Strain thin film for thin film pressure sensor, preparation method of strain thin film, thin film pressure sensor core
A thin-film pressure and strain thin-film technology, applied in the field of sensors, can solve the problems of changing the resistance value of the strain resistance of the sensor, reducing the reliability of measuring strain, and limiting the sensitivity of the sensor, etc., so as to reduce the temperature coefficient of resistance, high sensitivity coefficient and resistivity, and low Effect of Temperature Coefficient
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Embodiment 1
[0025] A strained thin film used for a thin film pressure sensor according to the present invention is a tantalum nitride thin film.
[0026] In this embodiment, the composition of the tantalum nitride film is TaN 0.56 .
[0027] In this embodiment, the thickness of the tantalum nitride thin film is 350nm.
[0028] Different forms of tantalum nitride have different properties. The experimental results show that the closer the composition of tantalum nitride film is to Ta 2 N, the more in line with the requirements of the strained film used in the film pressure sensor. The tantalum nitride thin film of this embodiment has a gauge factor of 3.5, a sheet resistance of 12Ω / □, and a temperature coefficient of resistance of -40ppm when the film thickness is 350nm. These characteristics are the key to the preparation of a high-sensitivity, harsh-environment resistant thin-film pressure sensor parameter.
[0029] A method for preparing a strained thin film for a thin film pressure...
Embodiment 2
[0039] A thin-film pressure sensor core body of the present invention comprises an elastic substrate, on which a thin-film functional layer is provided, and the thin-film functional layer comprises a buffer layer, an insulating layer and nitrogen formed from strained materials for the thin-film pressure sensor of embodiment 1. The tantalum oxide thin film resistance layer, the buffer layer, the insulating layer and the tantalum nitride thin film resistance layer are sequentially arranged on the elastic base.
[0040] In this embodiment, the buffer layer is a tantalum oxide film with a thickness of 0.5 μm.
[0041] In this embodiment, the insulating layer is a silicon dioxide film with a thickness of 3 μm.
[0042] A method for preparing the thin film pressure sensor core of the present embodiment, comprising the following steps:
[0043] (1) A stainless steel elastic substrate is selected as the elastic substrate in this embodiment, and the planarization treatment of the stai...
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