Ultra-low dielectric constant material film and preparation method thereof

Abstract

The invention belongs to the technical field of super-large-scale integrated circuit manufacturing, and in particular relates to an ultra-low dielectric constant material film and a preparation method thereof. The preparation method comprises the following steps of: first, taking a single annular 2,4,6,8-tetravinyl-2, 4, 6, 8-tetravinylcyclotetrasiloxane as a precursor; then, forming a precursor film on a silicon substrate by a spin-coating method; next, irradiating the obtained film by using ultraviolet light; later on, performing polyreaction among precursor monomers to form an ultra-low dielectric constant SiOCH film; and finally, performing thermal annealing treatment on the film to further improve the electrical characteristics of the SiOCH film. In the SiOCH film obtained by adopting the method, the dielectric constant can reach 1.94 and the breakdown electric field intensity is greater than 3 MV / cm; and under the external electric field of 1 MV / cm, the film has the leakage current density magnitude order of 10<-7>A / cm2, the young's modulus of greater than 2 GPa, and the hardness of 0.2 GPa.

Description

technical field [0001] The invention belongs to the technical field of semiconductor VLSI manufacturing, and in particular relates to a low dielectric constant material thin film and a preparation method thereof. Background technique [0002] With the expansion of the scale of semiconductor integrated circuits, the feature size is continuously reduced, and the resistance of the metal lines inside the integrated circuit and the capacitance between the metal lines are increasing, which will lead to serious degradation of interconnection performance, such as RC (R refers to resistance , C refers to capacitance) delay, crosstalk, power consumption, etc. Replacing aluminum with copper as a new generation of metal wires reduces the resistance of integrated circuits by about 40%. The remaining important task to improve the performance of integrated circuits is how to reduce parasitic capacitance as much as possible. Among them, replace SiO with low dielectric constant (low-k) mate...

AI Technical Summary

Problems solved by technology

Therefore, most ring precursors are not suitable for this process

The present invention proposes a new low-k thin film preparation process, which avoids the condensation reaction of precursor molecules by high temperature treatment, thus solving the problem of thermal volatilization of precursors

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