Pressure strain device manufactured by sputtering silicon film with ion beams and method thereof

Abstract

The invention relates to a pressure strain device manufactured by sputtering a silicon film with ion beams and a method thereof. The method comprises the following steps: firstly arranging a lead pressure connector and a metal elastic film integrated with the lead pressure connector; forming a first electric isolating layer on the metal elastic film by using a printing sintering method or sputtering method; forming a silicon film piezoresistive layer on the electric isolating layer by using an ion beam sputtering deposition method; etching a strain gage physical shape structure on the silicon film piezoresistive layer by using a superfine etching technology; and coating a medium sizing material on the piezoresistive layer to form a protection layer. According to the method, the pressure strain device is manufactured by sputtering the silicon film with ion beams and the silicon material is deposited layer by layer in nanometer scale, the formed film has excellent compactness and stability and the manufactured pressure strain device has high sensitivity, long service life and excellent stability. The process for manufacturing the electric isolating layer by adopting the printing sintering method is convenient, has high yield and is suitable for mass production.

Description

technical field [0001] The invention relates to a product manufacturing technology of a pressure sensor, in particular to a technical method for manufacturing a core component of a pressure sensor, that is, a pressure strain device, by ion beam sputtering silicon material. Background technique [0002] As a key device in the modern information industry, the pressure sensor's characteristics and uses mainly depend on the technology and process of its core component sensitive components. [0003] With the continuous development of modern industrial technology, the technology of sensitive components is changing with each passing day, which is mainly reflected in the use of elastomer components with different mechanical structures, or the use of various new materials, or the use of various new technology and means, and even based on innovation The physical principle and so on. [0004] Technologies and products based on metal resistance strain effect or semiconductor piezoresis...

AI Technical Summary

Problems solved by technology

It is well known that there are many deficiencies and shortcomings in the product performance of this type of technology: it is reflected in the fact that the glue is easy to age over time, resulting in a decrease in insulation performance, unstable bond strength, resulting in sensor creep, poor long-term stability, etc., especially in harsh environments such as high temperature and high temperature. Especially in wet and high-frequency pressure conditions; another significant disadvantage of metal foil strain gauges is low sensitivity, and its sensitivity coefficient is only 1 to 2 millivolts per volt; in the production process, repeatability is caused by the need for manual pasting. and poor consistency and inefficiencies in scale production

[0007] At present, ion beam sputtering deposited thin films are mainly used in traditional metal strain materials such as nickel-chromium alloy thin films, and its low sensitivity coefficient still exists. The low sensitivity coefficient of the strain gauge will inevitably require a higher output strain when the sensor elastic element is designed. , which will inevitably reduce the sensor's fatigue resistance and high overload impact resistance, and these are the performance requirements that modern industrial applications expect from sensors

[0008] In addition, when using the ion beam sputtering deposition thin film process to use metal materials as elastic components, it is necessary to make an electrical insulating layer to electrically isolate the strain layer from the base of the metal elastic component. The usual method is still to use ion beam sputtering insulating materials such as Silicon dioxide (SiO2), tantalum pentoxide (Ta2O5), or aluminum oxide (Al2O3), etc., but the sputtering time of such metal oxide materials is very long, usually more than eight hours for a thickness of 100 nanometers, and When using a thin film as an electrical isolation layer, the surface quality of the elastomer is required to be very high, meeting the requirements of a mirror surface without any surface microscopic defects such as scratches, pits, etc., which will inevitably require a very strict and complicated pretreatment on the surface of the elastic element Such as grinding and mirror polishing, etc., seriously affect production efficiency and yield, which is also the key reason why metal thin film pressure sensors are difficult to achieve mass production

[0009] As a material for pressure sensors, silicon has many excellent characteristics such as high sensitivity and stable crystal state. Its application is mostly based on silicon itself as the elastic material of diffused silicon oil-filled sensitive element technology, and there are also silicon materials grown on silicon by various physical and chemical vapor deposition methods. On the insulating film on the elastomer or metal elastic body (the insulating film is also formed by vapor deposition method such as silicon dioxide SiO2), but due to many shortcomings of the film made by this kind of thin film process, such as loose film formation and poor compactness Good, weak adhesion, etc. It is difficult to achieve commercialization and industrial mass production

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