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New CuI Crystal and growing method thereof

A new type of crystal technology, applied in the field of CuI crystal growth, achieves the effect of simple equipment, low growth temperature and low price

Inactive Publication Date: 2005-04-27
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, there have been no reports on the use of concentration control technology in the growth of CuI crystals by the complexation-decomplexation method at home and abroad.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0014] Analytical pure sodium silicate, ionized water, and acetic acid were selected as raw materials for preparing the gel, analytically pure hydroiodic acid was used as a complexing agent, and CuI powder was used as a raw material to grow CuI crystals. Dissolve 106 grams of sodium silicate in 250 grams of deionized water, and filter after completely dissolving. Further dilute the above sodium silicate aqueous solution with deionized water, and add 2M acetic acid, the volume ratio of sodium silicate aqueous solution, deionized water, and acetic acid is 7:8:15 (such as 70ml sodium silicate, 80ml deionized water, 150ml acetic acid), stirring constantly during the solution preparation process. The prepared solution was poured into a U-shaped tube with a diameter of 3 cm, a height of 25 cm, and a width of 20 cm. After standing at a temperature of 25±0.5° C. for 48 hours, a gel for crystal growth was formed.

[0015] Dissolve CuI powder in different amounts of 7M hydriodic acid t...

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Abstract

The present invention discloses one kind of CuI crystal and its growth method, and the CuI crystal is in regular gamma phase tetrahedron structure of size greater than 2 mm. The crystal growth process adopts concentration controlling technology, combines complexing and de-complexing, and has the advantages of simple equipment, low cost, low growth temperature, easy-to-control growth process, etc. The grown CuI crystal has high gamma phase purity, less stress, less faults, good appearance and relatively large size. As one new generation of very fast scintillator, the present invention may find its important application in high speed X-ray counting, gamma ray, electronic beam measurement, etc. and may be also used as fast ion conductor.

Description

technical field [0001] The invention relates to a crystal growth method, in particular to a CuI crystal growth method. Background technique [0002] With the rapid development of high-energy physics, nuclear physics and nuclear technology applications, ordinary inorganic scintillation crystals will be difficult to meet the needs of ultra-high count rate measurement. Therefore, in recent years, countries are actively conducting research on new ultra-fast scintillator. Copper iodide (CuI) crystal, a wide bandgap semiconductor material, has extremely fast scintillation characteristics at room temperature, and its luminescence decay time is only 90ps, and there is no slow component. It is the fastest inorganic scintillation crystal known so far. As a new generation of ultra-fast scintillator, it has important application value in ultra-high count rate X-ray, γ-ray and electron beam measurement. The light yield of CuI crystal is BaF 2 A quarter of the luminous intensity of the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B5/00C30B29/12
Inventor 顾牡张睿汪大祥刘小林
Owner TONGJI UNIV
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