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266 results about "Extreme ultraviolet lithography" patented technology
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Extreme ultraviolet lithography (also known as EUV or EUVL) is a next-generation lithography technology using a range of extreme ultraviolet (EUV) wavelengths, roughly spanning a 2% FWHM bandwidth about 13.5 nm. In August 2019, Samsung announced the use of EUV for its own 7nm Exynos 9825 chip. However, yield issues have been a concern. ASML, the sole EUV tool supplier, reported in June 2019 that pellicles required for critical layers still required improvements. In September 2019, Huawei announced a 5G version of its Kirin 990 chip that was made in a TSMC 7nm process with EUV, as well as a non-5G version that was made in a conventional TSMC 7nm process; however, the release dates for the first phones to use the Kirin 990 chips have not been confirmed yet; in October, TSMC announced products were shipping. TSMC had indicated in the first quarter of 2019 that EUV-generated N7+ revenue would amount to no more than 1 billion TWD (32 million USD) in 2019. For 2020, more focus is being placed on more extensive use of EUV for "5nm" or "N5," although cost per transistor is still a concern.
Adamantane structure-based polybenzyl chloride type monomolecular resin photoresist as well as preparation method and application thereof
PendingCN120271411AOrganic compound preparationHalogenated hydrocarbon preparationBenzyl chlorideBenzyl group
The invention provides a polybenzyl chloride type monomolecular resin photoresist based on an adamantane structure as well as a preparation method and application of the polybenzyl chloride type monomolecular resin photoresist. According to the invention, the advantages of non-chemically amplified photoresist and monomolecular resin are combined, and a series of monomolecular resin based on adamantane core and periphery grafted benzyl chloride groups are synthesized. The series of compounds are simple in synthesis process, have very high thermal stability and good film-forming property, and can meet the requirements of a photoresist process. Electron beam and extreme ultraviolet lithography show that the series of photoresist materials are expected to meet the requirement of high-resolution lithography.
Owner:TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
Add-on component, optical element and system of semiconductor technology
PendingDE102024205314A1MirrorsPhotomechanical exposure apparatusSemiconductor technologyMaterials science
The invention relates to an attachment (25) for an optical element, in particular for an EUV mirror, comprising: a plurality of projections (31) with connecting surfaces (30) for establishing a material-bonded connection, in particular an adhesive bond, with the optical element. In the attachment (25), at least one connecting surface (30), and in particular all connecting surfaces (30), are substantially circular. The invention also relates to an optical element, in particular an EUV mirror, comprising: a base body, and at least one attachment (25) configured as described above, wherein the attachment (25) is connected to the base body at the connecting surfaces (30) via a material-bonded connection, in particular an adhesive bond. The invention also relates to a semiconductor technology system, in particular an EUV lithography system, which has at least one such optical element.
Owner:CARL ZEISS SMT GMBH
Coherent modulation detection device and method for extreme ultraviolet lithography mask phase defect
PendingCN120386139AOriginals for photomechanical treatmentComplex mathematical operationsPhotovoltaic detectorsFull field
The invention discloses a coherent modulation detection method and device for extreme ultraviolet lithography mask phase defects. High-precision full-field reconstruction of nanoscale phase defects is realized through an iterative algorithm. The device adopts a compact extreme ultraviolet light source to generate high-brightness coherent light, focusing probe light is reflected by a multi-layer film focusing optical device and enters a mask at a Bragg angle, the reflected light carries phase defect information, the defect information is coded into an intensity signal through amplitude-phase dual modulation of a modulator, a photoelectric detector collects a diffraction pattern, and the diffraction pattern is detected by a detector. Inputting an iterative algorithm; and finally realizing the quantitative reconstruction of the phase defect by combining support constraint with an error amplification coefficient, ensuring the convergence of the algorithm, modulating a forward propagation simulation light field, correcting the calculated light field by amplitude constraint, demodulating a reverse propagation simulation light field, and finally realizing the quantitative reconstruction of the phase defect. The device is suitable for online detection of the extreme ultraviolet mask, and has the advantages of strong anti-noise capability, good algorithm convergence, low requirement on the dynamic range of a detector and the like.
Owner:SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Resist composition and patterning process
PendingUS20250244666A1Photomechanical exposure apparatusPhotosensitive material processingLithography processImage resolution
The non-chemically-amplified resist composition exhibits a high sensitivity and maximum resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography. The resist composition comprises a hypervalent iodine compound, a carboxy-containing polymer, and a solvent is provided. When processed by photolithography using high-energy radiation, the resist composition exhibits a high sensitivity and resolution.
Owner:SHIN ETSU CHEMICAL CO LTD
A Radiation Enhancement Control Method for LPP-EUV Light Sources Based on Dual-Pulse Spatiotemporal Co-constraints
PendingCN122085516ABreak through performance bottlenecksImprove conversion efficiencyImage enhancementPhotomechanical exposure apparatusOptical axisMiniaturization
This invention discloses a method for enhancing and controlling the radiation of an LPP-EUV light source based on dual-pulse spatiotemporal co-constraint, belonging to the field of semiconductor manufacturing technology. This invention obtains a spatiotemporal reference by real-time monitoring of a liquid metal droplet, uses a pre-pulse laser to induce target material deformation into a fogged target cloud, and combines high-speed imaging and a hydrodynamic model to predict the time and coordinates of the target cloud's energy absorption peak. It dynamically adjusts the delay time and optical axis direction of the main pulse laser to achieve dual-pulse spatiotemporal co-constraint, and constructs a closed-loop control system through a recursive least squares algorithm with a dynamic forgetting factor. This invention effectively improves the extreme ultraviolet light conversion efficiency, controls the power fluctuation of the light source within ±0.5%, and extends the maintenance cycle of optical components by 2 times. It can be widely applied to next-generation high-power extreme ultraviolet lithography light source systems, meeting the application requirements of semiconductor miniaturization processes.
Owner:MYNICE OPTOELECTRONICS CO LTD
Optical assembly with coating and methods of use
Coated nanotubes and bundles of nanotubes are formed into membranes useful in optical assemblies in EUV photolithography systems. These optical assemblies are useful in methods for patterning materials on a semiconductor substrate. Such methods involve generating, in a UV lithography system, UV radiation. The UV radiation is passed through a coating layer of the optical assembly, e.g., a pellicle assembly. The UV radiation that has passed through the coating layer is passed through a matrix of individual nanotubes or matrix of nanotube bundles. UV radiation that passes through the matrix of individual nanotubes or matrix of nanotube bundles is reflected from a mask and received at a semiconductor substrate.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Method for removing defects on extreme ultraviolet lithography photomask
The embodiment of the invention provides a method for removing defects on an extreme ultraviolet lithography photomask. The method comprises the following steps. An extreme ultraviolet lithography mask having at least one defect on the extreme ultraviolet lithography mask is received, in which the absorption layer and the pattern layer collectively form a pattern having a covered portion and an exposed portion on the capping layer, and the at least one defect forms a shaded region in the exposed portion on the capping layer. In the etch chamber, a directional etch process is performed on the at least one defect at a first acute angle to reduce the at least one defect located on the extreme ultraviolet lithography mask by etching the particles. The directional etching process continues to be performed on the at least one defect at a second acute angle to completely remove the at least one defect, where the second acute angle is greater than the first acute angle. The EUV photomask has the advantage that the EUV photomask can be quickly repaired without damaging the covering layer, the absorbing layer and the pattern layer.
Owner:NAN YA TECH
Methods for forming and utilizing antimony containing films, and related structures
ActiveUS12624450B2Chemical vapor deposition coatingPhotosensitive materials for photomechanical apparatusLithography processPhysical chemistry
Systems and methods for forming an antimony containing film on a substrate. Related structures and films are also disclosed. The antimony films are be formed by a plasma enhanced atomic layer deposition process. The antimony films can be utilized as underlayers in EUV lithography processes.
Owner:ASM IP HLDG BV
A hydrogen curtain gas supply shunting device for an extreme ultraviolet lithography machine light source cabin
The application discloses a hydrogen curtain gas supply shunting device for a light source bin of an extreme ultraviolet lithography machine, and the hydrogen curtain gas supply shunting nozzle is divided into two paths by a partition plate, one path of the gas flow channel is outward, and the other path of the gas flow channel is forward; the outward gas flow channel generates a component parallel to a mirror surface of a collecting mirror and the component direction flows away from a symmetry axis and points to an outer edge of the collecting mirror; the forward gas flow channel is parallel to a symmetry axis surface of the collecting mirror and the direction is forward; the hydrogen gas flow of the outward gas flow channel removes tin drop residues adsorbed on the mirror surface of the collecting mirror near an inner edge; the forward gas flow channel balances a circulation generated by the aforementioned outward channel and prevents the generation of a backflow area, thereby avoiding the secondary pollution caused by tin drop debris carried in the backflow area and returned to the collecting mirror; and the application ensures the formation of a stable hydrogen curtain without backflow near a main focal point of the collecting mirror and avoids the risk of secondary pollution.
Owner:INST OF MECHANICS CHINESE ACAD OF SCI
Vacuum bake for EUV lithography
A method and apparatus for performing post-exposure bake operations is described herein. After exposure of photoresist on a substrate, the substrate is heated during a baking process to facilitate protection of the resist. The baking process is performed in a vacuum environment at sub-atmospheric pressures. After baking at reduced pressure, the substrate is cooled. The cooling process is performed at sub-atmospheric pressures. Further development of the resist is performed at ambient pressures.
Owner:APPLIED MATERIALS INC
Pattern Forming Method And Laminate
PendingUS20250246429A1Semiconductor/solid-state device manufacturingPhotomechanical exposure apparatusPhoto irradiationRefractive index
The present invention is a pattern forming method using EUV lithography, the pattern forming method including steps of: forming a resist upper layer film on at least one surface side of a substrate; irradiating the resist upper layer film with EUV light; and developing the resist upper layer film to form a pattern, wherein a multilayer reflective film layer is disposed between the substrate and the resist upper layer film, and the multilayer reflective film layer has a structure in which two or more materials different in refractive index n at a wavelength of the EUV light are alternately laminated. The present invention provides: a pattern forming method and a laminate that can contribute to sensitivity enhancement while maintaining LWR of a resist upper layer film are provided.
Owner:SHIN ETSU CHEMICAL CO LTD
Extreme ultraviolet laminated diffraction imaging method based on iterative frequency mask
ActiveCN120927618AMethod using image detector and image signal processingScattering properties measurementsAdaptive learningExtreme ultraviolet
The invention discloses an extreme ultraviolet laminated diffraction imaging method based on an iterative frequency mask. Comprising the steps that an extreme ultraviolet coherent light source is used for scanning and irradiating a to-be-reconstructed target, and diffraction intensity patterns of all scanning positions are collected; obtaining an initial probe function and an initial reconstruction target function according to the position information of all the scanning positions and the diffraction intensity pattern; meanwhile, an auxiliary variable tensor, a Lagrange multiplier tensor and an adaptive learning rate are initialized; constructing a multi-level spatial frequency mask; according to diffraction intensity patterns of all scanning positions, a multi-level spatial frequency mask is used for updating the probe function step by step from low frequency to high frequency, a target function, an auxiliary variable tensor and a Lagrange multiplier tensor are reconstructed, and the obtained optimal probe function and the optimal reconstruction target function serve as reconstruction results. The method has remarkable advantages in the aspects of reconstruction quality, convergence speed and robustness to low lamination rate and high noise environment, and has important application value for lamination diffraction imaging.
Owner:ZHEJIANG UNIV
Methods, structures, and systems for lithographic patterning
PendingUS20250377598A1Electric discharge tubesPhotomechanical coating apparatusDeposition processExtreme ultraviolet
Methods, related structures, and related systems are provided for lithography, particularly extreme ultraviolet (EUV) lithography. Presently disclosed methods can comprise forming a carbon underlayer having a high sp3 carbon content. Presently disclosed methods can comprise forming a carbon underlayer by a deposition process that comprises continually generating a plasma and providing a precursor in a sequence of discrete pulses.
Owner:ASM IP HLDG BV
Low-expansion glass-ceramics, preparation method and application thereof
ActiveCN119859023BGlass shaping apparatusPhotomechanical exposure apparatusTransmittanceThermal expansion
The present invention discloses a low-expansion glass-ceramic, a preparation method, and applications thereof. The low-expansion glass-ceramic comprises the following components by weight: 56-67% SiO2, 18-27% Al2O3, 3.1-7.0% Li2O, 0.1-0.5% MgO, 0.1-0.9% ZnO, 1.0-2.9% P2O5, 1.0-2.9% TiO2, 1.0-2.9% ZrO2, 0.5-4% Gd2O3, 0.6-1.5% SnO2, and 0.1-0.4% CaF2. The low-expansion glass-ceramic prepared by the present invention has excellent properties such as a low thermal expansion coefficient and good visible light transmittance. The low-expansion glass-ceramic prepared by this method can be used in the field of extreme ultraviolet lithography.
Owner:LUMISING SPECIAL GLASS TECH CO LTD
Glass substrate and mask blank for EUV lithography
PCT designated stageWO2026074953A1Originals for photomechanical treatmentThermal deformationThermal expansion
Provided is a glass substrate that reduces errors in the correction of thermal deformation. This glass substrate has a rectangular main surface (MS1). When the main surface is divided into nine equal parts in a direction perpendicular to a first side (S1) and divided into nine equal parts in a direction perpendicular to a second side (S2), thereby dividing the main surface into a group of 81 rectangular regions (A11-A99), the rectangular regions, in the group of 81 rectangular regions, the centers of which are located on a diagonal line of the main surface passing through a first vertex (P1) that is an intersection point of the first side and the second side, satisfy expression (1A), where TZ11、TZ22、TZ33、TZ44、TZ55、TZ66、TZ77、TZ88、and TZ99 are zero crossover temperatures in ˚C, at which the thermal expansion coefficient of the glass substrate becomes 0 ppb / K, starting from the closest to the first vertex. (1A): (TZ11+TZ99)-(TZ22+TZ88)＜0.00
Owner:AGC INC
Extreme ultraviolet lithography projection exposure optical system and method
ActiveCN119472184BPhotomechanical exposure apparatusMicrolithography exposure apparatusProjection opticsLight beam
The application relates to the field of projection optical technology, in particular to an extreme ultraviolet lithography projection exposure optical system and method, and provides an ultraviolet lithography projection exposure optical system which comprises a light field uniformity adjusting module, the light field uniformity adjusting module is respectively connected with a light beam generating module and a light beam shaping module in signal connection; the light field uniformity adjusting module is used for acquiring extreme ultraviolet light beam intensity distribution data output by the light beam shaping module; is also used for adjusting the output power of the light beam generating module according to the light intensity distribution data, so that the lowest light intensity in the extreme ultraviolet light beam intensity distribution data output by the light beam shaping module after power adjustment is not lower than a target light intensity; and is also used for adjusting the light transmittance of a gradual attenuation piece in the extreme ultraviolet light beam shaping module according to the extreme ultraviolet light beam intensity distribution data output by the light beam shaping module after power adjustment, so that the light intensity difference of any two positions in the extreme ultraviolet light beam intensity distribution data output by the light beam shaping module after transmittance adjustment does not exceed a difference limited range.
Owner:JIANGSU OCEAN UNIV
System and method for monitoring and controlling extreme ultraviolet photolithography processes
ActiveDE102021101906B4Semiconductor/solid-state device manufacturingPhotomechanical exposure apparatusControl systemCharged particle detectors
Photolithography system, comprising: a plasma generation chamber (101); a droplet generator (108) configured to deliver a stream of droplets (142) into the plasma generation chamber; a laser (102) configured to generate a plasma from the droplets by irradiating the droplets in the plasma generation chamber; one or more first charged particle detectors configured to detect the speed, intensity, and / or energy of the charged particles ejected from the plasma and to output first sensor signals indicative of the charged particles; and a control system (114) configured to receive the first sensor signals, analyze the first sensor signals, and adjust plasma generation parameters based at least in part on the first sensor signals.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Method of preventing pattern collapse
ActiveUS12638773B2Photomechanical exposure apparatusMicrolithography exposure apparatusMicrofabricationThin membrane
A method of microfabrication includes forming a sacrificial layer over a film. A resist layer is formed over the sacrificial layer. The resist layer includes an extreme ultraviolet (EUV) resist. A pattern is formed in the resist layer by an EUV exposure and a wet etch followed by rinsing and drying, resulting in uncovered portions of the sacrificial layer. The uncovered portions of the sacrificial layer are treated. The pattern is transferred from the resist layer to the film by performing an etch process.
Owner:TOKYO ELECTRON LTD
Disc Mmyshev mode-locked laser
The invention discloses a disc Mmyshev mode-locked laser, and belongs to the technical field of ultrafast laser. The disc Mmyshev mode-locked laser comprises a laser gain module, a first nonlinear medium, a second nonlinear medium, a first interference filter, a second interference filter, a dispersion compensation module, an output coupling mirror, a first concave reflecting mirror, a second concave reflecting mirror, a high reflecting mirror, a third concave reflecting mirror and a fourth concave reflecting mirror. According to the disc Mmyshev mode-locked laser, a Mmyshev filtering mechanism is introduced into the disc Mmyshev mode-locked laser, and mode-locked self-starting and ultra-short pulse output under the condition of high average power are achieved. The disc Mmyshev mode-locked laser does not need an SESAM or Kerr mode-locked medium, can obtain stable ultrashort pulses smaller than 100 femtoseconds, has high stability, self-starting, good beam quality and structural expandability, and is suitable for application fields such as precise micromachining and extreme ultraviolet lithography driving sources.
Owner:SHENZHEN TECH UNIV
Method for producing at least one hollow structure, mirror, and EUV lithography system
The invention relates to a method for producing a hollow structure (28) in a workpiece (25) in the form of a substrate for a mirror, in particular for an EUV mirror (M4), by material removal using pulsed laser radiation (35), comprising: illuminating the workpiece (25), which is made of a material transparent to the pulsed laser radiation (35), from a radiation entry side (27), focusing the pulsed laser radiation (35) in a focus area (39), forming a removal front (46) for the planar removal of material from the workpiece (25) by moving the focus area (39) along a movement pattern (41), and producing the hollow structure (28) by moving the removal front (46) within the workpiece (25), wherein a removal front (46) is formed at least temporarily during the production of the hollow structure (28).which is not oriented perpendicular to an incident direction (Z) of the pulsed laser radiation (35) on the radiation entry side (27) of the workpiece (25), and wherein the hollow structure is created in the form of a channel through which a fluid can flow. The invention also relates to a mirror, in particular an EUV mirror, and an EUV lithography system.
Owner:CARL ZEISS SMT GMBH
Pellicle for extreme ultraviolet lithography based on metal carbide nanotubes and method for manufacturing the same
Proposed is a pellicle for extreme ultraviolet (EUV) lithography based on metal carbide nanotubes having excellent optical properties, such as EUV transmittance, as well as chemical durability required in the EUV lithography environment. The pellicle may include a frame having an opening formed in a central portion thereof, and a porous pellicle layer supported by the frame, covering the opening, and formed with a mesh structure based on metal carbide nanotubes. A method for manufacturing the pellicle is also proposed.
Owner:KOREA ELECTRONICS TECH INST
Aerodynamic seal nozzle for an extreme ultraviolet lithography machine
The application discloses a kind of pneumatic seal nozzle for extreme ultraviolet lithography machine, which is based on a kind of hydrogen curtain gas supply system for extreme ultraviolet lithography machine, the system is arranged in the outer edge, inner edge and center ring of extreme ultraviolet light collection mirror, three groups of independent controllable hydrogen nozzle;Its characteristics are: the pneumatic seal nozzle in the form of Laval nozzle with throat arranged in the center of extreme ultraviolet light collection mirror, the high-speed flow generated by it is used to form the cross-seam pneumatic seal in the form of backflow zone at the gap between laser chamber and collection mirror assembly, the scale of backflow zone is in the same geometric order with the cross-seam width, so that the leakage of laser chamber gas supply at the gap is weakened by one order of magnitude;The application integrates the pneumatic seal nozzle in the form of Laval nozzle with throat at the gap between laser chamber and collection mirror assembly, reduces the hydrogen leakage flow to about 5% without device, greatly reduces gas loss, and reduces the working pressure of gas pressure maintenance pump set.
Owner:INST OF MECHANICS CHINESE ACAD OF SCI
Particle image velocimetry of extreme ultraviolet lithography systems
PendingUS20250334606A1Photomechanical exposure apparatusX-ray tube with very high currentExtreme ultravioletMechanical engineering
A method includes irradiating a target droplet in an extreme ultraviolet (EUV) light source of an extreme ultraviolet lithography tool with non-ionizing light from a droplet illumination module. The method further includes detecting light reflected and / or scattered by the target droplet, and performing particle image velocimetry, based on the detected light, to determine a velocity of the target droplet. The method also includes adjusting a time delay between a generation of the target droplet and a generation of an excitation laser beam based on the velocity of the target droplet.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Crosslinkable photoresist for extreme ultraviolet lithography
PendingUS20250362606A1Semiconductor/solid-state device manufacturingPhotomechanical exposure apparatusDevice materialCross linker
A method for forming a semiconductor device is provided. The method includes forming a photoresist layer over a substrate, exposing the photoresist layer to radiation to form a pattern therein, and selectively removing portions of the photoresist layer that are not exposed to the radiation to form a patterned photoresist layer. The photoresist layer comprises a fluorine-containing polymer, a crosslinker and a photoactive compound.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Method for predicting the lifetime of EUV pellicles
PendingUS20260110593A1Phase-affecting property measurementsTransmissivity measurementsRefractive indexLight beam
A method for predicting the lifetime of an EUV pellicle includes a) acquiring transmittance data of an EUV pellicle over a wavelength band ranging from an infrared region to an ultraviolet region, b) acquiring complex refractive index data of the EUV pellicle over the wavelength band ranging from the infrared region to the ultraviolet region, c) acquiring information on the relationship between density and transmittance of the EUV pellicle as a function of wavelength, and d) measuring the transmittance of the EUV pellicle for at least one measurement beam having a wavelength within the wavelength band, extracting an estimated density of the EUV pellicle on the basis of the measured transmittance and the information on the relationship between density and transmittance acquired in the step c), and predicting a remaining lifetime of the EUV pellicle on the basis of the estimated density.
Owner:FINE SEMITECH
Photo-etching system and photo-etching method
ActiveCN113267962BPhotomechanical exposure apparatusMicrolithography exposure apparatusOptical radiationMetallic materials
An optical lithography system for controlling a plasma location in an extreme ultraviolet lithography light source can include a vacuum chamber; a droplet generator to dispense a stream of droplets into the vacuum chamber, wherein the droplets are formed of a metallic material; a laser light source to emit a plurality of laser pulses including at least a first pulse and a second pulse into the vacuum chamber; a sensor to detect an observed plasma location within the chamber, wherein the observed plasma location includes a location at which the plurality of laser pulses vaporize a droplet of the stream of droplets to generate a plasma that emits extreme ultraviolet light radiation; and a first feedback loop connecting the sensor to the laser light source, wherein the first feedback loop adjusts a time delay between the first and second pulses to minimize a difference between the observed plasma location and a target plasma location.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Point-of-use blending of rinse solutions for EUV processing to mitigate pattern collapse
ActiveUS12393121B2Semiconductor/solid-state device manufacturingPhotomechanical exposure apparatusWaferPhysical chemistry
Embodiments provide point-of-use blending of photoresist rinse solutions for patterned photoresists. Disclosed methods and systems form different mitigation solutions for multiple different photoresists through point-of-use variable blending of a mitigation solution with de-ionized water and / or other chemistries to adjust the formulation of the solution just prior to dispense within a process chamber. For one example embodiment, different surfactant rinse solutions are used for different photoresists, such as different extreme ultraviolet photoresists. In addition, the level of reactive components, the level of nonreactive components, or both within a mitigation solution can be adjusted using this point-of-use blending to provide an adjusted mitigation solution. The ability to make point-of-use adjustments to the solution chemistry just before dispense on a microelectronic workpiece, such as a semiconductor wafer, improves interactions between the adjusted mitigation solution and the patterned photoresist.
Owner:TOKYO ELECTRON LTD
Pellicle comprising silicon carbide nanostructure and related devices and methods
Disclosed are pellicles for use in extreme ultraviolet (EUV) lithography, the pellicles comprising silicon carbide nanostructures, and exhibiting high transmittance of EUV exposure light and high mechanical strength, as well as methods of using these pellicles.
Owner:ENTEGRIS INC
Semiconductor processing tool and method of using the same
ActiveUS12461454B2Photomechanical exposure apparatusX-ray tube with very high currentEngineeringSemiconductor
A plurality of hydrogen outlets are arrayed along a direction normal to a surface (such as a surface of a collector) of an extreme ultraviolet lithography (EUV) tool to increase a volume of hydrogen gas surrounding the surface. As a result, airborne tin is more likely to be stopped by the hydrogen gas surrounding the surface and less likely to bind to the surface. Fewer tin deposits results in increased lifetime for the surface, which reduces downtime for the EUV tool. Additionally, a control device may receive (e.g., from a camera and / or another type of sensor) an indication of levels of tin contamination on the surface and control flow rates to adjust a thickness of the hydrogen curtain. As a result, tin contamination on the collector is less likely to occur and will be more efficiently cleaned by the hydrogen gas, which results in increased lifetime for the surface and reduced downtime for the EUV tool.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Pellicle for an EUV lithography mask and a method of manufacturing thereof
A pellicle for a reflective photo mask includes a frame, a core layer having a front surface and a rear surface, and disposed over the frame, a first capping layer disposed on the front surface of the core layer, an anti-reflection layer disposed on the first capping layer, a barrier layer disposed on the anti-reflection layer, and a heat emissive layer disposed on the barrier layer.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD