Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Two-dimensional material adjusting and controlling silicon-carbon composite structure hydrogen resisting coating and preparing method thereof

A two-dimensional material and two-dimensional structure technology, which is applied in the coating process of metal materials, coating, and plating of superimposed layers, etc., can solve problems such as poor hydrogen barrier performance and achieve excellent hydrogen barrier effect.

Inactive Publication Date: 2017-01-04
BEIHANG UNIV
View PDF5 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Li Shuai, Liu Xiaopeng and others invented the composite coating technology [patent application number: CN201210449522.0]. This method improves the hydrogen barrier properties to a certain extent. However, the hydrogen barrier properties of the above four traditional coatings are still poor and cannot meet the application requirements. needs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Two-dimensional material adjusting and controlling silicon-carbon composite structure hydrogen resisting coating and preparing method thereof
  • Two-dimensional material adjusting and controlling silicon-carbon composite structure hydrogen resisting coating and preparing method thereof
  • Two-dimensional material adjusting and controlling silicon-carbon composite structure hydrogen resisting coating and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] 1) The 316L stainless steel substrate was mechanically polished, then ultrasonically cleaned in acetone and alcohol for 15 minutes, and dried at 80°C.

[0045] 2) Take 4 mg of graphene powder, put it into 20 ml of organic solvent NMP, and add surfactant PVP, carry out ultrasonic dissolution for 2 hours, then use a centrifuge to centrifuge at 10000r / min for 3 minutes, and take the supernatant, which is the graphene dispersion.

[0046] 3) Spray the prepared graphene dispersion on the pre-treated 316L stainless steel by electrospraying process. The process parameters are: substrate temperature 150°C, distance between nozzle and substrate 9cm, voltage 3kV, spraying rate 1mL / h, The time is 10min, after spraying in 10 -6 Under Pa vacuum, perform annealing at 400° C. for 1 h to obtain a multilayer graphene film with a thickness of about 7 nm.

[0047] 4) The silicon-carbon composite layer was prepared by radio frequency magnetron sputtering method, the inert gas Ar was used ...

Embodiment 2

[0050] 1) The 316L stainless steel substrate was mechanically polished, then ultrasonically cleaned in acetone and alcohol for 15 minutes, and dried at 80°C.

[0051] 2) The silicon-carbon composite layer was prepared by radio frequency magnetron sputtering method, the inert gas Ar was used as the sputtering gas, the target material was high-purity SiC (99.99%), and the background vacuum degree was 5×10 -4 Pa, the working pressure is 0.5Pa, deposition at room temperature, sputtering power 170W, target base distance 100mm, sputtering time 3h, on the basis of the previous step, a silicon-carbon hydrogen barrier layer was prepared with a thickness of 800nm, and then its resistance was tested. Hydrogen properties;

[0052] 3) Copper foil is used as the substrate by chemical vapor deposition, methane is used as the carbon source, and the mixed gas of hydrogen and argon is used as the carrier gas to grow graphene at 1000 ° C, and then the prepared monolayer The graphene is transfer...

Embodiment 3

[0055] 1) The 316L stainless steel substrate was mechanically polished, then ultrasonically cleaned in acetone and alcohol for 15 minutes, and dried at 80°C.

[0056] 2) The silicon-carbon composite layer was prepared by radio frequency magnetron sputtering method, the inert gas Ar was used as the sputtering gas, the target material was high-purity SiC (99.99%), and the background vacuum degree was 5×10 -4 Pa, the working pressure is 0.5Pa, room temperature deposition, the sputtering power is 200W, the target base distance is 90mm, and the sputtering time is 1h, the silicon carbon hydrogen barrier layer is prepared with a thickness of 300nm.

[0057] 3) Weigh 500mg of sulfur powder and 10mg of molybdenum trioxide and place them in a 60*30 porcelain boat, place the treated substrate on the porcelain boat with molybdenum source, and then place the two porcelain boats in two In the two temperature zones in the temperature zone chemical vapor deposition tube furnace. The inert ga...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a two-dimensional material adjusting and controlling silicon-carbon composite structure hydrogen resisting coating. The two-dimensional material adjusting and controlling silicon-carbon composite structure hydrogen resisting coating is characterized in that a coating structure comprises a silicon-carbon compound and a two-dimensional material; a two-dimensional material coating is formed by stacking graphene of a two-dimensional structure or hexagonal boron nitride of a two-dimensional structure or molybdenum disulfide of a molybdenum disulfide layer by layer, the layer number ranges from 1 to 10, and the thickness of the two-dimensional material coating ranges from 0.34 nm to 28 nm; and the silicon-carbon compound is formed by sputtering a silicon carbide target material, and the thickness of the silicon-carbon compound ranges from 0.5 micron to 2 microns. A preparing method of the two-dimensional material adjusting and controlling silicon-carbon composite structure hydrogen resisting coating includes the step that the two-dimensional material is prepared by adopting a chemical vapor deposition (CVD) technology and an ion beam sputtering deposition (IBSD) technology and with the combination of an etching transferring technology. A composite coating technology is adopted and has a hydrogen resisting effect superior to that of a single coating; introduction of the two-dimensional material is brought forwards for the first time on the basis of an original silicon-carbon compound hydrogen resisting coating; and by the adoption of an existing technological method, composite structures of different forms are designed and prepared, and the layer number is taken into consideration.

Description

technical field [0001] The invention belongs to a new type of hydrogen-repellent permeation coating. On the basis of the traditional hydrogen-resistance coating of silicon-carbon composite structure, two-dimensional materials such as graphene, hexagonal boron nitride and molybdenum disulfide are introduced to control the coating. The hydrogen barrier properties, the application fields include hydrogen storage, transportation, solar heat collector tubes, nuclear reactor first wall structural materials, etc. Background technique [0002] Hydrogen and its isotopes have a high permeation rate in metals, but a low permeation rate in ceramic materials, and the permeation rate of hydrogen-resistant ceramic coatings is several orders of magnitude lower than that in metals. At present, covering the surface of structural materials with a hydrogen-resistant ceramic coating is one of the important technical means to solve the problem of hydrogen permeation. In recent years, the hydroge...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C28/04
CPCC23C28/04
Inventor 王玫牛栋华黄安平
Owner BEIHANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products