Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Zinc oxide piezoelectric film for SAW (Surface Acoustic Wave) device and manufacturing method thereof

A technology of surface acoustic wave devices and piezoelectric films, applied in the direction of electrical components, impedance networks, etc., can solve problems affecting device performance, processing difficulties, surface acoustic wave scattering, etc., achieve simple and easy preparation process, and improve electromechanical coupling coefficient , The effect of high c-axis orientation

Inactive Publication Date: 2012-07-25
TIANJIN UNIVERSITY OF TECHNOLOGY
View PDF2 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the rough surface of the usually prepared diamond film, it is not conducive to the preparation of the interdigital transducer, which will cause the scattering of the surface acoustic wave, generate energy loss, increase the insertion loss, and seriously affect the performance of the device.
And the diamond has high hardness and stable chemical properties, so it is very difficult to deal with it by means of mechanical and chemical polishing
Greatly limit the application of diamond devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Zinc oxide piezoelectric film for SAW (Surface Acoustic Wave) device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] A preparation method for a zinc oxide piezoelectric thin film for a surface acoustic wave device, the steps are as follows:

[0025] 1) Put the monocrystalline silicon substrate Si(100) into acetone or alcohol, and use an ultrasonic cleaning machine to perform ultrasonic cleaning for 15 minutes, and dry it with cold air;

[0026] 2) Put the cleaned single crystal silicon substrate on the substrate table in the vacuum growth chamber of the excimer pulsed laser system with a wavelength of 250nm, and use a mechanical pump and a molecular pump to evacuate the vacuum growth chamber to the background vacuum degrees equal to 3×10 -4 Pa;

[0027] 3) With graphite as the target material, the working gas argon gas is introduced into the vacuum chamber, the pressure of the argon gas is 15Pa, the distance between the graphite target material and the single crystal silicon substrate is adjusted to 70mm, and the temperature of the single crystal silicon substrate is 400°C. The auto...

Embodiment 2

[0034] A preparation method for a zinc oxide piezoelectric thin film for a surface acoustic wave device, the steps are as follows:

[0035] 1) Put the monocrystalline silicon substrate Si(100) into acetone or alcohol, and use an ultrasonic cleaning machine to perform ultrasonic cleaning for 15 minutes, and dry it with cold air;

[0036]2) Put the cleaned single crystal silicon substrate on the substrate table in the vacuum growth chamber of the excimer pulsed laser system with a wavelength of 250nm, and use a mechanical pump and a molecular pump to evacuate the vacuum growth chamber to the background vacuum degrees equal to 3×10 -4 Pa;

[0037] 3) With graphite as the target material, the working gas argon gas is passed into the vacuum chamber, the pressure of the argon gas is 25Pa, the distance between the graphite target material and the single crystal silicon substrate is adjusted to 65mm, and the temperature of the single crystal silicon substrate is 400°C. The autopropa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Linearityaaaaaaaaaa
Film thicknessaaaaaaaaaa
Film thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a zinc oxide piezoelectric film for an SAW (Surface Acoustic Wave) device, which is of a zinc oxide / aluminum / diamond-like composite film structure. A manufacturing method comprises the following steps of: placing single crystal silicon wafer with the cleaned surface into a vacuum growth cavity of a pulse laser system, depositing the diamond-like / aluminum thin film with graphite and aluminum as a target material; and depositing a zinc oxide film on the surface of the Al film with the zinc oxide as the target material through a radio-frequency magnetron sputtering process. The invention has the advantages that: the manufacturing method is simple and feasible and has low cost; the prepared diamond-like film surface is smooth and flat so as to be capable of largely reducing sound wave loss in a transmission process, the deposited Al film largely improves the electromechanical coupling coefficients of the zinc oxide film, the crystallization degree of the zinc oxide film is high, c-axis orientation is high, and the zinc oxide / aluminum / diamond-like composite film structure can be used for manufacturing high-performance, high-frequency and high power devices.

Description

technical field [0001] The invention relates to the technical field of surface acoustic wave devices, in particular to a zinc oxide piezoelectric thin film used for surface acoustic wave devices and a preparation method thereof. Background technique [0002] In recent years, the rapid development of mobile communication has made radio communication frequency band a limited and precious natural resource. For mobile communication systems, the frequency band below 1GHz has been fully occupied (the first generation digital system); the frequency of the second generation digital system is from 900MHz to 1.9GHz; in the third generation digital system, the global roaming frequency range is 1.8~ 2.2GHz, the satellite positioning system (GPS) frequency is 1.575GHz, and the application frequency range of low earth orbit new satellite communication (LEO) is 1.6GHz~2.5GHz. Therefore, the application frequency of the current mobile communication system is getting higher and higher, and u...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03H3/08H03H9/25H03H9/02
Inventor 陈希明张倩阴聚乾朱宇清李福龙郭燕孙连婕
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com