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Method for producing solenoid micro-inductance device based on amorphous FeCuNbCrSiB magnetic film

A technology of magnetic film and manufacturing method, which is applied in the field of microelectronics to achieve the effects of high inductance, good repeatability and high operating frequency

Inactive Publication Date: 2006-08-02
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But so far there is no report on the application of FeCuNbCrSiB film to the fabrication of micro-inductance devices

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] (1) Sputter the bottom layer of Cr / Cu on one side of the cleaned glass substrate with a thickness of 100nm, cast the positive resist AZ4000 series, the thickness of the photoresist is 5μm, the drying temperature of the photoresist is 95°C, and the time is 30 minutes; After exposing and developing one side of the substrate, use Ar plasma etching process to etch the Cr / Cu bottom layer; remove the photoresist, sputter aluminum oxide film with a thickness of 1 μm, and obtain double-sided overlay alignment symbols ;

[0023] (2) Depositing a Cr / Cu bottom layer on the other side of the substrate with a thickness of 100 nm. The following processes are carried out on this surface;

[0024] (3) Throwing the positive resist, the thickness of the photoresist is 5 μm, the drying temperature of the photoresist is 95 ° C, and the time is 30 minutes; the double-sided overlay is exposed and developed to obtain the bottom coil pattern; then the copper bottom coil is electroplated, the ...

Embodiment 2

[0037] (1) Sputter the bottom layer of Cr / Cu on one side of the cleaned glass substrate with a thickness of 100nm, cast the positive resist AZ4000 series, the thickness of the photoresist is 5μm, the drying temperature of the photoresist is 95°C, and the time is 30 minutes; After exposing and developing one side of the substrate, use Ar plasma etching process to etch the Cr / Cu bottom layer; remove the photoresist, sputter aluminum oxide film with a thickness of 1 μm, and obtain double-sided overlay alignment symbols ;

[0038] (2) Depositing a Cr / Cu bottom layer on the other side of the substrate with a thickness of 100 nm. The following processes are carried out on this surface;

[0039] (3) Throwing the positive resist, the thickness of the photoresist is 10 μm, the drying temperature of the photoresist is 92 ° C, and the time is 45 minutes; the double-sided overlay is exposed and developed to obtain the bottom coil pattern; then the copper bottom coil is electroplated, the...

Embodiment 3

[0052] (1) Sputter the bottom layer of Cr / Cu on one side of the cleaned glass substrate with a thickness of 100nm, cast the positive resist AZ4000 series, the thickness of the photoresist is 5μm, the drying temperature of the photoresist is 95°C, and the time is 30 minutes; After exposing and developing one side of the substrate, use Ar plasma etching process to etch the Cr / Cu bottom layer; remove the photoresist, sputter aluminum oxide film with a thickness of 1 μm, and obtain double-sided overlay alignment symbols ;

[0053] (2) Depositing a Cr / Cu bottom layer on the other side of the substrate with a thickness of 100 nm. The following processes are carried out on this surface;

[0054](3) Throw away the positive resist, the thickness of the photoresist is 20 μm, the drying temperature of the photoresist is 90 ° C, and the time is 60 minutes; double-sided overlay exposure and development, to obtain the bottom coil pattern; then electroplate the copper bottom coil, the thick...

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PUM

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Abstract

The invention is a kind of producing method of solenoid micro-inductance device based on non-crystal FeCuNbCrSiB magnetic thin film in microelectronic technology field. The method is as follows: making double-side alignment symbol; sputtering substrate; spinning photoresist, exposing, developing; electroplating ground loop and connecting conductor; removing photoresist and substrate; sputtering aluminium oxide thin film and polishing aluminium oxide thin film; sputtering FeCuNbCrSiB magnetic thin film and etching FeCuNbCrSiB magnetic thin film; sputtering substrate; spinning photoresist, exposing, developing; electroplating connecting conductor; removing photoresist and substrate; sputtering aluminium oxide thin film and polishing aluminium oxide thin film; sputtering substrate; spinning photoresist, exposing, developing; electroplating topping coil and pin; removing photoresist and substrate; sputtering aluminium oxide thin film and polishing aluminium oxide thin film; magnetic field annealing.

Description

technical field [0001] The invention relates to a method for manufacturing a device in the field of microelectronic technology, in particular to a method for manufacturing a solenoid micro-inductance device based on an amorphous FeCuNbCrSiB magnetic thin film. Background technique [0002] In recent years, with the rapid development of micro-electro-mechanical systems (MEMS) technology, especially the quasi-LIGA processing technology based on three-dimensional non-silicon materials has become the current international research and development of miniaturized multi-layer structure micro devices and radio-frequency-MEMS ( A state-of-the-art technology for RF-MEMS) devices. In the world, the use of MEMS technology to develop three-dimensional structure magnetic thin film micro-inductance devices came into being. On the other hand, due to the new progress of amorphous and nanocrystalline soft magnetic materials, the use of amorphous and nanocrystalline soft magnetic materials a...

Claims

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Application Information

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IPC IPC(8): H01F41/14H01F41/18C23C14/34B81C1/00
Inventor 周勇丁文
Owner SHANGHAI JIAO TONG UNIV
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