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Infrared broadband anti-reflection microstructure and its preparation method

A microstructure and anti-reflection technology, applied in the coating and other directions, can solve the problems of high refractive index, difficult preparation and processing, achieve high transmittance, and meet the needs of large aspect ratio.

Active Publication Date: 2019-08-13
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The refractive index of optical elements used in the infrared band is high. To achieve high transmission in the infrared wide band range, the height of the surface microstructure is generally much larger than the array period. This feature makes the actual preparation and processing difficult.

Method used

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  • Infrared broadband anti-reflection microstructure and its preparation method
  • Infrared broadband anti-reflection microstructure and its preparation method
  • Infrared broadband anti-reflection microstructure and its preparation method

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Embodiment Construction

[0023] The present invention will be further described below in conjunction with the embodiments and accompanying drawings, but the protection scope of the present invention should not be limited thereby.

[0024] see figure 1 , figure 1 It is a schematic diagram of the infrared broadband anti-reflection microstructure of the present invention, as shown in the figure, including a substrate 1, a nanostructure array layer 2 and a single-layer low-refractive index layer 3 from bottom to top. In this example, the infrared window material is used as the preferred material, and microstructures are prepared on its surface, so as to increase its infrared broadband transmittance.

[0025] In this example, zinc selenide is selected as the base material. Zinc selenide is an optical material with good transmittance in the infrared band, and the sample needs to be polished on both sides.

[0026] Specifically, the preparation method of the broadband anti-reflection microstructure of this...

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Abstract

The invention provides an infrared broadband antireflection microstructure comprising a substrate, a nanostructure array layer and a low-refractive-index layer which are arranged from the bottom to the top in turn. The nanostructure array layer is provided with nanostructures which are perpendicular to the main axis of the surface of the substrate, and the cross section of the nanostructures has atriangular, conical, parabolic or Gaussian isogradient structure. A layer of low-refractive-index material is added to the nanostructure array, and the low-refractive-index layer is realized by the ion beam sputtering deposition technology or the electron beam evaporation ion beam auxiliary deposition technology so as to avoid water absorption. The thickness of the low-refractive-index layer is adjusted so that the broadband antireflection effect of the nanostructure array layer can be enhanced, high transmittance of broadband range can be realized and the transmitting curve is flatter.

Description

technical field [0001] The invention belongs to the field of optical anti-reflection, and in particular relates to a broadband anti-reflection microstructure applied in the infrared band and a preparation method thereof. Background technique [0002] In infrared optical components, the refractive index of the base material is relatively large, and the light energy is lost due to the reflection of the surface of the base material. In order to reduce the reflection loss of the surface, the currently commonly used method is to coat the surface of the base material with an anti-reflection coating. In the broadband range, anti-reflection requires many types of coating materials, multiple film layers, and thick film layers; it is affected by the evaporation characteristics of different materials. Due to the limitations, the film layer generally has low aggregation density and obvious water absorption. There are many types of coating materials, many layers, and thick layers, which...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B1/11
CPCG02B1/11
Inventor 崔云费亮赵元安朱美萍晋元霞易葵邵建达
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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