Method for preparing multi-metal element doped diamond film

A technology of metal elements and diamond, which is applied in the field of compound preparation of high-performance DLC film materials, can solve the problems of increasing the friction coefficient of DLC film, increasing the brittleness of DLC film, and not developing the multi-component doping technology of DLC film, so as to achieve improvement The effect of overall performance

Inactive Publication Date: 2010-07-28
CHINA UNIV OF GEOSCIENCES (BEIJING)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Doping W, Ti, Cr, Zr, Cu and other metal elements to form a multi-component multi-phase structure based on amorphous carbon film can significantly improve the comprehensive performance of DLC film; but there are also some problems in doping a single metal, such as Doping tungsten will increase the friction coefficient of the DLC film, and doping titanium wi

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Firstly, ultrasonic cleaning technology is used to remove the contamination layer on the surface of the cemented carbide tool; the surface of the tool is bombarded and cleaned by the argon ion beam generated by the ion source of the anode layer; and then the titanium ion generated by the circular cathode arc source is used to The surface of the tool is cleaned by ion bombardment; then the Ti / TiN / TiCN / TiC gradient transition layer is prepared by cathodic arc deposition. The cathodic arc target material is Ti, and argon, argon / nitrogen mixed gas, nitrogen, and nitrogen are successively introduced into the vacuum chamber / methane mixed gas, methane, the negative bias voltage of the workpiece is -100~-800V; finally, the DLC film doped with Ti and Cu is synthesized by ion beam deposition + mosaic composite target magnetron sputtering, and the ion source adopts the anode layer ion source. The gas fed into the ion source of the anode layer includes argon and methane, the magnet...

Embodiment 2

[0039] First, use ultrasonic cleaning technology to remove the surface contamination layer of high-speed steel mold; use the anode layer ion source to bombard the surface of the mold with argon ion beam; The surface is cleaned by ion bombardment; then the Cr / CrN / CrCN / CrC gradient transition layer is prepared by cathodic arc deposition. The cathodic arc target material is Cr, and argon, argon / nitrogen mixed gas, nitrogen, nitrogen / Methane mixed gas, methane, negative bias voltage of the workpiece is -100 ~ -800V; finally, the DLC film doped with Cr and Ag is synthesized by ion beam deposition + mosaic composite target magnetron sputtering, and the ion source adopts the anode layer ion source. The gas entering the ion source of the anode layer includes argon and methane, the magnetron sputtering target adopts a DC magnetron sputtering target, the main material of the mosaic composite target is Cr, and the mosaic block material is Ag.

Embodiment 3

[0041] First, use ultrasonic cleaning technology to remove the bearing surface contamination layer; then use the anode layer ion source to bombard the bearing surface with argon / hydrogen mixed ion beam; then use the anode layer ion source to assist intermediate frequency magnetron sputtering deposition to prepare W / WC gradient transition layer, the magnetron sputtering target material is W, the gas passed into the ion source of the anode layer includes argon, argon / acetylene mixed gas, and the ion energy of the ion beam is -100~-2000eV; finally, ion beam deposition + mosaic composite Target medium-frequency magnetron sputtering synthesizes DLC film doped with W, Ti and Au at the same time. The ion source adopts the anode layer ion source, and the gas passed into the anode layer ion source includes argon and acetylene. For the sputtering target, the main material of the mosaic composite target is W, and the materials of the mosaic block are Ti and Au.

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Abstract

The invention discloses a method for preparing a multi-metal element doped diamond film, which is characterized by comprising the following steps: removing a pollution layer on matrix surface by using the ultrasonic cleaning technology, carrying out ion beam bombardment cleaning on the matrix surface by using inert gas ion beam produced by an ion source, carrying out metal ion bombardment cleaning on the matrix surface by using metal ions produced by a cathodic arc source under a condition of high workpiece negative bias, preparing a gradient transition layer by using a cathodic arc deposition or ion beam assisted magnetron sputtering (IBAMS), and synthesizing a multi-metal element doped DLC film on the transition layer by using ion beam deposition and mosaic composite target magnetron sputtering, wherein the ion beam deposition is realized by introducing carbon gas in the ion source; and the mosaic composite target doped multiple metal are used, and the main body material of the mosaic composite target can be any one of Ti, Cr, W, Zr, Nb and Ta, and the mosaic block material is one or more of other metals except the above main body materials.

Description

Technical field: [0001] The patent of the invention relates to a novel diamond-like carbon (DLC) film preparation technology, which belongs to the composite preparation technology of high-performance DLC film materials. Background technique: [0002] Diamond-like carbon films have high hardness, high elastic modulus, excellent friction and wear properties, chemical stability and biocompatibility, and have very broad application prospects. However, large internal stress, poor film / substrate bonding force, poor thermal stability, and high brittleness limit the application of DLC films in harsh service conditions. [0003] Preparing transition layers such as Ti / TiN / TiCN / TiC, Ti / TiC, CrN / CrCN / CrC before depositing the DLC film can overcome the problem of large differences in structure and performance at the film / substrate interface, relieve the internal stress of the DLC film and improve the DLC. Membrane / substrate binding force of the membrane. Doping W, Ti, Cr, Zr, Cu and ot...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/02C23C14/32C23C14/35
Inventor 付志强王成彪岳文彭志坚于翔
Owner CHINA UNIV OF GEOSCIENCES (BEIJING)
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