Method for obtaining single-crystal boron nitride film by ion beam sputtering deposition

An ion beam sputtering, boron nitride technology, applied in chemical instruments and methods, single crystal growth, single crystal growth and other directions, can solve the problems of affecting film performance, unfavorable large-scale production, complex and unclear growth mechanism, etc. Controllable number of layers, improved high-cost and highly toxic effects

Inactive Publication Date: 2020-05-12
LANZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Now chemical vapor deposition (CVD) technology is commonly used to prepare h-BN two-dimensional atomic crystals, but due to the variety of precursors, the growth mechanism is complicated and unknown, and there are a large number of defects in the product, which seriously affects the performance of the film, and...

Method used

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  • Method for obtaining single-crystal boron nitride film by ion beam sputtering deposition
  • Method for obtaining single-crystal boron nitride film by ion beam sputtering deposition
  • Method for obtaining single-crystal boron nitride film by ion beam sputtering deposition

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Effect test

Embodiment 1

[0030] a. Use acetone, ethanol and deionized water to ultrasonically clean the c-plane sapphire substrate for 10 minutes in sequence, rinse with deionized water after each cleaning, and finally dry in an incubator;

[0031] b. immerse the cleaned sapphire substrate in a hydrofluoric acid solution (10% by mass fraction) for 30s, rinse with deionized water, and put the substrate into a vacuum oven to dry;

[0032] c. Place a high-purity Ni target (purity of 99.99%) on the target position of a DC magnetron sputtering instrument, and epitaxially grow it on a sapphire substrate heated to 600°C with a constant power of 50W in an argon atmosphere for 2.5 μm thick Ni(111) oriented film;

[0033] d. Fix the sputtered Ni / sapphire substrate on the sample holder and place it in the growth chamber, vacuum the chamber to 3.75×10-3mTor, and inject 50sccm hydrogen gas into the reaction chamber to raise the pressure to 30mTor , increase the heating current to raise the substrate temperature t...

Embodiment 2

[0038] a. Use acetone, ethanol and deionized water to ultrasonically clean the c-plane sapphire substrate for 10 minutes in sequence, rinse with deionized water after each cleaning, and finally dry in an incubator;

[0039] b. immerse the cleaned sapphire substrate in a hydrofluoric acid solution (10% by mass fraction) for 30s, rinse with deionized water, and put the substrate into a vacuum oven to dry;

[0040] c. Place a high-purity Ni target (purity of 99.99%) on the target position of a DC magnetron sputtering instrument, and epitaxially grow 2.5 μm on a sapphire substrate heated to 600 °C with a constant power of 60 W in an argon atmosphere Thick Ni(111) oriented films;

[0041] d. Fix the sputtered Ni / sapphire substrate on the sample holder and put it into the growth chamber, vacuum the chamber to 3.75×10-3mTor, and feed 50sccm hydrogen gas into the reaction chamber to raise the pressure to 40mTor, Increase the heating current to raise the substrate temperature to 1050°...

Embodiment 3

[0046] a. Use acetone, ethanol and deionized water to ultrasonically clean the c-plane sapphire substrate for 10 minutes in sequence, rinse with deionized water after each cleaning, and finally dry in an incubator;

[0047] b. Immerse the cleaned c-plane sapphire substrate in a hydrofluoric acid solution (10% by mass) for 30 seconds, rinse with deionized water, and put the substrate into a vacuum drying oven to dry;

[0048] c. Place a high-purity Ni target (purity of 99.99%) on the target position of a DC magnetron sputtering apparatus, and epitaxially grow it on a sapphire substrate heated to 600 °C with a constant power of 70 W in an argon atmosphere for 2.5 μm thick Ni(111) oriented film;

[0049] d. Fix the sputtered Ni / sapphire substrate on the sample holder and put it into the growth chamber, vacuum the chamber to 3.75×10-3mTor, and inject 50sccm hydrogen gas into the reaction chamber to raise the pressure to 50mTor , increase the heating current to raise the substrate...

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Abstract

The invention relates to the field of researches on two-dimensional layered materials, in particular to a method for obtaining a single-crystal boron nitride film through ion beam sputtering deposition. The method comprises the following steps: ultrasonically cleaning a single crystal substrate by using acetone, ethanol and deionized water in sequence; immersing the cleaned single crystal substrate into a hydrofluoric acid solution for treatment; placing a high-purity Ni target on a target position of a direct-current magnetron sputtering instrument, and epitaxially growing a Ni (111) orientedfilm on the single crystal substrate; fixing a nickel/single crystal substrate on a sample support, putting the sample support into a growth chamber of ion beam sputtering deposition equipment, and carrying out film growth through hydrogen and argon treatment; and cooling the grown film to obtain the large-size single-crystal boron nitride film.

Description

technical field [0001] The invention relates to the research field of two-dimensional layered materials, and is mainly used in the fields of insulation, heat conduction, deep ultraviolet luminescence, grid dielectric layer, microwave shielding, etc., and specifically relates to a method for obtaining a single crystal boron nitride thin film by ion beam sputtering deposition . Background technique [0002] As an important material in the field of two-dimensional materials, hexagonal boron nitride (h-BN) thin film has extremely high in-plane elastic modulus, atomically smooth surface, wide bandgap (5.9eV), insulation Good, high temperature stability, chemical stability and high thermal conductivity, it is expected to be widely used in insulating substrates, deep ultraviolet luminescence, dielectric materials, microwave shielding and other fields. Now chemical vapor deposition (CVD) technology is commonly used to prepare h-BN two-dimensional atomic crystals, but due to the var...

Claims

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Application Information

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IPC IPC(8): C30B29/40C30B23/02C30B33/02
CPCC30B23/025C30B29/403C30B33/02
Inventor 兰伟马凌霄董晨浩张兴旺
Owner LANZHOU UNIVERSITY
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