Ion beam process for deposition of highly abrasion-resistant coatings

a coating and ion beam technology, applied in the field of coating deposition, can solve the problems of subject to abrasion, and poor abrasion resistance of coating lenses, and achieve the effect of low friction coefficient and high hardness

Inactive Publication Date: 2001-07-24
MORGAN ADVANCED CERAMICS
View PDF41 Cites 41 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

Additionally, diamond-like carbon coatings can be made by the process of the present invention. The term "diamond-like carbon" is meant to include amorphous materials composed of carbon and hydrogen, whose properties resemble, but do not duplicate, those of diamond. Some of these properties are high hardness (HV=about 1,000 to about 5,000 kg/mm.sup.2), low friction coefficient (approximately 0.1), transparency across the

Problems solved by technology

This is particularly true for the case of polycarbonate which is very subject to abrasion.
However, improved abrasion resistance of coated lenses is still a major problem in the ophthalmic lens industry.
Current commercial plastic lenses have abrasion resistance characteristics which are poor compared to glass.
The performance of these plasma polymers is often only marginally better than that of the polysiloxane and acrylic spin and dip coatings, and the performance of these coatings does not approach the performance of glass.
These films are often quite soft and are not useable as protective coatings except on extremely soft substrates.
These plasma systems are not readily scaled to a throughput required for mass production nor are they easily operated in a reproducible, controlled fashion in a production environment.
The RF plasma process also suffers in that the deposition process, and the properties of the resultant coating are dependent on whether the substrate to be coated is an electrical conductor or insulator.
This reduces the flexibility of the process for use in production.
Additionally, systems with large area electrodes are not widely available.
For example, there are no readily available commercial parallel plate RF deposition systems having large electrodes, i.e. at least one meter in diameter.
(1) difficulty in pre-cleaning of substrates prior to deposition;
(2) adhesion of the protective, abrasion-resistant coating;
(3) permeation of the coatings by water vapor and oxygen;
(4) fabrication of coherent, dense coatings;
(5) control of coating properties during a deposition run and batch-to-batch variation of coating characteristics;
(6) coating thickness control and reproducibility of thickness;
(7) part-to-part and batch-to-batch control of coating uniformity;
(8) difficulty in coating substrates of complex geometry or configuration; and
(9) production readiness and ability to scale-up the deposition process for mass production.
The first problem encountered by both methods is the difficulty in pre-cleaning the substrates prior to deposition of the adhesion layer or abrasion-resistant film.
This pre-cleaning technique suffers from low cleaning rate, and re-contamination of the substrate by sputtered contaminants which are deposited back onto the substrate.
This atom packing density is maximized by a high degree of ion bombardment during film growth, which is not easily attainable or optimized by the plasma polymerization methods of the prior art.
Regarding the control of t

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ion beam process for deposition of highly abrasion-resistant coatings
  • Ion beam process for deposition of highly abrasion-resistant coatings

Examples

Experimental program
Comparison scheme
Effect test

example a

A three inch diameter Si(001) wafer and a 1".times.1" piece of fused silica were cleaned in isopropyl alcohol, dried with nitrogen gas and mounted onto a graphite disk using Kapton tape. The graphite plate was mounted into a stainless steel vacuum chamber pumped by a 10" diffusion pump and the chamber was evacuated to a pressure of 9.2.times.10.sup.-6 Torr. The substrates were sputter-etched for one minute by an argon ion beam generated from an End Hall ion source (manufactured by Commonwealth Scientific as Mark II) operated on 5 sccm of argon, at an anode potential of 171 volts, and an anode current of 1.08 amps. The Ar gas was introduced directly into the plasma chamber of the ion source. The pressure in the chamber was 7.4.times.10.sup.-5 Torr. A hot filament was used as the electron source. After sputter-etching methane gas was introduced directly into the plasma chamber of the ion source at a flow of 10 sccm resulting in a pressure of 6.6.times.10.sup.-5 Torr. The anode voltage...

example b

A three inch diameter Si(001) wafer and a 1".times.1" piece of fused silica were cleaned in isopropyl alcohol, dried with nitrogen gas and mounted onto a graphite disk using Kapton tape. The graphite plate was mounted into a stainless steel vacuum chamber pumped by a 10" diffusion pump and the chamber was evacuated to a pressure of 2.3.times.10.sup.-6 Torr. The substrates were sputter-etched for two minutes by an argon ion beam generated from the End Hall ion source (Commonwealth Scientific's Mark II) operated on 5 sccm of argon, at an anode potential of 170 volts and an anode current of 1.25 amps. The argon gas was introduced directly into the plasma chamber of the ion source. The pressure in the chamber was 4.8.times.10.sup.-5 Torr. A hot filament was used as the electron source. After sputter-etching, the argon was shut off and cyclohexane gas was introduced directly into the plasma chamber of the ion source resulting in a chamber pressure of 1.4.times.10.sup.-4 Torr. The anode v...

example c

A three inch diameter Si(001) wafer and a 1".times.1" piece of fused silica were cleaned in isopropyl alcohol, dried with nitrogen gas and mounted onto a graphite disk using Kapton tape. The graphite plate was mounted into a stainless steel vacuum chamber pumped by a 10" diffusion pump and the chamber was evacuated to a pressure of 2.5.times.10.sup.-6 Torr. The substrates were sputter-etched for two minutes by an argon ion beam generated from the End Hall ion source (Commonwealth Scientific's Mark II) operated on 6.4 sccm of argon, at an anode potential of 160 volts and an anode current of 0.98 amp. The Ar gas was introduced directly into the plasma chamber of the ion source. The pressure in the chamber was 2.1.times.10.sup.-4 Torr. A hot filament was used as the electron source. After the sputter-etching was complete, tetramethylcyclotetrasiloxane was introduced into the plasma chamber of the ion source and the argon was turned off resulting in a chamber pressure of 6.7.times.10.su...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Fractionaaaaaaaaaa
Thicknessaaaaaaaaaa
Pressureaaaaaaaaaa
Login to view more

Abstract

An ion beam deposition method is provided for manufacturing a coated substrate with improved abrasion resistance, and improved lifetime. According to the method, the substrate is first chemically cleaned to remove contaminants. In the second step, the substrate is inserted into a vacuum chamber, and the air in said chamber is evacuated. In the third step, the substrate surface is bombarded with energetic ions to assist in the removal of residual hydrocarbons and surface oxides, and to activate the surface. <DEL-S DATE="20010724" ID="DEL-S-00001">Alter<DEL-E ID="DEL-S-00001"> <INS-S DATE="20010724" ID="INS-S-00001">After <INS-E ID="INS-S-00001">the substrate surface has been sputter-etched, a protective, abrasion-resistant coating is deposited by ion beam deposition. The ion beam-deposited coating may contain one or more layers. Once the chosen thickness of the coating has been achieved, the deposition process on the substrates is terminated, the vacuum chamber pressure is increased to atmospheric pressure, and the coated substrate products having improved abrasion-resistance are removed from the vacuum chamber. The coated products of this invention have utility as plastic sunglass lenses, ophthalmic lenses, bar codes scanner windows, and industrial wear parts that must be protected from scratches and abrasion.

Description

FIELD OF THE INVENTIONThis invention relates generally to a process for depositing coatings which protect a substrate from wear and abrasion. More particularly, the invention relates to a process for protecting such substrates as plastic sunglass lenses, ophthalmic lenses, bar codes scanner windows, and industrial wear parts from scratches and abrasion.BACKGROUND OF THE INVENTIONThere are numerous prior art methods for coating substrates to improve their performance, e.g. lifetime, abrasion wear resistance and similar properties. For example, consider the case of plastic sunglass lenses or plastic prescription eyewear. Due to the ease of scratching plastic, abrasion-resistant coatings are deposited onto the surface of plastic lenses. These hard outer coatings increase the useful life of the lenses. To make such coatings marketable, the process for depositing these hard coatings must be inexpensive, reliable and reproducible.Plastic lenses sold into the ophthalmic lens market are lar...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C16/02B32B7/02B32B9/00C23C14/32C23C16/30C23C16/32B05D3/04C23C16/34C23C16/513C23F4/00
CPCC23C16/0245C23C16/30C23C16/308C23C16/325C23C16/345C23C16/513
Inventor KNAPP, BRADLEY J.KIMOCK, FRED M.PETRMICHL, RUDOLPH H.GALVIN, NORMAN D.
Owner MORGAN ADVANCED CERAMICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products