6 results about "Ion beam sputtering deposition" patented technology

The application discloses a method for preparing a low-loss deep ultraviolet optical thin film by ion beam sputtering, comprising the following steps: substrate super-clean pretreatment; ultra-high vacuum environment establishment; low-loss film system material selection; double ion beam collaborative sputtering deposition; interface and stress regulation; in-situ real-time monitoring and post-processing. The application overcomes the problem of high loss of existing deep ultraviolet ion beam sputtering coating, provides a systematic process method, effectively reduces impurity adsorption and structural defects in the film layer through main ion beam sputtering deposition and auxiliary ion beam in-situ bombardment cleaning interface, cooperates with interface gradient regulation and fine stress control process, can adapt to different substrate materials and film system structures, and can be applied in batch to the preparation of optical elements required by deep ultraviolet laser systems and deep ultraviolet spectral analysis instruments; realizes that the thin film absorption loss is less than 5ppm, the surface roughness Ra is less than 0.5nm, the interface defect density is significantly reduced, and the optical performance and stability of the deep ultraviolet element are improved.

The invention discloses ion beam deposition equipment and an alloy film deposition method, and relates to the technical field of alloy preparation.The ion beam deposition equipment comprises the steps that firstly, the sputtering time of all alloy elements is calculated according to the thickness of a pre-deposited alloy film, the proportion of all the alloy elements in the alloy film and the deposition rate of all the alloy elements, and then the sputtering time of all the alloy elements is calculated; the first ion source is controlled to generate a first ion beam, the first carrying table is controlled to rotate, the target materials on all the subareas of the first carrying table circularly rotate to a first ion beam focusing area multiple times and are sputtered and deposited to the surface of a sample located on the second carrying table through the first ion beam, an alloy film is formed, and all the target materials correspond to alloy elements one to one; meanwhile, target material particles are blocked or allowed to be deposited on the surface of a sample in cooperation with a baffle, so that the total time of sputtering of each target material in the target area by the first ion beam is controlled to be the calculated sputtering time of the corresponding alloy element, and accurate regulation and control of the proportion of each alloy element in the alloy film are achieved; the content of impurity elements in the alloy film is reduced.

The utility model discloses an ion beam sputter coating machine for a large-size wafer. The ion beam sputter coating machine comprises a base, a rotating table, a wafer clamping device, an ion source assembly, an adjusting mechanism and a vacuum cavity, omnibearing film coating of the wafer is achieved through cooperation of the rotating table and the clamping device, and frequent clamping is not needed. The deflection correction mechanism compensates for uneven distribution of the ion beams, and the focusing lens can adjust the diaphragm to optimize the shape of the ion beams; the reflecting layer and the cooling fins in the vacuum cavity reduce the temperature influence, and the damping structure improves the operation stability. The large-size wafer film coating efficiency and the film layer uniformity can be remarkably improved, surface damage and operation complexity are reduced, and high practicability and popularization value are achieved.

The invention discloses a method for realizing high surface shape precision of a thin film element under ion beam sputtering deposition. According to the method, according to the stress change rule of a thin film material HfO2 under ion beam sputtering deposition at different atmospheric annealing temperatures, the HfO2 thin film material with the zero stress state annealing temperature is adopted, the thin film element is annealed at the temperature so as to improve the stress state of the thin film element, and high surface shape precision control over the thin film element is achieved. The method can be used for preparing thin film elements with high surface shape precision control requirements.

The invention provides an ion beam sputtering method, device and system and electronic equipment. The method comprises the following steps: applying different target bias voltages to a plurality of target materials which are fixedly arranged, so that sputtering occurs or does not occur on the surfaces of the target materials; and ion beams are emitted to the target material with the surface capable of being sputtered, and ion beam sputtering deposition is carried out. The ion beam sputtering deposition method solves the technical problems that an existing ion beam sputtering deposition method generally depends on a mechanical movable structure to achieve ion beam sputtering target material selection and switching, particle pollution, deflation and lubrication residues are likely to be introduced in a high-cleanliness and low-defect coating scene, and the reliability and long-term stability of a system are remarkably reduced.

This invention discloses a method and apparatus for fabricating deep ultraviolet optical thin films based on a stress-compensating superlattice structure, comprising: (1) Stress-compensating superlattice unit (SSC-Unit) design: periodically inserting SSC-Units into deep ultraviolet high-reflectivity or anti-reflectivity film systems, each SSC-Unit consisting of compressive stress material and tensile stress material; (2) Dynamic ion energy modulation deposition: using ion beam sputtering (IBS) deposition technology, the change in substrate curvature radius is measured in real time through a multi-beam laser curvature monitoring system, and the instantaneous stress is calculated based on the Stoney formula. When the stress deviates from the ±20MPa threshold, the ion energy or SSC-Unit insertion frequency is automatically adjusted. This invention has significant stress self-compensation effect, excellent optical performance, and enhanced process robustness. It is not only applicable to the 193nm band, but can also be extended to other deep ultraviolet and near ultraviolet bands such as 248nm and 266nm.