76results about How to "Small temperature coefficient of resistance" patented technology

The invention relates to the technical field of electronic cigarettes, and particularly discloses a microporous ceramic thick film heating element for an electronic cigarette tar atomization core anda manufacturing method of the element. The microporous ceramic thick film heating element comprises a microporous ceramic base plate, a heating resistance film layer and an electrode layer, wherein the heating resistance film layer comprises a middle part and two connecting parts; the electrode layer comprises two electrode films arranged at intervals; the two connecting parts are respectively connected with the upper ends of the two electrode films; the middle part is connected with the upper surface of the microporous ceramic base plate; the heating resistance film layer is used for heatingthe microporous ceramic base plate so that the cigarette tar of an electronic cigarette is atomized and escapes through micropores of the microporous ceramic base plate. The microporous ceramic thickfilm heating element disclosed by the invention has the advantages that the use is safe and reliable; the service life is long; the cigarette tar reducing degree is high; the user experience and the mouthfeel are good, and the like; the manufacturing method of the element is simple and efficient; the operation and control are convenient; the product quality is stable; industrialized production isfacilitated.

The invention discloses a rare-earth resistor slurry for high-power thick-film circuits in the medium-low resistance section and a preparation method thereof. The rare-earth resistor slurry for high-power thick-film circuits in the medium-low resistance section includes a functional phase, an inorganic bonding phase, and a sintering accelerator , organic carrier, the functional phase is composed of nano-silver powder and ruthenium dioxide powder, and the inorganic bonding phase is composed of SiO 2 , CaO, B 2 o 3 、A1 2 o 3 、 Bi 2 o 3 , rare earth oxides, and crystal nucleating agents; the organic carrier is composed of organic solvents, polymer thickeners, dispersants, defoamers, and thixotropic agents; Low and adjustable, low and adjustable resistance temperature coefficient, excellent printing and firing characteristics, and can match the insulated stainless steel substrate. The process steps of the preparation method are the preparation of the inorganic bonding phase, the preparation of the functional phase, the preparation of the organic carrier, and the preparation of the resistance slurry, and the preparation method can effectively produce and prepare the above-mentioned rare earth resistance slurry.

The invention relates to an evaporative cooling non-homogenous power transformer and aims at solving the problems existing in cooling technology of the transformer in prior art, the transformer of the invention comprises a box body, a transformer in the box body, and an evaporative cooling medium loaded in the box body, wherein, the evaporation temperature of the cooling medium is between 30 DEG C to 123 DEG C. The transformer body is immersed in the evaporative cooling medium and provided with a cooling device which is used for cooling the air medium flowing out by evaporation from the box body to condense the air medium into liquid which reflows into the cooling device in the box body. When the transformer works, the whole process of evaporation and condensation of the cooling medium does not need external power. Good and effective automatic circulating cooling is realized; operation temperature of the transformer is reduced and operation efficiency of the transformer is enhanced. The cooling medium (A HFC-8160) used in the process has good environmental protection ability and is much better than the sulfur hexafluoride used in the traditional technology.

The present invention discloses a tantalum nitride sheet-type thin film resistor, including an insulating substrate, two surface electrodes and two back electrodes respectively disposed on the front and rear surfaces of the insulating substrate, terminal electrodes disposed on both ends of the insulating substrate and connected with the surface electrodes and the back electrodes, an intermediate electrode covering the surfaces of the surface electrodes, the back electrodes and the terminal electrodes, an external electrode covering the surface of the intermediate electrode, a resistive layer arranged between the two surface electrodes and connected with the two surface electrodes, and an insulating encapsulating layer covering the surface of the resistive layer, wherein the resistive layer is a tantalum nitride thin film. The tantalum nitride sheet-type thin film resistor of the present invention has the characteristics of high precision, small temperature coefficient of resistance, moisture resistance, high stability and good high-frequency performance. Compared with other thin film products, the tantalum nitride thin film has the advantages of higher stability and lower temperature coefficient of resistance, and can be applied under more harsh natural conditions, therefore the tantalum nitride thin film resistors of high power can bring higher economic benefit.

The invention belongs to the field of metal materials, and particularly relates to a microalloyed high-strength precision nickel-chromium resistance alloy material. A preparation method of the microalloyed high-strength precision nickel-chromium resistance alloy material comprises the steps of vacuum induction melting, electroslag remelting, vacuum consumable remelting and forging cogging. The material prepared by the method has high resistivity, low temperature coefficient of resistance, excellent heat resistance, corrosion resistance and mechanical properties, and good processing performance, can meet the processing requirements of high-precision foils and fine wires, improves the processing accuracy and surface quality of finished products, and is used for the production of high-precision electronic components, the products, namely precision resistance alloys, are made by the VIM+ESR+VAR smelting process, due to the precise control over the content of alloy elements, impurities andgas in the products, the electrical properties and the processing performance of the products meet the requirements, and the products can face the high-end precision resistance alloy market at home and abroad.

The invention relates to a relates to the field of copper-nickel alloy, and in particular relates to a copper-nickel 34 metal wire and a preparation method thereof. The copper-nickel 34 wire comprises, by weight, 33-35% of Ni, 0.05-0.6% of Mn, 0.01-0.5% of Fe, 0.01-0.3% of Ti, 0.01-0.1% of B, 0.001-0.05% of Re, and the balance of copper. The preparation method of the copper-nickel 34 metal wire comprises the following steps: conducting mixed melting according to the formula; peeling the obtained ingot and forging; drawing the forged blank; and repeating drawing and annealing for at least 2 times, until the copper-nickel 34 metal wire with desired specifications is obtained. The copper-nickel 34 metal wire prepared by the method of the invention has low resistance temperature coefficient, excellent corrosion resistance, good welding performance and processing performance, high tensile strength and elongation rate, and resistivity about 0.40 ohm.mm<2> / m.

The invention discloses a manufacturing method of a resistor. The manufacturing method of the resistor comprises the following steps: obtaining a combined plate body which is formed by sticking a resistance layer and an insulating substrate; engraving the resistance layer on the combined plate body to obtain at least one resistor body, wherein the upper surface of the resistor body comprises a resistance area and two electrode areas, and the resistance area and the two electrode areas are not overlapped; printing a mask layer on the resistance area; forming a corresponding upper electrode on each electrode area; and covering the surface of the mask layer with a protective layer to obtain the resistor. Correspondingly, the invention also provides the resistor. High-precision resistance value and low TCR value of the resistor can be realized effectively.

The application relates to a graphene current sensor comprising a sleeve, an induction wire and a detection circuit, wherein the inner side of the sleeve is used to fix the wire under test; the induction wire is disposed outside the sleeve and is used to generate an induced voltage according to an induced current generated by the wire under test; the detection circuit is electrically connected tothe induction wire and is configured to detect the induced voltage generated by the induction wire, and calculate the current of the wire under test according to a preset mapping relationship betweenthe induced voltage and the current of the wire under test, wherein the induction wire is made of a graphene metal composite material. Using induction wires to detect the current of the wire under test does not produce magnetic saturation and expands the application range of graphene current sensors. In addition, the use of graphene metal composite induction wires can improve the strength and conductivity of traditional metal wires, so that the induction wires have the advantages such as low resistance temperature coefficient, good resistance to heat dissipation, and high sensitivity.

The application relates to a graphene current sensor comprising a sleeve, an induction wire and a detection circuit, wherein the inner side of the sleeve is used to fix the wire under test; the induction wire is disposed outside the sleeve and is used to generate an induced voltage according to an induced current generated by the wire under test; the detection circuit is electrically connected tothe induction wire and is configured to detect the induced voltage generated by the induction wire, and calculate the current of the wire under test according to a preset mapping relationship betweenthe induced voltage and the current of the wire under test, wherein the induction wire is made of a graphene metal composite material. Using induction wires to detect the current of the wire under test does not produce magnetic saturation and expands the application range of graphene current sensors. In addition, the use of graphene metal composite induction wires can improve the strength and conductivity of traditional metal wires, so that the induction wires have the advantages such as low resistance temperature coefficient, good resistance to heat dissipation, and high sensitivity.

The invention belongs to the field of alloy wire manufacturing, and particularly discloses a precious metal alloy wire for a precision resistor and a manufacturing method thereof. The precious metal alloy wire contains gold, iron, aluminum, ytterbium and palladium, wherein the alloy wire containing the components has the advantages of high resistivity, low resistance temperature coefficient, stable resistance value, small resistance change range, good machining performance and the like; the manufacturing method comprises the steps that firstly, the gold, the iron, the aluminum, the ytterbium and the palladium are prepared and smelted to prepare a precious metal alloy rod; secondly, large deformation machining is carried out on the precious metal alloy rod to prepare a precious metal alloyrough wire, and then heat treatment is carried out on the precious metal alloy rough wire; and then wire drawing preparation, online heat treatment and fine machining are carried out to prepare a finished product of the precious metal alloy wire. The manufacturing method ensures the stability of the alloy components, and avoids the defects such as segregation, a transgranular structure, loosening,air holes generated in a traditional casting mode; and the large deformation machining ensures that the internal crystal grains are refined uniformly, the heat treatment enables alloy elements to befurther separated out, the internal crystal grain structure is stabilized, and the resistivity of the precious metal alloy wire is increased.

A radial coaxial integrated high-power-density inertia energy storage pulse power supply system relates to the technical field of inertia energy storage pulse power supplies. The invention aims to solve the problem that an existing traditional inertia energy storage pulse power supply system has large axial length, high mechanical noise, low power density and poor reliability due to the fact thata prime motor and a pulse generator are mechanically connected through a coupling and to solve the problem that the armature windings of the traditional system are made of copper wires and will be damaged due to the generation of a transient high current during discharging. An inner stator, a rotor and an outer stator are coaxially nested from inside to outside, an air gap exists between the innerstator and the rotor, and an air gap exists between the outer stator and the rotor. A motor armature winding and a generator armature winding are both made of copper-based carbon nanotube wires. Theradial coaxial integrated high-power-density inertia energy storage pulse power supply system is used as a pulse power supply.

The invention discloses an embedded type thick-film resistor strain sensor which is used for internal strain monitoring of a concrete structure. The embedded type thick-film resistor strain sensor comprises a stone substrate, a thick-film resistor area, a first electric conduction electrode area and a second electric conduction electrode area, wherein the thick-film resistor area is arranged on the lateral surface of the stone substrate, the first electric conduction electrode area is arranged on the lateral surface of the stone substrate and connected to one end of the thick-film resistor area, the second electric conduction electrode area is arranged on the lateral surface of the stone substrate and connected to the other end of the thick-film resistor area relative to the first electric conduction electrode area, a resistor electrode assembly is jointly formed by the second electric conduction electrode area, the first electric conduction electrode area and the thick-film resistor area, and wires are connected to the second electric conduction electrode area and the first electric conduction electrode area respectively. In addition, the invention further discloses a manufacturing method of the sensor. The embedded type thick-film resistor strain sensor has the advantages of being high in sensitivity, good in concrete matching performance, good in stability and good in durability.