Infrared broadband antireflection microstructure and preparation method thereof

A microstructure and anti-reflection technology, applied in the coating and other directions, can solve the problems of difficult preparation and processing, high refractive index, achieve high transmittance, and meet the needs of large aspect ratio.

Active Publication Date: 2018-10-26
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
View PDF3 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The refractive index of optical elements used in the infrared band is high. To achieve high transmission in the infrared wide band range, the he...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Infrared broadband antireflection microstructure and preparation method thereof
  • Infrared broadband antireflection microstructure and preparation method thereof
  • Infrared broadband antireflection microstructure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The present invention will be further described below in conjunction with the embodiments and accompanying drawings, but the protection scope of the present invention should not be limited thereby.

[0024] see figure 1 , figure 1 It is a schematic diagram of the infrared broadband anti-reflection microstructure of the present invention, as shown in the figure, including a substrate 1, a nanostructure array layer 2 and a single-layer low-refractive index layer 3 from bottom to top. In this example, the infrared window material is used as the preferred material, and microstructures are prepared on its surface, so as to increase its infrared broadband transmittance.

[0025] In this example, zinc selenide is selected as the base material. Zinc selenide is an optical material with good transmittance in the infrared band, and the sample needs to be polished on both sides.

[0026] Specifically, the preparation method of the broadband anti-reflection microstructure of this...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides an infrared broadband antireflection microstructure comprising a substrate, a nanostructure array layer and a low-refractive-index layer which are arranged from the bottom to the top in turn. The nanostructure array layer is provided with nanostructures which are perpendicular to the main axis of the surface of the substrate, and the cross section of the nanostructures has atriangular, conical, parabolic or Gaussian isogradient structure. A layer of low-refractive-index material is added to the nanostructure array, and the low-refractive-index layer is realized by the ion beam sputtering deposition technology or the electron beam evaporation ion beam auxiliary deposition technology so as to avoid water absorption. The thickness of the low-refractive-index layer is adjusted so that the broadband antireflection effect of the nanostructure array layer can be enhanced, high transmittance of broadband range can be realized and the transmitting curve is flatter.

Description

technical field [0001] The invention belongs to the field of optical anti-reflection, and in particular relates to a broadband anti-reflection microstructure applied in the infrared band and a preparation method thereof. Background technique [0002] In infrared optical components, the refractive index of the base material is relatively large, and the light energy is lost due to the reflection of the surface of the base material. In order to reduce the reflection loss of the surface, the currently commonly used method is to coat the surface of the base material with an anti-reflection coating. In the broadband range, anti-reflection requires many types of coating materials, multiple film layers, and thick film layers; it is affected by the evaporation characteristics of different materials. Due to the limitations, the film layer generally has low aggregation density and obvious water absorption. There are many types of coating materials, many layers, and thick layers, which...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G02B1/11
CPCG02B1/11
Inventor 崔云费亮赵元安朱美萍晋元霞易葵邵建达
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap