Heating and atomizing structure of miniature semiconductor heating atomizer and manufacturing method thereof

A heating atomization and production method technology, applied in the field of atomizers, can solve the problems of waste of electric energy, cumbersome production process, resistance value change of resistance wire, etc. The effect of a wide range of values

Inactive Publication Date: 2021-06-25
福建晶烯新材料科技有限公司
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing electronic cigarettes often use resistance wire type heating components, which need to wind and press extremely thin resistance wires on the ceramic substrate, resulting in difficulty in small-scale integration and cumbersome manufacturing process
The electric heat conversion efficiency of the resistance wire itself is low, only 55-65%, and most of the rest is converted into useless hot red light energy, a large amount of electric energy is wasted, which greatly affects the number of times of use
And it is easy to be oxidized, resulting in changes in the resistance value of the resistance wire, attenuation, power reduction, slow heating speed, and poor heating effect, so that the e-liquid cannot be completely heated and atomized, which seriously affects the use effect
After oxidation, the resistance wire becomes brittle and easy to break, resulting in permanent damage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Heating and atomizing structure of miniature semiconductor heating atomizer and manufacturing method thereof
  • Heating and atomizing structure of miniature semiconductor heating atomizer and manufacturing method thereof
  • Heating and atomizing structure of miniature semiconductor heating atomizer and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Step 1: Take 2 parts of tin tetrachloride pentahydrate and 3 parts of stannous chloride and mix thoroughly, then add 5 parts of glacial acetic acid, and stir at 8°C until all solid particles are dissolved; then add 0.3 parts of glycerin Continue stirring for 5 minutes to obtain component 1; take 5 parts of hydrochloric acid, add 5 parts of antimony trichloride dihydrate and 0.6 parts of aluminum chloride, and stir evenly at 15°C to obtain component 2; take 15 parts of ethanol, add oxidation Mix 0.5 part of tin and 0.8 part of bismuth oxide to obtain component three.

[0020] Step 2: add all components 1 and 2 obtained in step 1 into component 3, then slowly add 15 parts of distilled water, filter out solid particles after fully reacting, and obtain a semiconductor electrothermal membrane treatment solution with a good ratio; store Place it in a room at 15°C during use, and fully stir it at room temperature during use.

[0021] Step 3, heat the processed substrate to 38...

Embodiment 2

[0024] Step 1: Take 10 parts of tin tetrachloride pentahydrate and 6 parts of stannous chloride and mix thoroughly, then add 10 parts of glacial acetic acid and stir at 12°C until all solid particles are dissolved; then add 1 part of glycerol Continue stirring for 10 minutes to obtain component 1; take 10 parts of hydrochloric acid, add 10 parts of antimony trichloride dihydrate and 1 part of aluminum chloride, and stir evenly at 20°C to obtain component 2; take 25 parts of ethanol, add oxidation Mix 0.7 parts of tin and 1.5 parts of bismuth oxide to obtain component three.

[0025] Step 2: add all components 1 and 2 obtained in step 1 to component 3, then slowly add 30 parts of distilled water, and filter out solid particles after fully reacting to obtain a semiconductor electrothermal membrane treatment solution with a good ratio; store Place it in a room at 25°C when using it, and stir it well at room temperature when using it.

[0026] Step 3: Heat the processed substrate...

Embodiment 3

[0029] Step 1: Take 6 parts of tin tetrachloride pentahydrate and 4.5 parts of stannous chloride and mix thoroughly, then add 7.5 parts of glacial acetic acid and stir at 10°C until all solid particles are dissolved; then add 0.65 parts of glycerol Continue stirring for 7.5 minutes to obtain component 1; take 7.5 parts of hydrochloric acid, add 7.5 parts of antimony trichloride dihydrate and 0.8 parts of aluminum chloride, and stir evenly at 17.5°C to obtain component 2; take 20 parts of ethanol, add Mix 0.6 parts of tin oxide and 1.15 parts of bismuth oxide to obtain component three.

[0030] Step 2: add all components 1 and 2 obtained in step 1 to component 3, then slowly add 22.5 parts of distilled water, and filter out solid particles after fully reacting to obtain a semiconductor electrothermal membrane treatment solution with a good ratio; store Place it in a room at 20°C when using it, and stir it well at room temperature when using it.

[0031] Step 3, heat the proces...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a heating and atomizing structure of a miniature semiconductor heating atomizer and a manufacturing method thereof. The heating and atomizing structure comprises a substrate, a semiconductor electro-thermal film, an electrode I and an electrode II; a prepared semiconductor electro-thermal film treatment liquid is plated on a substrate in a high-temperature environment to form a semiconductor electro-thermal film, and then conductive silver paste is printed on the surface of the electro-thermal film to form an electrode through screen-printing; compared with the prior art, the heating and atomizing structure has the beneficial effects that the micro semiconductor heating atomizer is formed by one-time coating in an integral planar coating manner and can be industrially produced on a large scale, and a complicated process of winding, pressing and sintering a superfine resistance wire on a ceramic substrate is not needed; the electro-thermal film is wide in resistance range, can be applied to any voltage in a bearing range, can be made into any required power, is suitable for various occasions, and is free of open fire during heating, low in danger, long in service life and free of heavy metal harm; and the material is not easy to oxidize, has good temperature shock resistance and insulating property, and is safer and more reliable to use.

Description

technical field [0001] The invention relates to the technical field of atomizers, in particular to a micro-semiconductor heating atomizer heating atomization structure and a manufacturing method thereof. Background technique [0002] E-cigarettes are electronic products that mimic cigarettes and have the same look, smoke, taste and feel as cigarettes. It is a product that is powered by a rechargeable lithium polymer battery to drive the atomizer. By heating the e-liquid in the oil tank, it turns nicotine into vapor for users to smoke. Existing electronic cigarettes often use resistance wire type heating components, which need to be wound and pressed on the ceramic substrate with extremely thin resistance wires, which makes small-scale integration difficult and the manufacturing process is cumbersome. The electric heat conversion efficiency of the resistance wire itself is low, only 55-65%, and most of the rest are converted into useless hot red light energy, and a large amo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): A24F40/70A24F40/46
CPCA24F40/46A24F40/70
Inventor 罗浩杨小华蔡建财
Owner 福建晶烯新材料科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap