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Multi-element alloy thin-film resistor, preparation method and multi-element target material

An alloy thin film, multi-element technology, applied in the field of sensors, can solve problems such as large temperature coefficient of resistance, and achieve the effect of improving product yield and reducing production costs

Inactive Publication Date: 2017-01-04
北京埃德万斯离子束技术研究所股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a multi-element alloy thin-film resistor and its preparation method and multi-element target for the defect of the existing alloy thin-film resistor with a large temperature coefficient of resistance

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  • Multi-element alloy thin-film resistor, preparation method and multi-element target material

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Embodiment Construction

[0024] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0025] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relat...

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Abstract

The invention relates to a multi-element alloy thin-film resistor, a preparation method and a multi-element target material. The preparation method includes the following steps of preparing the multi-element target material containing nickel, chromium, manganese and silicon, fixing the target material to a target table, fixing a base material with prepared photoresist to a rotary working table, conducting vacuumizing to make the vacuum degree not larger than 5*10<-4> Pa, inflating an ion source with argon with working pressure intensity of 2.0*10<-2> Pa, conducting glow discharge to generate plasmas, conducting leading-out, bundling, accelerating and neutralizing to form an argon ion bundle to attack the multi-element target material on the target table, depositing sputtered particles on the surface of the base material to form a multi-element alloy thin film, and removing residual photoresist to obtain the multi-element alloy thin-film resistor. By means of the multi-element target material containing nickel, chromium, manganese and silicon, the resistance value of the thin-film resistor prepared through an ion bundle sputter deposition process can reach 200-700 kilohm; meanwhile, the resistance temperature coefficient is reduced to 5 ppm, and the production cost of the thin-film resistor is reduced.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to a multi-element alloy film resistor, a preparation method and a multi-element target. Background technique [0002] Nickel-chromium alloy thin film has the advantages of high resistivity, low temperature coefficient of resistance, high strain sensitivity coefficient, good thermal stability, easy preparation and mature technology. been widely used in. However, there are still the following problems in actual manufacturing: 1) when the thickness of the film is large, the film will fall off from the substrate due to excessive internal stress, which seriously affects the application of the film strain gauge; 2) the nickel-chromium film has a large resistance The temperature coefficient is not suitable for measuring strain in an environment with severe temperature changes. It is necessary to reduce the temperature coefficient of resistance of the film, especially the stress measureme...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/14C23C14/54C23C14/04C22C19/05H01C7/00H01C17/12
CPCC23C14/34C22C19/058C23C14/042C23C14/14C23C14/221C23C14/225C23C14/3414C23C14/545H01C7/006H01C17/12
Inventor 刁克明
Owner 北京埃德万斯离子束技术研究所股份有限公司
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