 800-1000 ° C for 4-12 hours of reaction sintering, so that the mixture is fully reacted; Co 0.01 Zn 0.99 O material, then pressed into pellets, cured and sintered using the same temperature as reactive sint...

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Abstract

The invention discloses a cobalt doping method of rare-magnet broad-forbidden band semiconductor zinc oxide under indoor temperature in the new-typed semiconductor self-cyclone electronic device making domain, which comprises the following steps: adopting solid-phased sintering method to make Co impurity in the ZnO according to certain proportion; proceeding long-time wet-method balling in the agate tank through planetary ball grinder; drying; grinding; sintering; annealing; using inert gas and hydrogen according to certain proportion; annealing doped zinc oxide rare-magnet sediment material; obtaining CoxZn1-xO material with magnet under indoor temperature.

Description

technical field [0001] The invention belongs to the field of novel semiconductor spintronic materials and device preparation, and in particular provides a method for preparing a cobalt-doped zinc oxide semiconductor material with a dilute magnetic wide band gap at room temperature. Background technique [0002] As a wide bandgap semiconductor, zinc oxide (ZnO) has many excellent properties, such as high melting point and thermal stability, good electromechanical coupling and low electron-induced defects. For a long time, research on ZnO thin film materials has mainly focused on piezoelectricity, photoelectricity, gas sensitivity, pressure sensitivity, etc. As an important dilute magnetic semiconductor, ZnO has attracted extensive attention both internationally and domestically in recent years and has become one of the research hotspots. Spintronic devices have the advantages of low power consumption, high density, non-volatility, low temperature sensitivity, high integratio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G1/02C01G9/02C01G51/04H01L21/34C04B35/453C04B35/622
Inventor 王漪孙雷韩德东刘力锋康晋锋刘晓彦张兴韩汝琦
Owner PEKING UNIV
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