Method for preparing hexagonal boron nitride (h-BN) two-dimensional atomic crystal

Abstract

The invention provides a method for preparing a hexagonal boron nitride (h-BN) two-dimensional atomic crystal, which is characterized by comprising the following steps: introducing reducing gas into a reaction chamber, and carrying out in-situ annealing on a copper foil substrate to remove the surface oxide layer; and bombarding an h-BN target with an argon ion beam by an Ion Beam Sputtering Deposition (IBSD) process to deposit the h-BN two-dimensional atomic crystal on the copper foil substrate surface at high temperature. By regulating the growth conditions, the h-BN monocrystal domain with the dimension of 5 mu m or so can be obtained, and a high-quality h-BN continuous film can also be obtained by prolonging the growth time. The method solves the problems of excessive precursor pyrolysis byproducts, low controllability and the like in the CVD (chemical vapor deposition) process for preparing the h-BN two-dimensional atomic crystal, and provides a new way for preparing the large-area high-quality h-BN two-dimensional atomic crystal.

Description

technical field [0001] The invention relates to the technical field of nanomaterial preparation, in particular to a method for realizing the preparation of a two-dimensional atomic crystal of hexagonal boron nitride. Background technique [0002] Due to its unique electrical and optical properties, graphene has become a research hotspot in the field of electronic and optoelectronic devices and nanomaterials, and is expected to replace silicon as the basic material for next-generation semiconductors. However, due to the influence of the interface state of the substrate, the mobility of graphene on the substrate is usually difficult to reach the theoretical level. In addition, graphene devices are difficult to achieve large-scale integration due to the lack of suitable gate dielectric materials. Hexagonal Boron Nitride (h-BN) has a similar structure to graphene, with extremely high in-plane elastic modulus, high temperature stability, atomically smooth surface and very few su...

AI Technical Summary

Problems solved by technology

However, the CVD growth process is extremely complex, and various growth parameters are interrelated

More importantly, in the CVD growth of h-BN, it is difficult to select a suitable precursor. For example, gaseous diborane is a highly toxic gas, liquid borazine and solid borazine have poor stability and are easy to hydrolyze. And expensive, difficult to control

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