To provide a CMP apparatus and a
polishing method that can easily improve the accuracy of measuring the thickness of a
polishing layer among a plurality of
layers stacked on the surface of a
wafer.SOLUTION: There is provided a CMP apparatus 1 for
polishing a polishing layer W1 of a
wafer W comprising the polishing layer W1 and at least one underlayer W2 located below the polishing layer. The CMP apparatus comprises: a
database 30 including respective model waveforms of reflected light spectra for respective thicknesses of the polishing layer corresponding to respective thicknesses of the underlayer; a detection unit 120 for determining the thickness of the polishing layer on the basis of the
database and a first reflected
light spectrum detected during polishing of the
wafer; and an
arithmetic processing unit 130 for generating the
database on the basis of information on materials of the polishing layer, information on materials of the underlayer, a first thickness range of the polishing layer, a second thickness range of the underlayer, and thickness intervals of the polishing layer and the underlayer.SELECTED DRAWING: Figure 1