Zinc antimonide-based thermoelectric film and preparation method thereof

A technology of thermoelectric thin film and zinc antimonide, which is applied in vacuum evaporation coating, coating, sputtering coating, etc., can solve the problems of difficult to obtain high performance and high cost, achieve good adhesion and repeatability, and increase content , the effect of strong technical controllability

Active Publication Date: 2014-02-12
SHENZHEN UNIV
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Problems solved by technology

[0007] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a zinc antimonide-based thermoelectric thin film and its

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  • Zinc antimonide-based thermoelectric film and preparation method thereof
  • Zinc antimonide-based thermoelectric film and preparation method thereof
  • Zinc antimonide-based thermoelectric film and preparation method thereof

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Embodiment Construction

[0023] The present invention provides a zinc antimonide-based thermoelectric thin film and a preparation method thereof. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0024] like figure 1 as shown, figure 1 The flow chart of the preferred embodiment of the preparation method of the zinc antimonide base thermoelectric thin film provided by the present invention, it mainly adopts ion beam sputtering deposition method to plate a layer of Sb thin film layer on the insulating substrate, then on the Sb thin film A layer of Zn film layer is plated on the Zn film layer, and finally a layer of Sb film layer is plated on the Zn film layer to form a laminated alloy film with a "Sb-Zn-Sb" structure. Under the co...

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Abstract

The invention discloses a zinc antimonide-based thermoelectric film and a preparation method thereof. The preparation method comprises the following steps of plating a Sb film layer on an insulating substrate by an ion beam sputtering deposition method, plating a Zn film layer on the Sb film layer, plating a Sb film layer on the Zn film layer obtained by the previous step, and then carrying out high-temperature in-situ heat treatment in an inert gas atmosphere to obtain the zinc antimonide-based thermoelectric film. The preparation method has simple processes, good repeatability and a high raw material utilization rate, prevents a loss of Zn in high-temperature annealing, realizes high-precision control and controllable doping on elements of the zinc antimonide-based thermoelectric film, effectively optimizes a film structure and improves film thermoelectric properties.

Description

technical field [0001] The invention relates to the field of thermoelectric functional materials, in particular to a low-cost, high-performance zinc antimonide-based thermoelectric thin film and a preparation method thereof. Background technique [0002] With the development of science and technology and the improvement of people's living standards, energy consumption is also increasing rapidly. With the use of traditional energy, the environmental pollution problem is becoming more and more serious. The use of renewable energy and the recovery of industrial waste heat and waste heat are extremely important for energy saving and environmental protection. Significance, the development of green new energy technology has been widely concerned and valued by countries all over the world. [0003] As a new energy material, thermoelectric material can directly convert heat energy and electric energy into each other without the operation of mechanical parts and media, and does not r...

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Application Information

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IPC IPC(8): C23C14/46C23C14/58C23C14/14
Inventor 范平郑壮豪梁广兴张东平罗景庭
Owner SHENZHEN UNIV
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