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107results about How to "Performance degradation" patented technology

Single nanowire electrochemical device and assembly and in-situ characterization method thereof

The invention relates to a single nanowire electrochemical device and an assembly and in-situ characterization method thereof. The method comprises the following steps of: dispersing nanowire anodes of vanadium oxide nanowires, and the like, nano film cathodes of HOPG (Highly Oriented Pyrolytic Graphite), and the like or nanowire cathodes of silicon nanowires, and the like and nano film anodes of LiCoO2, and the like on a substrate; respectively making metal electrodes at both ends of the nanowires and the nano films as current collectors by adopting technologies, such as PECVD (Plasma-Enhanced Chemical Vapor Deposition), and the like; then, depositing silicon nitride or spinning a photoresist on the metal current collectors as protection layers of the current collectors by adopting the PECVD technology, and the like; and finally, dispensing a polymer electrolyte on the surface of the substrate to finish the assembly of the single nanowire electrochemical device. In the invention, charging and discharging tests are carried out on the electrochemical device, then in-situ electrical transport performance tests, micro-domain Raman spectrum analysis, and the like are carried out on the single nanowire electrodes in different charging and discharging states, the direct relation among the electrical transport, the structure and the electrochemical performance of the nanowire electrode material is established, a platform is provided for battery diagnosis, and the like and a support power supply can be provided for the nano device.
Owner:武汉楚理佳纳新能源科技有限公司

Multi-pair gigabit ethernet transceiver

Various systems and methods providing high speed decoding, enhanced power reduction and clock domain partitioning for a multi-pair gigabit Ethernet transceiver are disclosed. ISI compensation is partitioned into two stages; a first stage compensates ISI components induced by characteristics of a transmitters partial response pulse shaping filter in a demodulator, a second stage compensates ISI components induced by characteristics of a multi-pair transmission channel in a Viterbi decoder. High speed decoding is accomplished by reducing the DFE depth by providing an input signal from a multiple decision feedback equalizer to the Viterbi based on a tail value and a subset of coefficient values received from a unit depth decision-feedback equalizer. Power reduction is accomplished by adaptively truncating active taps in the NEXT, FEXT and echo cancellation filters, or by disabling decoder circuitry portions, as channel response characteristics allow. A receive clock signal is generated such that it is synchronous in frequency with analog sampling clock signals and has a particular phase offset with respect to one of the sampling clock signals. This phase offset is adjusted such that system performance degradation due to coupling of switching noise from the digital sections to the analog sections is substantially minimized.
Owner:AVAGO TECH INT SALES PTE LTD

Enhanced AlGaN/GaN HEMT (High Electron Mobility Transistor) device and manufacturing method thereof

The invention relates to an enhanced AlGaN/GaN HEMT (High Electron Mobility Transistor) device and a manufacturing method thereof, belonging to the technical field of semiconductor devices. The device comprises an AlGaN/GaN heterojunction structure located on the surface of a substrate and gate, source and drain electrode structures, wherein F ion or Cl ion fixed negative charges are arranged in a gate dielectric film material. In the invention, through introducing the F ion or Cl ion fixed negative charges into a gate dielectric film and controlling the electric charge quantity of the introduced fixed negative charges, the threshold voltage of a transistor is regulated and the enhanced AlGaN/GaN HEMT device with the threshold voltage greater than zero is realized. In the invention, the enhanced AlGaN/GaN HEMT device structure is obtained though a method of introducing the fixed negative charges into the gate dielectric film material; interface characteristics of the AlGaN/GaN heterojunction are not influenced so that the performance degeneration of the device is not caused; the process is simple and controllable and is compatible with the manufacturing process of a depletion mode (normally-on) AlGaN/GaN HEMT device; the source-drain saturation current density and the gate-drain current of the manufactured device for manufacturing a GaN enhanced effect transistor are small; and therefore, the device is particularly suitable for developing a GaN logic circuit.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Lossless reduction method of welding residual stress of high-strength aluminum alloy large thin-wall storage box

InactiveCN107460421AFacilitates microscopic plastic deformationSimple equipmentThin walledUltrasonic generator
The invention discloses a non-destructive reduction method for welding residual stress of a large-scale thin-walled high-strength aluminum alloy storage tank. The material of the storage tank is 2219 aluminum alloy which has been subjected to solid solution treatment after cold rolling and artificial aging treatment, and comprises the following steps: (1) ) Connect the stress relief equipment system and set parameters, (2) The ultrasonic transducer converts the electrical signal generated by the ultrasonic generator into a high-power ultrasonic wave, and directly injects the couplant into the welding joint of the tank that needs stress relief treatment, (3) Detect the residual stress value of the treated part, and carry out welding residual stress reduction treatment according to the actual situation. The present invention uses a high-power ultrasonic transducer to convert the electrical signal generated by the high-power ultrasonic generator into a high-power ultrasonic wave, and directly injects the coupling agent into the welding joint of the storage tank, and activates the lattice arrangement in the stress zone material of the welding joint through the power ultrasonic, Induces dislocations to detach from pinning, promotes microscopic plastic deformation, and realizes the reduction of residual stress inside the workpiece material.
Owner:SICHUAN AEROSPACE LONG MARCH EQUIP MFG CO LTD

Channel equalization method and channel equalizer based on RLS (recursive least square) and LMS (least mean square) combined algorithm

The invention relates to a channel equalization method and a channel equalization system based on an RLS (recursive least square) and LMS (least mean square) combined algorithm. The method includes: step 101), training tapping coefficients of an equalizer on the basis of training data by an RLS equalization algorithm until the equalizer reaches convergence, and assuming that the equalizer reaches convergence when the training data are subjected to Ncth iteration; step 102), iterating the 'jth' bit of received user data, windowing an error value acquired by iteration, and calculating an average error autocorrelation estimation value of data, with a fixed length, in a sliding window; step 103), comparing the acquired average error autocorrelation estimation value with a preset threshold value, and selecting one of equalization algorithms including the RLS equalization algorithm and an LMS algorithm; step 104), equalizing the jth user data by the selected equalization algorithm, updating j as j+1, and then returning to the step 102) until all received user data are processed. The channel equalization method and the channel equalization system have the advantages that excellent performance in time-varying channels is achieved, and requirements on real-time performance can be met.
Owner:INST OF ACOUSTICS CHINESE ACAD OF SCI
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