The invention relates to a high-performance
carbon film resistor, and a preparation method thereof, and belongs to the technical field of thin film
resistor. A
carbon film slurry comprises, by weight, 15 to 25 parts of
graphite, 8 to 16 parts of
carbon black, 1 to 3 parts of phenolic resin, 2 to 5 parts of
silicon dioxide, 1 to 3 parts of a binder, 2 to 3 parts of
silver oxide, 3 to 5 parts of
copper oxide, and 30 to 40 parts of propyl
alcohol. The preparation method comprises following steps:
graphite and
carbon black are mixed, an obtained mixture is subjected to ball milling for 30 to 40min, and is subjected to
sintering for 20 to 28min under
nitrogen protection at 170 to 180 DEG C; the other raw materials are added, an obtained mixed product is subjected to ultrasonic treatment for 30 to 45min, and is delivered through a filter membrane with
filtration pore diameter of 130 to 160<mu>m so as to obtain the
carbon film slurry; a
ceramic substrate is coated with the carbon film
slurry via magnetron
sputtering so as to obtain finished products, wherein
acceleration voltage is controlled to be 300 to 340V,
magnetic field intensity is controlled to be 200 to 300G,
electric current density is controlled to be 50 to 60mA / cm,
power density is controlled to be 30 to 40W / cm, film thickness is controlled to be 0.2 to 0.8<mu>m. The high-performance carbon film
resistor possesses excellent performance, low
negative temperature coefficient, and excellent
high frequency characteristics; influences caused by
voltage and frequency are low;
noise electrodynamic potential is low;
pulse load is stable; resistance range is wide; and production cost is low.