45results about How to "Wide resistance range" patented technology

The invention discloses a data reading method for a resistance sensor array and belongs to the technical field of sensors. The method comprises following steps: S1. adding a line of n standard resistances with known resistance values into a M*N resistance sensor array sharing a line and alignment in advance to obtain a (M+1)*(N) resistance array sharing line and alignment; S2. by use of a multiplexer, grounding the kth line of the M*N resistance sensor array successively, connecting the other lines of the M*N resistance sensor array and the standard resistance line with an excitation voltage VI, and measuring the measuring voltage of the standard resistance line, and voltages of each line and each row; S3. according to the voltage data of each line and each row, calculating the resistance values of M*N resistance sensors in the resistance array. The invention also discloses a data reading device of a resistance sensor array and a sensor system. By use of the method and device, rapid detection of the resistance sensor array is realized and measurement precision and range are increased.

A resistor composition containing: a lead-free ruthenium-based electrically conductive component, a lead-free glass having a glass basicity (Po value) of 0.4 to 0.9, and an organic vehicle; wherein, MSi2Al2O8 crystals (M: Ba and / or Sr) are present in a thick film resistor obtained by firing this composition. The ruthenium-based resistor composition is capable of forming a lead-free thick film resistor which eliminates harmful lead components from an electrically conductive component and glass, and has superior TCR characteristics, current noise characteristics, withstand voltage characteristics and stability after a heat cycling test over a wide resistance range.

The invention relates to a high-performance carbon film resistor, and a preparation method thereof, and belongs to the technical field of thin film resistor. A carbon film slurry comprises, by weight, 15 to 25 parts of graphite, 8 to 16 parts of carbon black, 1 to 3 parts of phenolic resin, 2 to 5 parts of silicon dioxide, 1 to 3 parts of a binder, 2 to 3 parts of silver oxide, 3 to 5 parts of copper oxide, and 30 to 40 parts of propyl alcohol. The preparation method comprises following steps: graphite and carbon black are mixed, an obtained mixture is subjected to ball milling for 30 to 40min, and is subjected to sintering for 20 to 28min under nitrogen protection at 170 to 180 DEG C; the other raw materials are added, an obtained mixed product is subjected to ultrasonic treatment for 30 to 45min, and is delivered through a filter membrane with filtration pore diameter of 130 to 160<mu>m so as to obtain the carbon film slurry; a ceramic substrate is coated with the carbon film slurry via magnetron sputtering so as to obtain finished products, wherein acceleration voltage is controlled to be 300 to 340V, magnetic field intensity is controlled to be 200 to 300G, electric current density is controlled to be 50 to 60mA / cm, power density is controlled to be 30 to 40W / cm, film thickness is controlled to be 0.2 to 0.8<mu>m. The high-performance carbon film resistor possesses excellent performance, low negative temperature coefficient, and excellent high frequency characteristics; influences caused by voltage and frequency are low; noise electrodynamic potential is low; pulse load is stable; resistance range is wide; and production cost is low.

A resistor composition comprising: a lead-free ruthenium-based electrically conductive component, a lead-free glass having a glass basicity (Po value) of 0.4 to 0.9, and an organic vehicle; wherein, MSi2Al2O8 crystals (M: Ba and / or Sr) are present in a thick film resistor obtained by firing this composition. The ruthenium-based resistor composition is capable of forming a lead-free thick film resistor which eliminates harmful lead components from an electrically conductive component and glass, and has superior TCR characteristics, current noise characteristics, withstand voltage characteristics and stability after a heat cycling test over a wide resistance range.

The invention discloses a preparation method of thick-film hybrid circuit substrate side resistors, which comprises the following steps that layout is conducted: three kinds of side resistor are laid,the first side resistor is only positioned on the side surface of a substrate, and the second side resistor simultaneously spans over the side surface of the substrate and any one of the upper surface and the lower surface of the substrate, and the third side resistor simultaneously spans the side surface of the substrate and the upper and lower surfaces of the substrate; a negative film is drawnby light, a plate is made, the substrate is cut and cleaned, and a resistor is printed on the side surface of the substrate by a silk-screen printing process; silk-screen printing of glass glaze on the surface of the printed resistor is conducted; laser resistance trimming is conducted; epoxy insulation treatment is conducted on the back surface of the substrate to obtain the side resistor of thethick-film hybrid circuit substrate. Through the method, the resistor can be manufactured on the side surface of the substrate, the space of the ceramic substrate of the hybrid integrated circuit canbe effectively utilized, the space utilization rate is improved, the integration density is improved, and flexibility is brought to layout design.

The invention discloses a heating and atomizing structure of a miniature semiconductor heating atomizer and a manufacturing method thereof. The heating and atomizing structure comprises a substrate, a semiconductor electro-thermal film, an electrode I and an electrode II; a prepared semiconductor electro-thermal film treatment liquid is plated on a substrate in a high-temperature environment to form a semiconductor electro-thermal film, and then conductive silver paste is printed on the surface of the electro-thermal film to form an electrode through screen-printing; compared with the prior art, the heating and atomizing structure has the beneficial effects that the micro semiconductor heating atomizer is formed by one-time coating in an integral planar coating manner and can be industrially produced on a large scale, and a complicated process of winding, pressing and sintering a superfine resistance wire on a ceramic substrate is not needed; the electro-thermal film is wide in resistance range, can be applied to any voltage in a bearing range, can be made into any required power, is suitable for various occasions, and is free of open fire during heating, low in danger, long in service life and free of heavy metal harm; and the material is not easy to oxidize, has good temperature shock resistance and insulating property, and is safer and more reliable to use.

The invention discloses a resistive sensor array test circuit based on a two-wire equal-potential method, and belongs to the technical field of sensors. The test circuit is directed to an M*N two-dimensional resistive sensor array that shares row and column lines, and comprises a current feedback operational amplifier, N column line drive operational amplifiers, an equal current one-in-M multi-wayswitch, an equal potential one-in-M multi-way switch, N column line one-in-two multi-way switches, a test current setting resistor, a reference voltage source, and two connection lines set for each row and column lines of the resistive sensor array. The invention also discloses a test method of the test circuit and a sensing system. Compared with the prior art, the invention, by adopting the two-wire equal-potential method as the key technology, can effectively eliminate measurement errors caused by connecting the cable lead resistor, the cable connector contact resistor and the multi-way switch channel on-resistor, and greatly improve the measurement accuracy of the resistive sensor array.

The invention discloses a resistive sensor array fast readout circuit based on a two-wire system isopotential method, and belongs to the sensor technology field. By aiming at an M*N two-dimensional resistive sensor array sharing row lines and column lines, the fast readout circuit comprises a column multiplexer; a reference voltage source; M current feedback operational amplifiers and M testing current sample resistors, which are respectively corresponding to M row lines of the resistive sensor array; N column line driving operational amplifiers, which are respectively corresponding to N column lines of the resistive sensor array; and connecting wires. Each row line and each column line of the resistive sensor array are respectively provided with two connecting wires. The invention also discloses a readout method of the above mentioned fast readout circuit and a sensing system. Compared to the prior art, by adopting the two-wire system isopotential method as the key technology, the measurement errors generated by the connecting cable lead resistance, the cable joint contact resistance, and multi-way switch channel conduction resistance can be effectively eliminated, and therefore the measurement accuracy of the resistive sensor array can be greatly improved.

The invention discloses a resistive sensor array read-out circuit based on a two-wire system equipotential method, and belongs to the technical field of a sensor. The read-out circuit is applied to an M*N two-dimensional resistive sensor array sharing row wires and column wires and comprises an equivalent current driving operation amplifier, a column wire driving operation amplifier, a row multipath selector, a column multipath selector, a test current sampling resistor, a reference voltage source, and two connecting wires respectively arranged for each row wire and each column wire of the resistive sensor array. The invention further discloses a read-out method of the read-out circuit, and a sensing system. Compared to the prior art, a two-wire system equipotential method is taken as a key technology, measurement errors caused by connection with a cable lead wire resistor, a cable joint contact resistor and a multipath switch channel conduction resistor can be effectively eliminated, and the measurement precision of the resistive sensor array is substantially improved.

The invention belongs to the technical field of power batteries, and particularly relates to a composite resistor for a head cover of a power battery. The composite resistor comprises a conductive component A and an insulating plastic component B, wherein the resistance value of the composite resistor is 0.01-100,000ohm; and the heat-resistance temperature is greater than or equal to 150 DEG C. Compared with the prior art, the composite resistor formed by the conductive component A and the insulating plastic component B has the advantages that: on one hand, the heat-resistance temperature is high and the resistance value range is wide, so that the power battery still has good safety performance under the abuse conditions of box heating, nailing, overcharging and the like; and on the other hand, the composite resistor provided by the invention has extremely high plasticity and bending resistance in comparison with the resistor manufactured by ceramic materials of silicon carbide and the like, which are poor in consistency, high in cost, easy to break during assembly and the like, so that the composite resistor can be ground into a very thin sheet; and the height and the weight of a post terminal are reduced. Therefore, by the composite resistor, the safety performance of the power battery can be ensured and the volume energy density and the mass energy density of the battery can also be improved.

The invention discloses a low voltage arm shield integrated resistor for a high voltage pulse voltage divider. The low voltage arm shield integrated resistor is characterized in that an upper end cap and a lower end cap are respectively embedded in a resistor body, a middle conductor conducted with the lower end cap penetrates through the inner hole of the resistor body and the inner hole of the upper end cap so as to be connected and conducted with a leading-out terminal, a ground terminal, a shielding case and the upper end cap are fixed, connected and conducted by fixed screws, an inner sealing gasket and an outer sealing gasket are respectively arranged on the upper surface and the lower surface of a panel, a leading-in conductor penetrates through the panel and the lower end cap and is connected and conducted by screw threads, and the shielding case and the panel are fixed and fastened by a bolt. The low voltage arm shield integrated resistor has wide value of resistance, strong overload capacity, large impulse power, large impulse current, fast impulse response, and high work efficiency, has small attenuation for high-frequency impulse signal, low signal distortion factor, and strong antijamming capability, can be used in resistance-type high voltage pulse voltage divider on ultrahigh frequency pulse high voltage equipment and also can be used as an independent loading or current-limiting resistor in ultrahigh frequency pulse high voltage equipment; and as the input interface and the output interface are standard interfaces, the low voltage arm shield integrated resistor is convenient to use and maintain.

The invention discloses a fast readout circuit of a resistive sensor array based on a two-wire system isopotential method, and belongs to the technical field of sensors. For an M*N two-dimensional resistive sensor array that shares row and column lines, the fast readout circuit comprises a column line driving operational amplifier, a column multiplexer, a reference voltage source, M equivalent-current operational amplifiers and M test current sampling resistors which one-to-one correspond to M row lines of the resistive sensor array, and two connection lines respectively provided for each rowline and column line of the resistive sensor array. The invention further discloses a readout method of the above fast readout circuit and a sensing system. Compared with the prior art, in the fast readout circuit of the resistive sensor array based on the two-wire system isopotential method disclosed by the invention, the two-wire system isopotential method is adopted as a key technology, measurement errors generated by a connection cable lead resistance, a cable connector contact resistance and a multiple-switch channel on-resistance can be effectively eliminated, and the measurement accuracy of the resistive sensor array is greatly improved.

Disclosed are a carbon glue embedded resistance paste and a preparation method for a carbon glue embedded resistance material. The carbon glue embedded resistor paste comprises: a bonding resin, a conductive filler, a curing agent, accelerant, a coupling agent and stable accelerant, wherein the bonding resin is an O-Methyl phenolic epoxy resin; the conducting filler is a mixture of graphite and carbon black; and the stable accelerant is a mixture consisting of benzotriazole (BTA) and methylbenzotriazole (TTA). The method is a preparation method for the above-mentioned paste. Compared with the prior art, the carbon glue resistance material obtained according to the above-mentioned formula has the advantages of a wide range of resistance values, high accuracy, good environment stability, heat resistance and storage stability, and excellent mechanical performance, thereby meeting the requirements of material characteristics of embedding resistors in circuit boards well.

The invention discloses a data reading method for a resistance sensor array and belongs to the technical field of sensors. The method comprises following steps: S1. adding a line of n standard resistances with known resistance values into a M*N resistance sensor array sharing a line and alignment in advance to obtain a (M+1)*(N) resistance array sharing line and alignment; S2. by use of a multiplexer, grounding the kth line of the M*N resistance sensor array successively, connecting the other lines of the M*N resistance sensor array and the standard resistance line with an excitation voltage VI, and measuring the measuring voltage of the standard resistance line, and voltages of each line and each row; S3. according to the voltage data of each line and each row, calculating the resistance values of M*N resistance sensors in the resistance array. The invention also discloses a data reading device of a resistance sensor array and a sensor system. By use of the method and device, rapid detection of the resistance sensor array is realized and measurement precision and range are increased.

The invention discloses a low-temperature-coefficient resistance paste, which is composed of 20%-35% conductive powder, 25%-45% glass binder phase, 1%-5% Additives, 30% to 45% organic carrier; the conductive powder is at least one of ruthenium dioxide and lead ruthenate, and the glass bonding phase is lead borosilicate glass powder and barium feldspar in a muffle furnace Barium feldspar composite lead-borosilicate glass with a particle size of 0.7-1.3 μm after being kept at 450-500°C for 24 hours. The invention uses barite to modify the lead-borosilicate glass powder, and adjusts the temperature coefficient characteristics of the resistance, so that the resistance paste has the characteristics of small difference between positive and negative temperature coefficients, and can meet the requirements of high-precision resistance products.

The invention discloses a low voltage arm shield integrated resistor for a high voltage pulse voltage divider. The low voltage arm shield integrated resistor is characterized in that an upper end cap and a lower end cap are respectively embedded in a resistor body, a middle conductor conducted with the lower end cap penetrates through the inner hole of the resistor body and the inner hole of the upper end cap so as to be connected and conducted with a leading-out terminal, a ground terminal, a shielding case and the upper end cap are fixed, connected and conducted by fixed screws, an inner sealing gasket and an outer sealing gasket are respectively arranged on the upper surface and the lower surface of a panel, a leading-in conductor penetrates through the panel and the lower end cap and is connected and conducted by screw threads, and the shielding case and the panel are fixed and fastened by a bolt. The low voltage arm shield integrated resistor has wide value of resistance, strong overload capacity, large impulse power, large impulse current, fast impulse response, and high work efficiency, has small attenuation for high-frequency impulse signal, low signal distortion factor, and strong antijamming capability, can be used in resistance-type high voltage pulse voltage divider on ultrahigh frequency pulse high voltage equipment and also can be used as an independent loading or current-limiting resistor in ultrahigh frequency pulse high voltage equipment; and as the input interface and the output interface are standard interfaces, the low voltage arm shield integrated resistor is convenient to use and maintain.

A resistive device includes a resistive region of a semiconductor material that includes a first region and a second region, wherein the first region has a higher dopant concentration than the second region, and wherein a resistance-determining width of a current path through the first region is determined by a portion of a doping boundary between the first region and the second region.

The invention discloses a high wear-resistant resistance slurry. The mass percentage of the resistance slurry is composed of: conductive powder 15%-35%, glass bonding phase 25%-45%, additive 1%-8%, 30%-45% organic carrier, the conductive powder is graphite composite ruthenium dioxide, and the glass bonding phase is lead borosilicate glass powder with a softening temperature of 500-600°C. The resistance slurry of the invention has the characteristics of stable resistance value, good temperature coefficient and good wear resistance, and can meet the use requirements of glass glaze fine-tuning potentiometer products.