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Method for preparing film strain sensor

A strain sensor and thin film technology, applied in the direction of using electric/magnetic devices to transmit sensing components, electric/magnetic solid deformation measurement, and measurement of the property and force of piezoresistive materials, can solve problems such as large stress environment and high strength

Active Publication Date: 2019-11-22
北京石墨烯技术研究院有限公司
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Problems solved by technology

[0004] Based on this, it is necessary to provide a thin-film strain sensor preparation method for the problem that the traditional graphene strain sensor cannot be applied to some high-strength or high-stress environments.

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  • Method for preparing film strain sensor
  • Method for preparing film strain sensor
  • Method for preparing film strain sensor

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preparation example Construction

[0045] See Figure 1-Figure 3 , the present application provides a method for preparing a thin film strain sensor. The preparation method of the thin film strain sensor includes: step S10, preparing a thin film insulating layer 10 on the metal substrate. Step S20 , forming a metal-sensitive thin film layer 20 on one side of the thin-film insulating layer 10 . Step S30 , forming the first adhesive layer 30 on the side of the metal sensitive thin film layer 20 away from the thin film insulating layer 10 . Step S40 , forming a graphene layer 40 on the side of the first adhesive layer 30 away from the metal sensitive film layer 20 . Step S50 , forming a second adhesive layer 50 on a side of the graphene layer 40 away from the first adhesive layer 30 . Wherein, the metal-sensitive film layer 20 , the first adhesive layer 30 , the graphene layer 40 and the second adhesive layer 50 have the same shape and are sequentially stacked to form a resistance grid and an electrode connecti...

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Abstract

The invention relates to a method for preparing a film strain sensor. The method comprises steps that a film insulating layer is prepared on a metal substrate. A metal sensitive film layer is formed on one side of the film insulating layer. A first bonding layer is formed on a side of the metal sensitive film layer away from the film insulating layer. A graphene layer is formed on a side of the first bonding layer away from the metal sensitive film layer. A second bonding layer is formed on a side of the graphene layer away from the first bonding layer. The metal sensitive film layer, the first bonding layer, the graphene layer and the second bonding layer have the same shape and are stacked in order to form a resistance grid and an electrode connection structure. The method is advantagedin that the film strain sensor can have the characteristics of both metal and graphene, so the film strain sensor has both excellent electrical conductivity and strong physical property, has advantages of high sensitivity and a wide range of installation environments and can be used in harsh environments such as acid and alkali, salt spray, and high and low temperature alternation.

Description

technical field [0001] The present application relates to the technical field of strain sensor preparation, in particular to a method for preparing a thin film strain sensor. Background technique [0002] Traditional metal film sensor resistors have the problems of high temperature coefficient, poor heat dissipation and low sensitivity coefficient. As a semi-metallic conductor material, graphene has four to five times the strain sensitivity of conventional metals, and has strong heat dissipation, so it can be used as an electronic sensitive material in many fields such as electronic information and sensor testing. [0003] However, due to the nonlinear characteristics of the measurement results of the traditional graphene strain sensor and the flexibility of graphene itself, it cannot be applied to some environments with high strength or high stress. Contents of the invention [0004] Based on this, it is necessary to provide a thin-film strain sensor preparation method f...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01B7/16G01L1/18G01D5/16
CPCG01B7/18G01D5/16G01L1/18
Inventor 李学瑞李文博李炯利王旭东
Owner 北京石墨烯技术研究院有限公司
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